公开(公告)号：US20190287791A1

公开(公告)日：2019-09-19

申请号：US15924821

申请日：2018-03-19

Applicant: APPLIED MATERIALS, INC.

Inventor： BEN-LI SHEU ,  BENCHERKI MEBARKI ,  JOUNG JOO LEE ,  ISMAIL EMESH ,  ROEY SHAVIV ,  XIANMIN TANG

IPC: H01L21/027 ,  H01L21/768 ,  C23C16/455 ,  H01L21/285 ,  H01L21/02

Abstract: Methods and apparatus for asymmetric deposition of a material on a structure formed on a substrate are provided herein. In some embodiments, a method for asymmetric deposition of a material includes forming a plasma from a process gas comprising ionized fluorocarbon (CxFy) particles, depositing an asymmetric fluorocarbon (CxFy) polymer coating on a first sidewall and a bottom portion of an opening formed in a first dielectric layer using angled CxFy ions, depositing a metal, metallic nitride, or metallic oxide on a second sidewall of the opening, and removing the CxFy polymer coating from the first sidewall and the bottom portion of the opening to leave an asymmetric deposition of the metal, metallic nitride, or metallic oxide on the structure.

公开(公告)号：US20200251340A1

公开(公告)日：2020-08-06

申请号：US16775752

申请日：2020-01-29

Applicant: APPLIED MATERIALS, INC.

Inventor： ROEY SHAVIV ,  AVGERINOS V. GELATOS ,  ISMAIL EMESH ,  XIKUN WANG ,  YU LEI

IPC: H01L21/285 ,  H01L21/768 ,  H01L21/3213 ,  H01L21/02

Abstract: Methods and apparatus for filling a feature disposed in a substrate, including: depositing a first metal within the feature to a first predetermined thickness in a first process chamber; etching the first metal to remove a first portion of the metal at a top of the feature in a second process chamber different than the first process chamber to form an exposed surface of the first metal, and selectively depositing a second metal atop the exposed surface of the first metal within the feature to a second predetermined thickness in a third process chamber; wherein etching the first metal and selectively depositing a second metal are performed without oxygen contacting the top surface.

公开(公告)号：US20200219720A1

公开(公告)日：2020-07-09

申请号：US16812593

申请日：2020-03-09

Applicant: APPLIED MATERIALS, INC.

Inventor： BEN-LI SHEU ,  BENCHERKI MEBARKI ,  JOUNG JOO LEE ,  ISMAIL EMESH ,  ROEY SHAVIV ,  XIANMIN TANG

IPC: H01L21/027 ,  H01L21/768 ,  H01L21/02 ,  H01L21/285 ,  C23C16/455

Abstract: Methods and apparatus for asymmetric deposition of a material on a structure formed on a substrate are provided herein. In some embodiments, a method for asymmetric deposition of a material includes forming a plasma from a process gas comprising ionized fluorocarbon (CxFy) particles, depositing an asymmetric fluorocarbon (CxFy) polymer coating on a first sidewall and a bottom portion of an opening formed in a first dielectric layer using angled CxFy ions, depositing a metal, metallic nitride, or metallic oxide on a second sidewall of the opening, and removing the CxFy polymer coating from the first sidewall and the bottom portion of the opening to leave an asymmetric deposition of the metal, metallic nitride, or metallic oxide on the structure.

公开(公告)号：US20190198392A1

公开(公告)日：2019-06-27

申请号：US15853165

申请日：2017-12-22

Applicant: APPLIED MATERIALS, INC.

Inventor： AMRITA B. MULLICK ,  ISMAIL EMESH ,  UDAY MITRA ,  ROEY SHAVIV ,  REGINA FREED

IPC: H01L21/768 ,  H01L21/3205 ,  H01L21/3213 ,  C23F1/38 ,  C23F1/26

CPC classification number: H01L21/76883 ,  C23F1/26 ,  C23F1/38 ,  H01L21/32051 ,  H01L21/32134 ,  H01L21/7684

Abstract: Methods of etching tungsten are disclosed including: leveling a first top surface of a tungsten layer within a feature and atop a top surface of a substrate; and etching the tungsten layer with a peroxide such as hydrogen peroxide and one of a strong acid or a strong base to remove a first portion of the tungsten layer from atop the substrate to form a second top surface of a tungsten layer at a level below the top surface of the substrate. The methods are suitable for forming substantially level or flat top surfaces of a tungsten layer at a level below the top surface of the substrate or within one or more features such as vias or trenches.