公开(公告)号：US20230298885A1

公开(公告)日：2023-09-21

申请号：US18185625

申请日：2023-03-17

Applicant: ASM IP Holding, B.V.

Inventor： Ranjit Borude ,  Shinya Yoshimoto ,  Makoto Igarashi ,  Jhoelle Roche Guhit ,  Pamarti Viswanath

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/34 ,  C23C16/455

CPC classification number: H01L21/02348 ,  H01J37/32449 ,  H01J37/32899 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/02222 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/45553 ,  H01J37/32357 ,  H01J2237/332 ,  H01J37/32733

Abstract: Methods and related systems for at least partially filling recesses comprised in a substrate with a gap filling fluid. The gap filling fluid comprises a Si—N bond. The methods comprise exposing the substrate to a nitrogen and hydrogen-containing gas on the one hand and to vacuum ultraviolet light on the other hand.