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    DEPTH-PROFILING OF SAMPLES BASED ON X-RAY MEASUREMENTS
    1.
    发明公开
    DEPTH-PROFILING OF SAMPLES BASED ON X-RAY MEASUREMENTS 审中-公开

    公开(公告)号：US20240085351A1

    公开(公告)日：2024-03-14

    申请号：US18231567

    申请日：2023-08-08

    Applicant: APPLIED MATERIALS ISRAEL LTD.

    Inventor： Doron Girmonsky ,  Michal Eilon ,  Dror Shemesh ,  Uri Hadar

    IPC: G01N23/083 ,  G06T7/00

    CPC classification number: G01N23/083 ,  G06T7/001 ,  G06T2207/10116 ,  G06T2207/20084

    Abstract: Disclosed herein is a system for non-destructive depth-profiling of samples. The system includes an electron beam source, a light sensor, and processing circuitry. The electron beam source configured to project e-beams on an inspected sample at each of a plurality of landing energies, which induce X-ray emitting interactions within each of a plurality of probed regions in the inspected sample, respectively, whose depth is determined by the landing energy. The light sensor is configured to measure the emitted X-ray light to obtain optical emission data sets pertaining to each of the probed regions, respectively. The processing circuitry is configured to determine a set of structural parameters, characterizing an internal geometry and/or a composition of the inspected sample, based on the measured optical emission data sets and taking into account reference data indicative of an intended design of the inspected sample.

    MEASURING HEIGHT DIFFERENCE IN PATTERNS ON SEMICONDUCTOR WAFERS
    2.
    发明申请
    MEASURING HEIGHT DIFFERENCE IN PATTERNS ON SEMICONDUCTOR WAFERS 审中-公开

    公开(公告)号：US20200380668A1

    公开(公告)日：2020-12-03

    申请号：US16995077

    申请日：2020-08-17

    Applicant: Applied Materials Israel Ltd.

    Inventor： Ishai Schwarzband ,  Yan Avniel ,  Sergey Khristo ,  Mor Baram ,  Shimon Levi ,  Doron Girmonsky ,  Roman Kris

    IPC: G06T7/00 ,  G06T7/60

    Abstract: An improved technique for determining height difference in patterns provided on semiconductor wafers uses real measurements (e.g., measurements from SEM images) and a height difference determination model. In one version of the model, a measurable variable of the model is expressed in terms of a function of a change in depth of shadow (i.e. relative brightness), wherein the depth of shadow depends on the height difference as well as width difference between two features on a semiconductor wafer. In another version of the model, the measurable variable is expressed in terms of a function of a change of a measured distance between two characteristic points on the real image of a periodic structure with respect to a change in a tilt angle of a scanning electron beam.

    Determination of defect location for examination of a specimen
    5.
    发明授权
    Determination of defect location for examination of a specimen 有权

    公开(公告)号：US11423529B2

    公开(公告)日：2022-08-23

    申请号：US16794172

    申请日：2020-02-18

    Applicant: Applied Materials Israel Ltd.

    Inventor： Doron Girmonsky ,  Rafael Ben Ami ,  Boaz Cohen ,  Dror Shemesh

    IPC: G06T7/00 ,  G06F17/18

    Abstract: There is provided a method and a system configured to obtain an image of a one or more first areas of a semiconductor specimen acquired by an examination tool, determine data Datt informative of defectivity in the one or more first areas, determine one or more second areas of the semiconductor specimen for which presence of a defect is suspected based at least on an evolution of Datt, or of data correlated to Datt, in the one or more first areas, and select the one or more second areas for inspection by the examination tool.

    Measuring height difference in patterns on semiconductor wafers
    6.
    发明授权
    Measuring height difference in patterns on semiconductor wafers 有权

    公开(公告)号：US11301983B2

    公开(公告)日：2022-04-12

    申请号：US16995077

    申请日：2020-08-17

    Applicant: Applied Materials Israel Ltd.

    Inventor： Ishai Schwarzband ,  Yan Avniel ,  Sergey Khristo ,  Mor Baram ,  Shimon Levi ,  Doron Girmonsky ,  Roman Kris

    IPC: G06K9/00 ,  G06T7/00 ,  G06T7/60

    Abstract: An improved technique for determining height difference in patterns provided on semiconductor wafers uses real measurements (e.g., measurements from SEM images) and a height difference determination model. In one version of the model, a measurable variable of the model is expressed in terms of a function of a change in depth of shadow (i.e. relative brightness), wherein the depth of shadow depends on the height difference as well as width difference between two features on a semiconductor wafer. In another version of the model, the measurable variable is expressed in terms of a function of a change of a measured distance between two characteristic points on the real image of a periodic structure with respect to a change in a tilt angle of a scanning electron beam.

    NON-DESTRUCTIVE CLASSIFICATION OF SPECIMENS BASED ON ENERGY SIGNATURE MEASUREMENTS
    8.
    发明公开
    NON-DESTRUCTIVE CLASSIFICATION OF SPECIMENS BASED ON ENERGY SIGNATURE MEASUREMENTS 审中-公开

    公开(公告)号：US20240255449A1

    公开(公告)日：2024-08-01

    申请号：US18103238

    申请日：2023-01-30

    Applicant: APPLIED MATERIALS ISRAEL LTD.

    Inventor： Doron Girmonsky ,  Uri Hadar ,  Dror Shemesh ,  Michal Eilon

    IPC: G01N23/2252

    CPC classification number: G01N23/2252 ,  G01N2223/079 ,  G01N2223/507 ,  G01N2223/6116

    Abstract: Disclosed herein is a system for non-destructive classification of specimens. The system includes an e-beam source, an X-ray measurement module, and a computational module. The e-beam source is configured to project e-beams on a specimen at one or more e-beam landing energies, so as to penetrate the specimen and induce emission of X-rays. The X-ray measurement module is configured to measure the emitted X-rays. The computational module is configured to process the measurement data to obtain an energy signature of at least one target substance included in the specimen and classify the inspected specimen based on the obtained energy signature and one or more reference energy signatures pertaining to one or more reference specimens, respectively.

    Z-PROFILING OF WAFERS BASED ON X-RAY MEASUREMENTS
    9.
    发明公开
    Z-PROFILING OF WAFERS BASED ON X-RAY MEASUREMENTS 审中-公开

    公开(公告)号：US20240085356A1

    公开(公告)日：2024-03-14

    申请号：US17901705

    申请日：2022-09-01

    Applicant: APPLIED MATERIALS ISRAEL LTD.

    Inventor： Doron Girmonsky ,  Michal Eilon ,  Dror Shemesh ,  Uri Hadar

    IPC: G01N23/2252 ,  G06N3/08

    CPC classification number: G01N23/2252 ,  G06N3/08

    Abstract: A computer-based method for non-destructive z-profiling of samples. The method includes: a measurement operation and a data analysis operation. The measurement operation includes, for each of a plurality of landing energies: (i) projecting an electron beam on a sample at a respective landing energy, such that light-emitting interactions between electrons from the electron beam and the sample occur within a respective probed region of the sample, which is centered about a respective depth; and (ii) measuring the emitted light to obtain an optical emission data set of the sample. The data analysis operation includes obtaining from the measured optical emission data sets a concentration map quantifying a dependence of a concentration of a material, which the sample comprises, on at least the depth.

    Measuring height difference in patterns on semiconductor wafers
    10.
    发明授权
    Measuring height difference in patterns on semiconductor wafers 有权

    公开(公告)号：US10748272B2

    公开(公告)日：2020-08-18

    申请号：US15982918

    申请日：2018-05-17

    Applicant: Applied Materials Israel Ltd.

    Inventor： Ishai Schwarzband ,  Yan Avniel ,  Sergey Khristo ,  Mor Baram ,  Shimon Levi ,  Doron Girmonsky ,  Roman Kris

    IPC: G06K9/00 ,  G06T7/00 ,  G06T7/60

    Abstract: An improved technique for determining height difference in patterns provided on semiconductor wafers uses real measurements (e.g., measurements from SEM images) and a height difference determination model. In one version of the model, a measurable variable of the model is expressed in terms of a function of a change in depth of shadow (i.e. relative brightness), wherein the depth of shadow depends on the height difference as well as width difference between two features on a semiconductor wafer. In another version of the model, the measurable variable is expressed in terms of a function of a change of a measured distance between two characteristic points on the real image of a periodic structure with respect to a change in a tilt angle of a scanning electron beam.

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