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公开(公告)号:US11251068B2
公开(公告)日:2022-02-15
申请号:US16601593
申请日:2019-10-15
Applicant: ASM IP Holding B.V.
Inventor: JaeMin Roh , DaeYoun Kim , Julll Lee , ChangMin Lee
IPC: H01L21/687 , H01L21/68 , H01J37/32
Abstract: A substrate processing apparatus capable of improving thin film uniformity on a substrate by controlling the position of a substrate supporting apparatus includes a plurality of reactors, wherein each of the reactors includes a substrate supporting apparatus; a ring surrounding the substrate supporting apparatus; and an alignment device for moving the substrate supporting apparatus, wherein the ring is installed such that one surface of the ring comes in contact with the substrate supporting apparatus as the substrate supporting apparatus moves and the ring is movable by a pushing force of the substrate supporting apparatus.
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公开(公告)号:US20230253238A1
公开(公告)日:2023-08-10
申请号:US18136559
申请日:2023-04-19
Applicant: ASM IP Holding B.V.
Inventor: JaeMin Roh , JuIll Lee , GunYong Park
IPC: H01L21/687 , H01L21/67
CPC classification number: H01L21/68764 , H01L21/6708
Abstract: A substrate support assembly arranged in a chamber includes: a support plate including a first surface on which a substrate is seated; a driver configured to tilt the support plate such that the first surface is inclined with respect to a reference surface by a lower inclination angle; and a controller configured to control the driver such that the lower inclination angle is adjusted based on an upper inclination angle formed by the inclination of the gas supplier coupled to the upper surface of the chamber with respect to the reference surface.
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公开(公告)号:US20220336240A1
公开(公告)日:2022-10-20
申请号:US17721892
申请日:2022-04-15
Applicant: ASM IP Holding B.V.
Inventor: JaeMin Roh , ChangMin Lee
IPC: H01L21/67 , H01L21/687 , H01L21/68
Abstract: A substrate processing apparatus capable of improving the uniformity of thin films on a substrate includes: a substrate support unit having a first slope; and a flow control ring arranged to surround the substrate support unit and having a second slope, wherein, during alignment, as the substrate support unit moves in a first direction, the first slope and the second slope contact each other, and due to the contact, the flow control ring slides in a second direction that is different from the first direction.
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公开(公告)号:US20210156024A1
公开(公告)日:2021-05-27
申请号:US17100936
申请日:2020-11-22
Applicant: ASM IP Holding B.V.
Inventor: JaeMin Roh , JuIll Lee
IPC: C23C16/44
Abstract: A substrate processing apparatus capable of preventing deflection of exhaust flow which may occur when an asymmetric exhaust structure is introduced includes: an exhaust unit providing an exhaust space surrounding a reaction space; an exhaust port connected to the exhaust unit; and a flow control unit disposed in the exhaust space, wherein the exhaust port is arranged asymmetrically with respect to the reaction space, and the flow control unit may include: an upper flow control plate including a plurality of first through holes; and a lower flow control plate disposed below the upper flow control plate and including a plurality of second through holes.
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公开(公告)号:US12173400B2
公开(公告)日:2024-12-24
申请号:US18239856
申请日:2023-08-30
Applicant: ASM IP Holding B.V.
Inventor: JaeMin Roh
Abstract: A substrate processing device with improved exhaust efficiency and process reproducibility includes: a plurality of reactors; a plurality of exhaust ports in communication with the plurality of reactors and symmetrically arranged with respect to the reactors, respectively; and a plurality of exhaust channels in communication with the plurality of exhaust ports, wherein each exhaust channel includes a plurality of exhaust channels including a first channel extending in the first direction and a second channel extending in a second direction different from the first direction, wherein the plurality of exhaust channels extend through components supporting at least a portion of the plurality of reactors.
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公开(公告)号:US20230399740A1
公开(公告)日:2023-12-14
申请号:US18239856
申请日:2023-08-30
Applicant: ASM IP Holding B.V.
Inventor: JaeMin Roh
IPC: C23C16/44
CPC classification number: C23C16/4412 , H01J2237/3323 , H01J37/32834
Abstract: A substrate processing device with improved exhaust efficiency and process reproducibility includes: a plurality of reactors; a plurality of exhaust ports in communication with the plurality of reactors and symmetrically arranged with respect to the reactors, respectively; and a plurality of exhaust channels in communication with the plurality of exhaust ports, wherein each exhaust channel includes a plurality of exhaust channels including a first channel extending in the first direction and a second channel extending in a second direction different from the first direction, wherein the plurality of exhaust channels extend through components supporting at least a portion of the plurality of reactors.
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公开(公告)号:US20210013085A1
公开(公告)日:2021-01-14
申请号:US16922741
申请日:2020-07-07
Applicant: ASM IP Holding B.V.
Inventor: JaeMin Roh , JuIll Lee , GunYong Park
IPC: H01L21/687 , H01L21/67
Abstract: A substrate support assembly arranged in a chamber includes: a support plate including a first surface on which a substrate is seated; a driver configured to tilt the support plate such that the first surface is inclined with respect to a reference surface by a lower inclination angle; and a controller configured to control the driver such that the lower inclination angle is adjusted based on an upper inclination angle formed by the inclination of the gas supplier coupled to the upper surface of the chamber with respect to the reference surface.
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公开(公告)号:US12107000B2
公开(公告)日:2024-10-01
申请号:US18136559
申请日:2023-04-19
Applicant: ASM IP Holding B.V.
Inventor: JaeMin Roh , JuIll Lee , GunYong Park
IPC: H01L21/68 , H01L21/67 , H01L21/687
CPC classification number: H01L21/68764 , H01L21/6708
Abstract: A substrate support assembly arranged in a chamber includes: a support plate including a first surface on which a substrate is seated; a driver configured to tilt the support plate such that the first surface is inclined with respect to a reference surface by a lower inclination angle; and a controller configured to control the driver such that the lower inclination angle is adjusted based on an upper inclination angle formed by the inclination of the gas supplier coupled to the upper surface of the chamber with respect to the reference surface.
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公开(公告)号:US11767589B2
公开(公告)日:2023-09-26
申请号:US17330999
申请日:2021-05-26
Applicant: ASM IP Holding B.V.
Inventor: JaeMin Roh
CPC classification number: C23C16/4412 , H01J37/32834 , H01J2237/3323 , H01L21/67017
Abstract: A substrate processing device with improved exhaust efficiency and process reproducibility includes: a plurality of reactors; a plurality of exhaust ports in communication with the plurality of reactors and symmetrically arranged with respect to the reactors, respectively; and a plurality of exhaust channels in communication with the plurality of exhaust ports, wherein each exhaust channel includes a plurality of exhaust channels including a first channel extending in the first direction and a second channel extending in a second direction different from the first direction, wherein the plurality of exhaust channels extend through components supporting at least a portion of the plurality of reactors.
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公开(公告)号:US11664267B2
公开(公告)日:2023-05-30
申请号:US16922741
申请日:2020-07-07
Applicant: ASM IP Holding B.V.
Inventor: JaeMin Roh , Julll Lee , GunYong Park
IPC: H01L21/68 , H01L21/687 , H01L21/67
CPC classification number: H01L21/68764 , H01L21/6708
Abstract: A substrate support assembly arranged in a chamber includes: a support plate including a first surface on which a substrate is seated; a driver configured to tilt the support plate such that the first surface is inclined with respect to a reference surface by a lower inclination angle; and a controller configured to control the driver such that the lower inclination angle is adjusted based on an upper inclination angle formed by the inclination of the gas supplier coupled to the upper surface of the chamber with respect to the reference surface.
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