公开(公告)号：US20230077088A1

公开(公告)日：2023-03-09

申请号：US17900065

申请日：2022-08-31

申请人： ASM IP Holding B.V.

发明人： Arpita Saha ,  David de Roest ,  Michael Givens ,  Charles Dezelah ,  Monica Thukkaram ,  Daniele Piumi

IPC分类号： G03F1/22

摘要： Methods of forming structures including a photoresist absorber layer and structures including the absorber layer underlying an extreme ultraviolet (EUV) photoresist are disclosed. Exemplary methods include forming the photoresist absorber layer or underlayer with an oxide of a high atomic number (z) element having an EUV cross section (σα) of greater than 2×106 cm2/mol and then forming the EUV photoresist over the high-z underlayer.

公开(公告)号：US20230071197A1

公开(公告)日：2023-03-09

申请号：US17899928

申请日：2022-08-31

申请人： ASM IP Holding B.V.

发明人： Arpita Saha ,  David de Roest ,  Charles Dezelah ,  Michael Givens

IPC分类号： G03F1/56 ,  G03F7/16 ,  G03F7/004

摘要： Methods of forming structures including a photoresist absorber layer and structures including the photoresist absorber layer are disclosed. Exemplary methods include forming the photoresist absorber layer that includes an element having a relatively high extreme ultraviolet (EUV) sensitivity on a mass basis while having a relatively low EUV sensitivity on a mole basis.

公开(公告)号：US20230091094A1

公开(公告)日：2023-03-23

申请号：US17900578

申请日：2022-08-31

申请人： ASM IP Holding B.V.

发明人： Hannu Huotari ,  Daniele Piumi ,  Yoann Tomczak ,  Ivan Zyulkov ,  Charles Dezelah ,  Arpita Saha ,  David de Roest ,  Jerome Innocent ,  Michael Givens ,  Monica Thukkaram

IPC分类号： G03F7/11 ,  G03F7/16

摘要： Methods of forming structures including a photoresist absorber layer and structures including the photoresist absorber layer are disclosed. Exemplary methods include forming the photoresist absorber layer that includes at least two elements having an EUV cross section (σα) of greater than 2×106 cm2/mol.