公开(公告)号：US12125688B2

公开(公告)日：2024-10-22

申请号：US17183595

申请日：2021-02-24

Applicant: APPLIED MATERIALS, INC.

Inventor： Hamid Noorbakhsh ,  James Hugh Rogers

IPC: H01J37/32

CPC classification number: H01J37/32733 ,  H01J37/32467 ,  H01J37/32715

Abstract: Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a process kit for use in a process chamber includes a slit door having an arcuate profile and including a first plate slidably coupled to a second plate, wherein the first plate is configured to be coupled to an actuator, wherein the second plate has an inner surface that includes silicon, and wherein the inner surface includes a plurality of grooves.

公开(公告)号：US20240290609A1

公开(公告)日：2024-08-29

申请号：US18572959

申请日：2022-06-08

Applicant: Tokyo Electron Limited

Inventor： Tadahiro ISHIZAKA ,  Kunihiro TADA ,  Takashi SAKUMA ,  Yoshiyuki HANADA

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/04 ,  C23C16/08 ,  C23C16/42 ,  C23C16/50 ,  H01J37/32 ,  H01L21/285 ,  H01L21/768

CPC classification number: H01L21/02068 ,  C23C16/0227 ,  C23C16/045 ,  C23C16/08 ,  C23C16/42 ,  C23C16/50 ,  H01J37/3244 ,  H01J37/32733 ,  H01J37/32816 ,  H01J37/32899 ,  H01L21/28518 ,  H01L21/76877 ,  H01J2237/3321

Abstract: A substrate processing method includes: a first oxide film removal process of supplying a first processing gas to a substrate, which includes a first metal film and a silicon-containing film, to remove a metal oxide film on a surface of the first metal film; a silicide formation process of supplying a second processing gas to the substrate to for a silicide on a surface of the silicon-containing film; and a film formation process of supplying a film formation gas to the substrate to deposit a second metal film on the first metal film and the silicide, after the first oxide removal process and the silicide formation process.

公开(公告)号：US20240290591A1

公开(公告)日：2024-08-29

申请号：US18655368

申请日：2024-05-06

Applicant: Tokyo Electron Limited

Inventor： Atsushi SAWACHI ,  Ichiro SONE ,  Takuya NISHIJIMA ,  Suguru SATO

IPC: H01J37/32 ,  G01J3/443

CPC classification number: H01J37/32972 ,  G01J3/443 ,  H01J37/32733

Abstract: A measuring device for a vacuum processing apparatus including a processing chamber having a first gate for loading and unloading a substrate and a second gate different from the first gate is provided. The measuring device includes a case having an opening that is sized to correspond to the second gate of the processing chamber and is airtightly attachable to the second gate, a decompressing mechanism configured to reduce a pressure in the case, and a measuring mechanism accommodated in the case and configured to measure a state in the processing chamber through the opening in a state where the pressure in the case is reduced by the decompressing mechanism.

公开(公告)号：US12057297B2

公开(公告)日：2024-08-06

申请号：US16823046

申请日：2020-03-18

Applicant: Richard DeVito

Inventor： Richard DeVito

IPC: H01J37/32 ,  C23C14/00 ,  C23C14/12 ,  C23C14/14 ,  C23C14/50 ,  C23C14/54 ,  H01J37/34

CPC classification number: H01J37/32458 ,  C23C14/0047 ,  C23C14/0063 ,  C23C14/0078 ,  C23C14/12 ,  C23C14/14 ,  C23C14/50 ,  C23C14/541 ,  H01J37/321 ,  H01J37/32192 ,  H01J37/32733 ,  H01J37/3405 ,  H01J2237/20214 ,  H01J2237/3321

Abstract: In one aspect, a system for depositing a film on a substrate is disclosed, which comprises at least one metallization source for generating metal atoms, and at least one reactive source for generating at least one reactive species. The system further includes an inner cooling cylinder and a substrate cylinder, where the inner cooling cylinder is fixedly positioned relative to the substrate cylinder, and the substrate cylinder at least partially surrounds the inner cooling cylinder. At least one mount is coupled to the substrate cylinder for mounting one or more substrates to the substrate cylinder.

公开(公告)号：US11955318B2

公开(公告)日：2024-04-09

申请号：US17199729

申请日：2021-03-12

Applicant: Applied Materials, Inc.

Inventor： Yongkwan Kim ,  Changhun Lee ,  Kyeong-Tae Lee ,  Chung Hoan Kim ,  Youngmin Shin

IPC: C23C16/40 ,  G03F7/42 ,  H01J37/32

CPC classification number: H01J37/32357 ,  C23C16/402 ,  G03F7/427 ,  H01J37/32724 ,  H01J37/32733 ,  H01J37/32899 ,  H01J2237/338

Abstract: A method for recovering ashing rate in a plasma processing chamber includes positioning a substrate in a processing volume of a processing chamber, wherein the substrate has a silicon chloride residue formed thereon. The method further includes evaporating the silicon chloride residue from the substrate. The method further includes depositing the evaporated silicon chloride on one or more interior surfaces in the processing volume. The method further includes exposing the deposited silicon chloride to an oxidizing environment to convert the deposited silicon chloride to a silicon oxide passivation layer. The oxidizing environment can comprise an oxygen-containing plasma, oxygen radicals, or a combination thereof.

公开(公告)号：US11842915B2

公开(公告)日：2023-12-12

申请号：US17418308

申请日：2020-01-23

Applicant: KYOCERA Corporation

Inventor： Naoki Furukawa

IPC: H01L21/683 ,  H01J37/32

CPC classification number: H01L21/6833 ,  H01J37/32697 ,  H01J37/32733 ,  H01J2237/2007

Abstract: An insulating substrate has a sample holding surface. A support is bonded to the insulating substrate. A first through-hole in the insulating substrate and a second through-hole in the support are continuous with each other to serve as a gas inlet. A porous member is located in the second through-hole. The second through-hole has, at its opening adjacent to the insulating substrate (opening adjacent to the substrate), a larger diameter than the first through-hole. The opening of the second through-hole and an electrostatic attraction electrode are at different positions in a direction parallel to the sample holding surface. The electrostatic attraction electrode and the second through-hole avoid overlapping each other as viewed from above.

公开(公告)号：US20230395361A1

公开(公告)日：2023-12-07

申请号：US18366084

申请日：2023-08-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Hsiang CHENG ,  Che-Wei WU

IPC: H01J37/32 ,  C23C16/52

CPC classification number: H01J37/32926 ,  C23C16/52 ,  H01J37/32981 ,  H01J37/32733 ,  H01J2237/3321

Abstract: A thin-film deposition system includes a top plate positioned above a wafer and configured to generate a plasma during a thin-film deposition process. The system includes a sensor configured to generate sensor signals indicative of a lifetime of a component of the thin-film deposition system, a characteristic of a thin-film deposited by the thin-film deposition system or a characteristic of a process material that flows into the thin-film deposition system. The system includes a control system configured to adjust a relative location of a top plate of the thin-film deposition system with respect to a location of a wafer in the thin-film deposition system during the thin-film deposition process responsive to the sensor signals.

公开(公告)号：US20230307213A1

公开(公告)日：2023-09-28

申请号：US18205690

申请日：2023-06-05

Applicant: Applied Materials, Inc.

Inventor： Tsutomu Tanaka ,  Jared Ahmad Lee ,  Rakesh Ramadas ,  Dmitry A. Dzilno ,  Gregory J. Wilson ,  Sriharish Srinivasan

IPC: H01J37/32

CPC classification number: H01J37/32733 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32522 ,  H01J2237/20235 ,  H01J2237/332

Abstract: The disclosure describes a plasma source assemblies comprising a differential screw assembly, an RF hot electrode, a top cover, an upper housing and a lower housing. The differential screw assembly is configured to provide force to align the plasma source assembly vertically matching planarity of a susceptor. More particularly, the differential screw assembly increases a distance between the top cover and the upper housing to align the gap with the susceptor. The disclosure also provides a better thermal management by cooling fins. A temperature capacity of the plasma source assemblies is extended by using titanium electrode. The disclosure provides a cladding material covering a portion of a first surface of RF hot electrode, a second surface of RF hot electrode, a bottom surface of RF hot electrode, a portion of a surface of the showerhead and a portion of lower housing surface.

公开(公告)号：US20230238223A1

公开(公告)日：2023-07-27

申请号：US18002614

申请日：2021-06-21

Applicant: Lam Research Corporation

Inventor： Nick Ray Linebarger, JR. ,  Fayaz A. Shaikh ,  Kang Il Lee

IPC: H01J37/32 ,  H01L21/687 ,  C23C16/458 ,  C23C16/505

CPC classification number: H01J37/32715 ,  H01L21/68721 ,  C23C16/4585 ,  C23C16/505 ,  H01J2237/2007 ,  H01J37/32733 ,  H01J37/32899 ,  H01J37/32082 ,  H01J2237/332

Abstract: Carrier rings with radially-varied plasma impedance are provided herein. In some embodiments, a carrier ring may include an outer ring that holds a removable inner ring. The outer ring may be formed of a dielectric material such as ceramic. The inner ring may be formed of a metal such as aluminum to provide a desired impedance. In some other embodiments, a carrier ring is formed from a single piece with radially-varying impedances.

公开(公告)号：US20230229133A1

公开(公告)日：2023-07-20

申请号：US18146505

申请日：2022-12-27

Applicant: TENGXI TECHNOLOGY CO. LTD.

Inventor： WEI-HAN LO ,  TIEN-HSIANG HO

IPC: G05B19/18 ,  H01L21/67 ,  H01J37/32 ,  G03F7/42

CPC classification number: G05B19/188 ,  H01L21/67225 ,  H01J37/32899 ,  H01J37/32082 ,  H01J37/32449 ,  G03F7/427 ,  H01J2237/20278 ,  H01J37/32816 ,  H01J2237/20214 ,  H01J2237/20235 ,  H01J2237/186 ,  H01J2237/002 ,  H01J37/32733 ,  G05B2219/45031

Abstract: A semiconductor machine system comprises a plurality of working chambers, wherein the working chambers process materials separately; a control host coupled to the plurality of working chambers, comprising: a main control module coupled to the plurality of working chambers; an analog control module coupled to the plurality of working chambers, and the analog control module is detachably coupled to one or more external devices by serial interface coupling; a digital control module coupled to the plurality of working chambers, and the main control module, the analog control module and the digital control module are coupled to each other; and a plurality of operating units coupled to at least one of the main control module, the analog control module and the digital control module, respectively, to control the plurality of working chambers for processing the materials by the main control module, the analog control module and the digital control module.