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公开(公告)号：US09899185B1
公开(公告)日：2018-02-20
申请号：US15134329
申请日：2016-04-20
Applicant: APPLIED MATERIALS ISRAEL LTD.
Inventor： Dror Shemesh , Mor Baram
IPC: H01J37/244 , H01J37/28 , H01J37/26
CPC classification number: H01J37/261 , H01J37/244 , H01J37/28
Abstract: A system, computer readable medium and a method for material analysis, the method may include (i) receiving or generating (a) an estimated composition of a microscopic element; wherein the estimated composition is responsive to an energy spectrum of, at least, the microscopic element; wherein the energy spectrum is obtained by an energy dispersive X-ray (EDX) detector; additional information related to, at least, the microscopic element, wherein the additional information is not obtained by the energy dispersive X-ray detector; and (ii) resolving an ambiguity in the estimated composition in response to the additional information, wherein the ambiguity occurs when the energy spectrum comprises a predefined energy peak that is attributed to a predefined material of ambiguous EDX composition determination.
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Patent Agency Ranking
公开(公告)号：US20200380668A1
公开(公告)日：2020-12-03
申请号：US16995077
申请日：2020-08-17
Applicant: Applied Materials Israel Ltd.
Inventor： Ishai Schwarzband , Yan Avniel , Sergey Khristo , Mor Baram , Shimon Levi , Doron Girmonsky , Roman Kris
Abstract: An improved technique for determining height difference in patterns provided on semiconductor wafers uses real measurements (e.g., measurements from SEM images) and a height difference determination model. In one version of the model, a measurable variable of the model is expressed in terms of a function of a change in depth of shadow (i.e. relative brightness), wherein the depth of shadow depends on the height difference as well as width difference between two features on a semiconductor wafer. In another version of the model, the measurable variable is expressed in terms of a function of a change of a measured distance between two characteristic points on the real image of a periodic structure with respect to a change in a tilt angle of a scanning electron beam.
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公开(公告)号：US11301983B2
公开(公告)日：2022-04-12
申请号：US16995077
申请日：2020-08-17
Applicant: Applied Materials Israel Ltd.
Inventor： Ishai Schwarzband , Yan Avniel , Sergey Khristo , Mor Baram , Shimon Levi , Doron Girmonsky , Roman Kris
Abstract: An improved technique for determining height difference in patterns provided on semiconductor wafers uses real measurements (e.g., measurements from SEM images) and a height difference determination model. In one version of the model, a measurable variable of the model is expressed in terms of a function of a change in depth of shadow (i.e. relative brightness), wherein the depth of shadow depends on the height difference as well as width difference between two features on a semiconductor wafer. In another version of the model, the measurable variable is expressed in terms of a function of a change of a measured distance between two characteristic points on the real image of a periodic structure with respect to a change in a tilt angle of a scanning electron beam.
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公开(公告)号：US20190088444A1
公开(公告)日：2019-03-21
申请号：US16131289
申请日：2018-09-14
Applicant: Applied Materials Israel, Ltd.
Inventor： Shay Attal , Shaul Cohen , Guy Maoz , Noam Zac , Mor Baram , Lee Moldovan , Ishai Schwarzband , Ron Katzir , Kfir Ben-Zikri , Doron Girmonsky
IPC: H01J37/244 , G01B15/02 , H01J37/29
Abstract: A method for evaluating an object, the method may include acquiring, by a charged particle beam system, an image of an area of a reference object, wherein the area includes multiple instances of a structure of interest, and the structure of interest is of a nanometric scale; determining multiple types of attributes from the image; reducing a number of the attributes to provide reduced attribute information; generating guidelines, based on the reduced attribute information and on reference data, for evaluating the reduced attribute information; and evaluating an actual object by implementing the guidelines.
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公开(公告)号：US20240386589A1
公开(公告)日：2024-11-21
申请号：US18198768
申请日：2023-05-17
Applicant: Applied Materials Israel Ltd.
Inventor： Mor Baram , Gadi Oron , Shmuel Mizrachi , David Uliel , Ifat Neuberger , Eyal Angel
Abstract: An electron beam spot shape reconstruction unit that includes a processing circuit and a memory unit. The processing circuit is configured to reconstruct a shape of an electron beam spot by (i) obtaining multiple groups of images of circular targets of a sample, wherein different groups of images of the multiple groups of images are associated with different polar angles; (ii) processing at least two of the multiple groups of images to determine first-axis edge width information and second-axis edge width information; and (iii) reconstructing the electron beam spot shape based on the first-axis edge width information and second-axis edge width information.
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公开(公告)号：US10748272B2
公开(公告)日：2020-08-18
申请号：US15982918
申请日：2018-05-17
Applicant: Applied Materials Israel Ltd.
Inventor： Ishai Schwarzband , Yan Avniel , Sergey Khristo , Mor Baram , Shimon Levi , Doron Girmonsky , Roman Kris
Abstract: An improved technique for determining height difference in patterns provided on semiconductor wafers uses real measurements (e.g., measurements from SEM images) and a height difference determination model. In one version of the model, a measurable variable of the model is expressed in terms of a function of a change in depth of shadow (i.e. relative brightness), wherein the depth of shadow depends on the height difference as well as width difference between two features on a semiconductor wafer. In another version of the model, the measurable variable is expressed in terms of a function of a change of a measured distance between two characteristic points on the real image of a periodic structure with respect to a change in a tilt angle of a scanning electron beam.
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