公开(公告)号：US20210383529A1

公开(公告)日：2021-12-09

申请号：US17281948

申请日：2019-10-31

申请人： APPLIED MATERIALS ISRAEL LTD.

发明人： Roman KRIS ,  Roi MEIR ,  Sahar LEVIN ,  Ishai SCHWARZBAND ,  Grigory KLEBANOV ,  Shimon LEVI ,  Efrat NOIFELD ,  Hiroshi MIROKU ,  Taku YOSHIZAWA ,  Kasturi SAHA ,  Sharon DUVDEVANI-BAR ,  Vadim VERESCHAGIN

IPC分类号： G06T7/00 ,  G06K9/46 ,  G06K9/00 ,  G06T7/60 ,  G06T7/13 ,  G06T7/194 ,  G01N23/225

摘要： A method for process control of a semiconductor structure fabricated by a series of fabrication steps, the method comprising obtaining an image of the semiconductor structure indicative of at least two individual fabrication steps; wherein the image is generated by scanning the semiconductor structure with a charged particle beam and collecting signals emanating from the semiconductor structure; and processing, by a hardware processor, the image to determining a parameter of the semiconductor structure, wherein processing includes measuring step/s from among the fabrication steps as an individual feature.