公开(公告)号：US20210010160A1

公开(公告)日：2021-01-14

申请号：US17037165

申请日：2020-09-29

申请人： Applied Materials, Inc.

发明人： Christopher S. OLSEN ,  Theresa Kramer GUARINI ,  Jeffrey A. TOBIN ,  Lara HAWRYLCHAK ,  Peter STONE ,  Chi Wei LO ,  Saurabh CHOPRA

IPC分类号： C30B25/18 ,  C30B29/06 ,  C30B29/08

摘要： Embodiments of the present invention generally relate to methods for removing contaminants and native oxides from substrate surfaces. The methods generally include removing contaminants disposed on the substrate surface using a plasma process, and then cleaning the substrate surface by use of a remote plasma assisted dry etch process.

公开(公告)号：US20190382917A1

公开(公告)日：2019-12-19

申请号：US16550933

申请日：2019-08-26

申请人： Applied Materials, Inc.

发明人： Christopher S. OLSEN ,  Theresa K. GUARINI ,  Jeffrey TOBIN ,  Lara HAWRYLCHAK ,  Peter STONE ,  Chi Wei LO ,  Saurabh CHOPRA

IPC分类号： C30B25/18 ,  C30B29/08 ,  C30B29/06

摘要： Embodiments of the present invention generally relate to methods for removing contaminants and native oxides from substrate surfaces. The methods generally include removing contaminants disposed on the substrate surface using a plasma process, and then cleaning the substrate surface by use of a remote plasma assisted dry etch process.

公开(公告)号：US20170178894A1

公开(公告)日：2017-06-22

申请号：US15375683

申请日：2016-12-12

申请人： Applied Materials, Inc.

发明人： Peter STONE ,  Christopher S. OLSEN ,  Teng-fang KUO ,  Ping Han HSIEH ,  Zhenwen DING

IPC分类号： H01L21/02 ,  H01L21/322 ,  H01L21/3065

CPC分类号： H01L21/02057 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/3065 ,  H01L21/3221 ,  H01L21/6719 ,  H01L21/68742

摘要： Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises etching a surface of a silicon-containing substrate by use of a plasma etch process to form an etched surface of the silicon-containing substrate and forming an epitaxial layer on the etched surface of the silicon-containing substrate. The plasma etch process comprises flowing an etchant gas mixture comprising a fluorine-containing precursor and a hydrogen-containing precursor into a substrate-processing region of a first processing chamber and forming a plasma from the etchant gas mixture flowed into the substrate-processing region.

公开(公告)号：US20170084456A1

公开(公告)日：2017-03-23

申请号：US15259489

申请日：2016-09-08

申请人： Applied Materials, Inc.

发明人： Christopher S. OLSEN ,  Peter STONE ,  Teng-fang KUO ,  Ping Han HSIEH ,  Manoj VELLAIKAL

IPC分类号： H01L21/02 ,  H01L21/67 ,  H01L21/3065

CPC分类号： H01L21/02658 ,  H01J2237/334 ,  H01L21/02046 ,  H01L21/02049 ,  H01L21/02052 ,  H01L21/0206 ,  H01L21/02381 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/3065 ,  H01L21/67167 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/68742

摘要： Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises etching a surface of a silicon-containing substrate by use of a plasma etch process, where at least one etching process gas comprising chlorine gas and an inert gas is used during the plasma etch process and forming an epitaxial layer on the surface of the silicon-containing substrate.

公开(公告)号：US20190172712A1

公开(公告)日：2019-06-06

申请号：US16266485

申请日：2019-02-04

申请人： Applied Materials, Inc.

发明人： Christopher S. OLSEN ,  Peter STONE ,  Teng-fang KUO ,  Ping Han HSIEH ,  Manoj VELLAIKAL

IPC分类号： H01L21/02 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/687

摘要： Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises etching a surface of a silicon-containing substrate by use of a plasma etch process, where at least one etching process gas comprising chlorine gas and an inert gas is used during the plasma etch process and forming an epitaxial layer on the surface of the silicon-containing substrate.

公开(公告)号：US20180016705A1

公开(公告)日：2018-01-18

申请号：US15627149

申请日：2017-06-19

申请人： Applied Materials, Inc.

发明人： Christopher S. OLSEN ,  Theresa K. GUARINI ,  Jeffrey TOBIN ,  Lara HAWRYLCHAK ,  Peter STONE ,  Chi Wei LO ,  Saurabh CHOPRA

IPC分类号： C30B25/18 ,  C30B29/08 ,  C30B29/06

CPC分类号： C30B25/186 ,  C30B29/06 ,  C30B29/08

摘要： Embodiments of the present invention generally relate to methods for removing contaminants and native oxides from substrate surfaces. The methods generally include removing contaminants disposed on the substrate surface using a plasma process, and then cleaning the substrate surface by use of a remote plasma assisted dry etch process.

公开(公告)号：US20240301584A1

公开(公告)日：2024-09-12

申请号：US18667515

申请日：2024-05-17

申请人： Applied Materials, Inc.

发明人： Christopher S. OLSEN ,  Theresa K. GUARINI ,  Jeffrey TOBIN ,  Lara HAWRYLCHAK ,  Peter STONE ,  Chi Wei LO ,  Saurabh CHOPRA

IPC分类号： C30B25/18 ,  C30B29/06 ,  C30B29/08

CPC分类号： C30B25/186 ,  C30B29/06 ,  C30B29/08

摘要： A process for cleaning a substrate includes removing carbon containing contaminants from a native oxide layer on a surface of a substrate by performing a reducing process using a hydrogen containing plasma, and after removing carbon containing contaminants, removing the native oxide layer from the substrate by performing an etch process using a fluorine containing plasma.

公开(公告)号：US20180138038A1

公开(公告)日：2018-05-17

申请号：US15853397

申请日：2017-12-22

申请人： Applied Materials, Inc.

发明人： Christopher S. OLSEN ,  Peter STONE ,  Teng-fang KUO ,  Ping Han HSIEH ,  Manoj VELLAIKAL

IPC分类号： H01L21/02 ,  H01L21/687 ,  H01L21/67 ,  H01L21/3065

CPC分类号： H01L21/02658 ,  H01J2237/334 ,  H01L21/02046 ,  H01L21/02049 ,  H01L21/02052 ,  H01L21/0206 ,  H01L21/02381 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/3065 ,  H01L21/67167 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/68742

摘要： Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises etching a surface of a silicon-containing substrate by use of a plasma etch process, where at least one etching process gas comprising chlorine gas and an inert gas is used during the plasma etch process and forming an epitaxial layer on the surface of the silicon-containing substrate.