Substrate processing apparatus and substrate processing method

    公开(公告)号:US11251068B2

    公开(公告)日:2022-02-15

    申请号:US16601593

    申请日:2019-10-15

    Abstract: A substrate processing apparatus capable of improving thin film uniformity on a substrate by controlling the position of a substrate supporting apparatus includes a plurality of reactors, wherein each of the reactors includes a substrate supporting apparatus; a ring surrounding the substrate supporting apparatus; and an alignment device for moving the substrate supporting apparatus, wherein the ring is installed such that one surface of the ring comes in contact with the substrate supporting apparatus as the substrate supporting apparatus moves and the ring is movable by a pushing force of the substrate supporting apparatus.

    SUBSTRATE SUPPORT ASSEMBLY AND SUBSTRATE PROCESSING DEVICE INCLUDING THE SAME

    公开(公告)号:US20230253238A1

    公开(公告)日:2023-08-10

    申请号:US18136559

    申请日:2023-04-19

    CPC classification number: H01L21/68764 H01L21/6708

    Abstract: A substrate support assembly arranged in a chamber includes: a support plate including a first surface on which a substrate is seated; a driver configured to tilt the support plate such that the first surface is inclined with respect to a reference surface by a lower inclination angle; and a controller configured to control the driver such that the lower inclination angle is adjusted based on an upper inclination angle formed by the inclination of the gas supplier coupled to the upper surface of the chamber with respect to the reference surface.

    SEMICONDUCTOR PROCESSING APPARATUS

    公开(公告)号:US20220336240A1

    公开(公告)日:2022-10-20

    申请号:US17721892

    申请日:2022-04-15

    Abstract: A substrate processing apparatus capable of improving the uniformity of thin films on a substrate includes: a substrate support unit having a first slope; and a flow control ring arranged to surround the substrate support unit and having a second slope, wherein, during alignment, as the substrate support unit moves in a first direction, the first slope and the second slope contact each other, and due to the contact, the flow control ring slides in a second direction that is different from the first direction.

    SUBSTRATE PROCESSING APPARATUS
    4.
    发明申请

    公开(公告)号:US20210156024A1

    公开(公告)日:2021-05-27

    申请号:US17100936

    申请日:2020-11-22

    Abstract: A substrate processing apparatus capable of preventing deflection of exhaust flow which may occur when an asymmetric exhaust structure is introduced includes: an exhaust unit providing an exhaust space surrounding a reaction space; an exhaust port connected to the exhaust unit; and a flow control unit disposed in the exhaust space, wherein the exhaust port is arranged asymmetrically with respect to the reaction space, and the flow control unit may include: an upper flow control plate including a plurality of first through holes; and a lower flow control plate disposed below the upper flow control plate and including a plurality of second through holes.

    Substrate processing device
    5.
    发明授权

    公开(公告)号:US12173400B2

    公开(公告)日:2024-12-24

    申请号:US18239856

    申请日:2023-08-30

    Inventor: JaeMin Roh

    Abstract: A substrate processing device with improved exhaust efficiency and process reproducibility includes: a plurality of reactors; a plurality of exhaust ports in communication with the plurality of reactors and symmetrically arranged with respect to the reactors, respectively; and a plurality of exhaust channels in communication with the plurality of exhaust ports, wherein each exhaust channel includes a plurality of exhaust channels including a first channel extending in the first direction and a second channel extending in a second direction different from the first direction, wherein the plurality of exhaust channels extend through components supporting at least a portion of the plurality of reactors.

    SUBSTRATE PROCESSING DEVICE
    6.
    发明公开

    公开(公告)号:US20230399740A1

    公开(公告)日:2023-12-14

    申请号:US18239856

    申请日:2023-08-30

    Inventor: JaeMin Roh

    CPC classification number: C23C16/4412 H01J2237/3323 H01J37/32834

    Abstract: A substrate processing device with improved exhaust efficiency and process reproducibility includes: a plurality of reactors; a plurality of exhaust ports in communication with the plurality of reactors and symmetrically arranged with respect to the reactors, respectively; and a plurality of exhaust channels in communication with the plurality of exhaust ports, wherein each exhaust channel includes a plurality of exhaust channels including a first channel extending in the first direction and a second channel extending in a second direction different from the first direction, wherein the plurality of exhaust channels extend through components supporting at least a portion of the plurality of reactors.

    SUBSTRATE SUPPORT ASSEMBLY AND SUBSTRATE PROCESSING DEVICE INCLUDING THE SAME

    公开(公告)号:US20210013085A1

    公开(公告)日:2021-01-14

    申请号:US16922741

    申请日:2020-07-07

    Abstract: A substrate support assembly arranged in a chamber includes: a support plate including a first surface on which a substrate is seated; a driver configured to tilt the support plate such that the first surface is inclined with respect to a reference surface by a lower inclination angle; and a controller configured to control the driver such that the lower inclination angle is adjusted based on an upper inclination angle formed by the inclination of the gas supplier coupled to the upper surface of the chamber with respect to the reference surface.

    Substrate processing device
    9.
    发明授权

    公开(公告)号:US11767589B2

    公开(公告)日:2023-09-26

    申请号:US17330999

    申请日:2021-05-26

    Inventor: JaeMin Roh

    Abstract: A substrate processing device with improved exhaust efficiency and process reproducibility includes: a plurality of reactors; a plurality of exhaust ports in communication with the plurality of reactors and symmetrically arranged with respect to the reactors, respectively; and a plurality of exhaust channels in communication with the plurality of exhaust ports, wherein each exhaust channel includes a plurality of exhaust channels including a first channel extending in the first direction and a second channel extending in a second direction different from the first direction, wherein the plurality of exhaust channels extend through components supporting at least a portion of the plurality of reactors.

Patent Agency Ranking