公开(公告)号：US12080527B2

公开(公告)日：2024-09-03

申请号：US17626244

申请日：2020-07-14

申请人： SOLERAS ADVANCED COATINGS BV

发明人： Wilmert De Bosscher ,  Ivan Van De Putte ,  Niek Dewilde

IPC分类号： H01J37/32 ,  C23C14/34 ,  C23C14/35 ,  C23C14/50 ,  H01J37/34

CPC分类号： H01J37/32752 ,  C23C14/3407 ,  C23C14/35 ,  C23C14/50 ,  C23C14/505 ,  H01J37/3405 ,  H01J37/347 ,  H01J2237/20214 ,  H01J2237/20221 ,  H01J2237/3323

摘要： A movement system is provided for moving a non-flat substrate across a sputter flux distribution without circumferentially exposing the non-flat substrate to the sputter flux distribution. The movement system is arranged for a first movement of translationally transporting the non-flat substrate along the sputter flux distribution, and a second movement of translating and/or rotating the non-flat substrate with respect to the sputter flux distribution.

公开(公告)号：US20240249923A1

公开(公告)日：2024-07-25

申请号：US18624655

申请日：2024-04-02

申请人： Kokusai Electric Corporation

发明人： Akihiro SATO ,  Tsuyoshi Takeda ,  Yukitomo Hirochi

IPC分类号： H01J37/32 ,  C23C16/458 ,  C23C16/50 ,  C23C16/509 ,  C23C16/52 ,  H01L21/02 ,  H05H1/46

CPC分类号： H01J37/32568 ,  C23C16/4587 ,  C23C16/50 ,  C23C16/509 ,  C23C16/52 ,  H01J37/3244 ,  H01J37/32834 ,  H01L21/0217 ,  H01L21/02274 ,  H05H1/46 ,  H01J2237/327 ,  H01J2237/3323 ,  H01L21/02211 ,  H01L21/0228

摘要： There is provided a substrate processing apparatus that includes a process chamber in which at least one substrate is processed; a gas supplier configured to supply a gas; and a buffer structure. The buffer structure includes at least two plasma generation regions in which gas is converted into plasma by a pair of electrodes connected to a high-frequency power supply and an electrode to be grounded, a first gas supply port that supplies a gas generated in a first plasma generation region among the at least two plasma generation regions, and a second gas supply port that supplies a gas generated in a second plasma generation region among the at least two plasma generation regions.

公开(公告)号：US20240242946A1

公开(公告)日：2024-07-18

申请号：US18098131

申请日：2023-01-18

申请人： SKY TECH INC.

发明人： JING-CHENG LIN ,  JUNG-HUA CHANG

IPC分类号： H01J37/32 ,  G01B11/06 ,  G01N27/04 ,  H01L21/66

CPC分类号： H01J37/3299 ,  G01B11/06 ,  G01N27/04 ,  H01L22/12 ,  H01J2237/24592 ,  H01J2237/3323 ,  H01L29/7786

摘要： This disclosure is a low power plasma system monitor method, which can be used to monitor the uniformity of the low power plasma system. A deposition process is performed on a testing substrate to form a metal film on the testing substrate. The resistance of the metal film on the testing substrate is measured to generate a plurality of first sheet resistance values. A testing pretreatment process is performed on the testing substrate through the low power plasma system to form a testing passivation on the metal film of the testing substrate. The resistance of the testing substrate after the testing pretreatment process is measured to generate a plurality of second sheet resistance values. Then the first sheet resistance values and the second sheet resistance values are analyzed to know the uniformity of the low power plasma system.

公开(公告)号：US20240136160A1

公开(公告)日：2024-04-25

申请号：US17971205

申请日：2022-10-20

申请人： Applied Materials, Inc.

发明人： Zheng John YE ,  Andrew C. LAM ,  Zeqiong ZHAO ,  Jianhua ZHOU ,  Hshiang AN ,  Suhail ANWAR ,  Yoshitake NAKAJIMA ,  Fu-ting CHANG

IPC分类号： H01J37/32 ,  C23C16/458 ,  C23C16/505 ,  C23C16/52

CPC分类号： H01J37/32715 ,  C23C16/4586 ,  C23C16/505 ,  C23C16/52 ,  H01J37/321 ,  H01J37/32183 ,  H01J2237/0262 ,  H01J2237/20235 ,  H01J2237/24564 ,  H01J2237/3321 ,  H01J2237/3323

摘要： Embodiments of the present disclosure generally relate to methods and apparatus for measuring and controlling local impedances at a substrate support in a plasma processing chamber during processing of a substrate. A substrate support includes a plurality of substrate support pins wherein the radio frequency voltage, current and phase of each of the plurality of substrate support pins are measured and impedances of the support pins are adjusted in real time. Each of the substrate support pins is coupled to an associated adjustable impedance circuit that may be remotely controlled. In one embodiment a variable capacitor is used to adjust the impedance of the impedance circuit coupled to the associated substrate support pin and may be remotely adjusted with a stepper motor. In another embodiment a microcontroller may control the impedance adjustments for all of the plurality of substrate support pins and may be used to track these impedances with each other and with a bulk impedance of the plasma processing chamber.

公开(公告)号：US20240014018A1

公开(公告)日：2024-01-11

申请号：US18372126

申请日：2023-09-24

申请人： SPTS Technologies Limited

发明人： Tony WILBY ,  Steve BURGESS ,  Adrian THOMAS ,  Rhonda HYNDMAN ,  Scott HAYMORE ,  Clive WIDDICKS ,  Ian MONCRIEFF

IPC分类号： H01J37/34 ,  C23C14/34 ,  C23C14/35 ,  C23C14/18 ,  C23C14/06 ,  C23C14/54

CPC分类号： H01J37/3452 ,  C23C14/3485 ,  C23C14/345 ,  C23C14/351 ,  C23C14/185 ,  C23C14/0641 ,  C23C14/542 ,  H01J37/3467 ,  H01J37/347 ,  H01J2237/3323

摘要： A magnet assembly is disclosed for steering ions used in the formation of a material layer upon a substrate during a pulsed DC physical vapour deposition process. Apparatus and methods are also disclosed incorporating the assembly for controlling thickness variation in a material layer formed via pulsed DC physical vapour deposition. The magnet assembly comprises a magnetic field generating arrangement for generating a magnetic field proximate the substrate and means for rotating the ion steering magnetic field generating arrangement about an axis of rotation, relative to the substrate. The magnetic field generating arrangement comprises a plurality of magnets configured to an array which extends around the axis of rotation, wherein the array of magnets are configured to generate a varying magnetic field strength along a radial direction relative to the axis of rotation.

公开(公告)号：US11767589B2

公开(公告)日：2023-09-26

申请号：US17330999

申请日：2021-05-26

申请人： ASM IP Holding B.V.

发明人： JaeMin Roh

IPC分类号： H01J37/32 ,  C23C16/44 ,  H01L21/67

CPC分类号： C23C16/4412 ,  H01J37/32834 ,  H01J2237/3323 ,  H01L21/67017

摘要： A substrate processing device with improved exhaust efficiency and process reproducibility includes: a plurality of reactors; a plurality of exhaust ports in communication with the plurality of reactors and symmetrically arranged with respect to the reactors, respectively; and a plurality of exhaust channels in communication with the plurality of exhaust ports, wherein each exhaust channel includes a plurality of exhaust channels including a first channel extending in the first direction and a second channel extending in a second direction different from the first direction, wherein the plurality of exhaust channels extend through components supporting at least a portion of the plurality of reactors.

公开(公告)号：US20230223238A1

公开(公告)日：2023-07-13

申请号：US17997802

申请日：2021-04-30

申请人： Lam Research Corporation

发明人： Tongtong Guo ,  Rachel E. Batzer ,  Huatan Qiu ,  Lee Chen ,  Bo Gong ,  Zhe Gui

IPC分类号： H01J37/32

CPC分类号： H01J37/32449 ,  H01J37/32357 ,  H01J2237/3321 ,  H01J2237/3323

摘要： An apparatus for forming a plasma may include one or more coupling ports to accept and RF current. The apparatus may additionally include a receptacle to accommodate one or more gases, in which the receptacle is oriented along a first axis. The apparatus may additionally include an RF coupling structure, oriented in a plane and substantially surrounding the receptacle, the RF coupling structure can be configured to conduct an RF current to bring about formation of the plasma within the receptacle. The apparatus may further include one or more linkages, coupled to the RF coupling structure, which may permit the plane of the RF coupling structure to pivot about a second axis so as to tilt the plane of the RF coupling structure toward the first axis.

公开(公告)号：US11664199B2

公开(公告)日：2023-05-30

申请号：US16655217

申请日：2019-10-16

申请人： ASM IP Holding B.V.

发明人： JaeMin Roh ,  DaeYoun Kim ,  JulIl Lee ,  ChangMin Lee

IPC分类号： C23C16/458 ,  H01J37/32 ,  H01L21/02 ,  H01L21/687 ,  H01L21/67 ,  H01L21/68 ,  C23C16/505 ,  C23C16/455

CPC分类号： H01J37/32715 ,  C23C16/4585 ,  H01J37/32642 ,  H01L21/02274 ,  H01L21/6719 ,  H01L21/68 ,  H01L21/68764 ,  C23C16/45536 ,  C23C16/505 ,  H01J2237/20285 ,  H01J2237/3321 ,  H01J2237/3323

摘要： A substrate processing method capable of improving thin film uniformity on a substrate by controlling the position of a substrate supporting apparatus includes: a first operation of moving the substrate supporting apparatus in a first direction by a first predetermined distance; a second operation of moving the substrate supporting apparatus in a second direction by a second predetermined distance; a third operation of moving the substrate supporting apparatus in the second direction by the first predetermined distance; and a fourth operation of moving the substrate supporting apparatus in the first direction by the second predetermined distance, wherein the second direction may be opposite to the first direction.

公开(公告)号：US20190252161A1

公开(公告)日：2019-08-15

申请号：US15898133

申请日：2018-02-15

申请人： Applied Materials, Inc.

发明人： Shuran SHENG ,  Shinobu ABE ,  Keita KUWAHARA ,  Chang Hee SHIN ,  Su Ho CHO

IPC分类号： H01J37/32 ,  C23C16/509

CPC分类号： H01J37/32669 ,  C23C16/509 ,  H01J37/32183 ,  H01J37/3244 ,  H01J2237/3321 ,  H01J2237/3323

摘要： An apparatus for plasma processing of substrates is disclosed. A plasma processing chamber is provided which includes a chamber body and a lid. The lid includes a faceplate coupled to a backing plate. The faceplate and the backing plate are disposed within a processing volume defined by the chamber body and the lid. One or more ferrite blocks are coupled to the backing plate to modulate an electromagnetic field created by an RF current from an RF generator. A gas feed assembly including a gas source, a remote plasma source, and a zero field feed through are coupled to, and in fluid communication with, the processing volume through the backing plate and faceplate.

公开(公告)号：US20180308664A1

公开(公告)日：2018-10-25

申请号：US15960382

申请日：2018-04-23

申请人： Kenneth S. Collins ,  Kartik Ramaswamy ,  Yue Guo ,  Shahid Rauf ,  Kallol Bera ,  James D. Carducci ,  Michael R. Rice

发明人： Kenneth S. Collins ,  Kartik Ramaswamy ,  Yue Guo ,  Shahid Rauf ,  Kallol Bera ,  James D. Carducci ,  Michael R. Rice

IPC分类号： H01J37/32 ,  C23C16/455

CPC分类号： H01J37/32183 ,  C23C16/4554 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32449 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32715 ,  H01J2237/1825 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/6831

摘要： A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distributor to deliver a processing gas to the plasma chamber, a pump coupled to the plasma chamber to evacuate the chamber, a workpiece support to hold a workpiece, and an intra-chamber electrode assembly including a plurality of filaments extending laterally through the plasma chamber between a ceiling of the plasma chamber and the workpiece support. At least one bus is electrically connected to a conductor of each filament. An RF power source is configured to apply a first RF signal of a first frequency to the plurality of filaments at a first location on at least one bus, and to apply a second RF signal of different second frequency to the plurality of filaments at a different second location on the at least one bus.