公开(公告)号：US20190131124A1

公开(公告)日：2019-05-02

申请号：US15798201

申请日：2017-10-30

Applicant: ASM IP Holding B.V.

Inventor： David Kohen ,  Harald Benjamin Profijt ,  Andrew Kretzschmar

IPC: H01L21/02 ,  H01L29/165

Abstract: A method for forming a forming a semiconductor structure is disclosed. The method may include: forming a silicon oxide layer on a surface of a substrate, depositing a silicon germanium (Si1-xGex) seed layer directly on the silicon oxide layer, and depositing a germanium (Ge) layer directly on the silicon germanium (Si1-xGex) seed layer. Semiconductor structures including a germanium (Ge) layer deposited on silicon oxide utilizing an intermediate silicon germanium (Si1-xGex) seed layer are also disclosed.

公开(公告)号：US10923344B2

公开(公告)日：2021-02-16

申请号：US15798201

申请日：2017-10-30

Applicant: ASM IP Holding B.V.

Inventor： David Kohen ,  Harald Benjamin Profijt ,  Andrew Kretzschmar

IPC: H01L21/02 ,  H01L29/165 ,  H01L27/11582 ,  H01L29/10

Abstract: A method for forming a forming a semiconductor structure is disclosed. The method may include: forming a silicon oxide layer on a surface of a substrate, depositing a silicon germanium (Si1-xGex) seed layer directly on the silicon oxide layer, and depositing a germanium (Ge) layer directly on the silicon germanium (Si1-xGex) seed layer. Semiconductor structures including a germanium (Ge) layer deposited on silicon oxide utilizing an intermediate silicon germanium (Si1-xGex) seed layer are also disclosed.

公开(公告)号：US12040184B2

公开(公告)日：2024-07-16

申请号：US17145499

申请日：2021-01-11

Applicant: ASM IP Holding B.V.

Inventor： David Kohen ,  Harald Benjamin Profijt ,  Andrew Kretzschmar

IPC: H01L29/10 ,  H01L21/02 ,  H01L29/165 ,  H10B43/27

CPC classification number: H01L21/0245 ,  H01L21/02164 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L29/165 ,  H10B43/27 ,  H01L29/1054

Abstract: A method for forming a forming a semiconductor structure is disclosed. The method may include: forming a silicon oxide layer on a surface of a substrate, depositing a silicon germanium (Si1-xGex) seed layer directly on the silicon oxide layer, and depositing a germanium (Ge) layer directly on the silicon germanium (Si1-xGex) seed layer. Semiconductor structures including a germanium (Ge) layer deposited on silicon oxide utilizing an intermediate silicon germanium (Si1-xGex) seed layer are also disclosed.

公开(公告)号：US20210134588A1

公开(公告)日：2021-05-06

申请号：US17145499

申请日：2021-01-11

Applicant: ASM IP Holding B.V.

Inventor： David Kohen ,  Harald Benjamin Profijt ,  Andrew Kretzschmar

IPC: H01L21/02 ,  H01L29/165 ,  H01L27/11582

Abstract: A method for forming a forming a semiconductor structure is disclosed. The method may include: forming a silicon oxide layer on a surface of a substrate, depositing a silicon germanium (Si1−xGex) seed layer directly on the silicon oxide layer, and depositing a germanium (Ge) layer directly on the silicon germanium (Si1−xGex) seed layer. Semiconductor structures including a germanium (Ge) layer deposited on silicon oxide utilizing an intermediate silicon germanium (Si1−xGex) seed layer are also disclosed.