公开(公告)号：US3922709A

公开(公告)日：1975-11-25

申请号：US41666973

申请日：1973-11-16

Applicant: ASEA AB

Inventor： WALLMARK JOHN TORKEL ,  BAKOWSKI MIECZYSLAW

IPC: H01L29/73 ,  H01L21/00 ,  H01L21/331 ,  H01L23/29 ,  H01L29/00 ,  H01L29/861 ,  H01L29/40 ,  H01L23/28 ,  H01L29/34 ,  H01L29/74

CPC classification number: H01L23/293 ,  H01L21/00 ,  H01L23/291 ,  H01L29/0661 ,  H01L29/408 ,  H01L29/74 ,  H01L29/8613 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor of the kind comprising at least one pn-junction the doping of which in the p-region (n-region) increases continuously or gradually from the pn-junction, and also having an isolating surface layer at least at the marginal portion of said pn-junction. In this semiconductor a first portion of said surface layer is positioned outside the substantially p-doped (ndoped) region, and a second portion of said surface layer is positioned outside the n-doped (p-doped) region of said pnjunction, said first portion having a permanently negative (positive) surface charge relative to said second portion.

Abstract translation: 一种包括至少一个pn结的半导体，其在p区（n区）中掺杂的至少一个pn结从pn结连续或逐渐增加，并且还具有隔离表面层至少在边界部分 说pn-junction。 在该半导体中，所述表面层的第一部分位于基本p掺杂（n掺杂）区域的外部，并且所述表面层的第二部分位于所述p掺杂（n掺杂）区域的n掺杂（p掺杂）区域的外部， 所述第一部分相对于所述第二部分具有永久的负（正）表面电荷。