公开(公告)号：US20240339493A1

公开(公告)日：2024-10-10

申请号：US18624808

申请日：2024-04-02

Applicant: ASM IP Holding B.V.

Inventor： Alessandra Leonhardt ,  Varun Sharma ,  Vivek Koladi Mootheri ,  Leo Lukose ,  Andrea Illiberi ,  Jerome Innocent ,  Aditya Chauhan

IPC: H01L29/06 ,  H01L21/02 ,  H01L29/778

CPC classification number: H01L29/0607 ,  H01L21/02362 ,  H01L28/75 ,  H01L29/7786

Abstract: Structures and related methods and systems for forming structures. The structures comprise a proximal contact, a distal contact, a high-k dielectric, and at least one of a proximal barrier and a distal barrier. In some embodiments, at least one of the proximal barrier and the distal barrier is constructed and arranged to inhibit Poole-Frenkel emission from the high-k dielectric when a first electric field is applied between the proximal contact and a distal contact in a first electric field direction.

公开(公告)号：US20250043419A1

公开(公告)日：2025-02-06

申请号：US18792680

申请日：2024-08-02

Applicant: ASM IP Holding B.V.

Inventor： Jerome Innocent ,  Andrea Illiberi ,  Leo Lukose ,  YongGyu Han ,  Matthew Surman

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/458 ,  C23C16/46 ,  C23C16/52 ,  C23C16/56

Abstract: A method for forming a film comprising hafnium, zirconium, and oxygen, the method comprising forming the film by a cyclical vapor deposition process under the effect of an electric field.

公开(公告)号：US20240175129A1

公开(公告)日：2024-05-30

申请号：US18518042

申请日：2023-11-22

Applicant: ASM IP Holding B.V.

Inventor： Bart Vermeulen ,  Varun Sharma ,  Jerome Innocent ,  Charles Dezelah ,  Michael Eugene Givens

IPC: C23C16/455 ,  C23C16/22

CPC classification number: C23C16/45527 ,  C23C16/22 ,  C23C16/45553

Abstract: Disclosed are methods for forming layers comprising a group 14 element, a pnictogen, and a chalcogen. In some embodiments, the group 14 element comprises germanium, the pnictogen comprises antimony, and the chalcogen comprises tellurium. The methods comprise executing a plurality of deposition cycles. A deposition cycle comprises exposing a substrate to two different group 14 precursors, to two different pnictogen precursors, or to two different chalcogen precursors. Further discloses are related systems and methods. Suitable systems include atomic layer deposition systems. Suitable devices include phase change memory devices.

公开(公告)号：US20230091094A1

公开(公告)日：2023-03-23

申请号：US17900578

申请日：2022-08-31

Applicant: ASM IP Holding B.V.

Inventor： Hannu Huotari ,  Daniele Piumi ,  Yoann Tomczak ,  Ivan Zyulkov ,  Charles Dezelah ,  Arpita Saha ,  David de Roest ,  Jerome Innocent ,  Michael Givens ,  Monica Thukkaram

IPC: G03F7/11 ,  G03F7/16

Abstract: Methods of forming structures including a photoresist absorber layer and structures including the photoresist absorber layer are disclosed. Exemplary methods include forming the photoresist absorber layer that includes at least two elements having an EUV cross section (σα) of greater than 2×106 cm2/mol.