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    METHOD FOR MONITORING NANOMETRIC STRUCTURES
    1.
    发明申请
    METHOD FOR MONITORING NANOMETRIC STRUCTURES 审中-公开

    公开(公告)号：US20190219390A1

    公开(公告)日：2019-07-18

    申请号：US15870622

    申请日：2018-01-12

    申请人： Applied Materials Israel, Ltd.

    发明人： Shimon LEVI ,  Ishai SCHWARZBAND ,  Roman KRIS

    IPC分类号： G01B15/08 ,  B82Y35/00

    摘要： A method for monitoring a first nanometric structure formed by a multiple patterning process, the method may include performing a first plurality of measurements to provide a first plurality of measurement results; wherein the performing of the first plurality of measurements comprises illuminating first plurality of locations of a first sidewall of the first nanometric structure by oblique charged particle beams of different tilt angles; and processing, by a hardware processor, the first plurality of measurement results to determine a first attribute of the first nanometric structure.

    MEASURING HEIGHT DIFFERENCE IN PATTERNS ON SEMICONDUCTOR WAFERS
    3.
    发明申请
    MEASURING HEIGHT DIFFERENCE IN PATTERNS ON SEMICONDUCTOR WAFERS 审中-公开

    公开(公告)号：US20180336675A1

    公开(公告)日：2018-11-22

    申请号：US15982918

    申请日：2018-05-17

    申请人： Applied Materials Israel Ltd.

    发明人： Ishai SCHWARZBAND ,  Yan AVNIEL ,  Sergey KHRISTO ,  Mor BARAM ,  Shimon LEVI ,  Doron GIRMONSKY ,  Roman KRIS

    IPC分类号： G06T7/00

    摘要： An improved technique for determining height difference in patterns provided on semiconductor wafers uses real measurements (e.g., measurements from SEM images) and a height difference determination model. In one version of the model, a measurable variable of the model is expressed in terms of a function of a change in depth of shadow (i.e. relative brightness), wherein the depth of shadow depends on the height difference as well as width difference between two features on a semiconductor wafer. In another version of the model, the measurable variable is expressed in terms of a function of a change of a measured distance between two characteristic points on the real image of a periodic structure with respect to a change in a tilt angle of a scanning electron beam.

    TECHNIQUE FOR MEASURING OVERLAY BETWEEN LAYERS OF A MULTILAYER STRUCTURE
    6.
    发明申请
    TECHNIQUE FOR MEASURING OVERLAY BETWEEN LAYERS OF A MULTILAYER STRUCTURE 有权
    用于测量多层结构层之间的覆盖的技术

    公开(公告)号：US20170018066A1

    公开(公告)日：2017-01-19

    申请号：US14798283

    申请日：2015-07-13

    申请人： Applied Materials Israel Ltd.

    发明人： Yakov WEINBERG ,  Ishai SCHWARZBAND ,  Roman KRIS ,  Itay ZAUER ,  Ran GOLDMAN ,  Olga NOVAK ,  Dhananjay Singh RATHORE ,  Ofer ADAN ,  Shimon LEVI

    IPC分类号： G06T7/00

    CPC分类号： G06T7/0006 ,  G06K9/525 ,  G06T7/001 ,  G06T7/10 ,  G06T7/11 ,  G06T7/12 ,  G06T7/143 ,  G06T7/194 ,  G06T7/30 ,  G06T7/337 ,  G06T2207/10061 ,  G06T2207/20116 ,  G06T2207/30148

    摘要： A method for determining overlay between layers of a multilayer structure may include obtaining a given image representing the multilayer structure, obtaining expected images for layers of the multilayer structure, providing a combined expected image of the multilayer structure as a combination of the expected images of said layers, performing registration of the given image against the combined expected image, and providing segmentation of the given image, thereby producing a segmented image, and maps of the layers of said multilayered structure. The method may further include determining overlay between any two selected layers of the multilayer structure by processing the maps of the two selected layers together with the expected images of said two selected layers.

    摘要翻译： 用于确定多层结构的层之间的重叠的方法可以包括获得表示多层结构的给定图像，获得多层结构层的预期图像，提供多层结构的组合预期图像作为所述多层结构的预期图像的组合 执行给定图像对组合预期图像的注册，以及提供给定图像的分割，从而产生分割图像，以及所述多层结构层的映射。 该方法还可以包括通过将所选择的两个层的图与所述两个所选择的层的预期图像一起处理来确定多层结构的任何两个所选择的层之间的覆盖。