公开(公告)号：US10714350B2

公开(公告)日：2020-07-14

申请号：US15795056

申请日：2017-10-26

Applicant: ASM IP Holding B.V.

Inventor： Jerry Peijun Chen ,  Fred Alokozai

IPC: H01L21/285 ,  H01L21/28 ,  H01L49/02 ,  H01L23/532 ,  H01L21/768 ,  H01L29/49 ,  H01L27/108

Abstract: Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures are provided. In some embodiments methods may include contacting a substrate with a first reactant comprising a transition metal precursor, contacting the substrate with a second reactant comprising a niobium precursor and contacting the substrate with a third reactant comprising a nitrogen precursor. In some embodiments related semiconductor device structures may include a semiconductor body and an electrode comprising a transition metal niobium nitride disposed over the semiconductor body.

公开(公告)号：US20240030035A1

公开(公告)日：2024-01-25

申请号：US18376597

申请日：2023-10-04

Applicant: ASM IP Holding B.V.

Inventor： Jerry Peijun Chen ,  Fred Alokozai

IPC: H01L21/285 ,  H01L21/28 ,  H01L23/532 ,  H01L21/768 ,  H01L29/49 ,  H10B12/00 ,  C23C16/34 ,  C23C16/455 ,  H01L21/02

CPC classification number: H01L21/28568 ,  H01L21/28556 ,  H01L21/28088 ,  H01L28/60 ,  H01L23/53266 ,  H01L21/76849 ,  H01L29/4966 ,  H01L21/76847 ,  H01L28/90 ,  H01L23/53238 ,  H01L21/28562 ,  H01L23/53209 ,  H01L21/76843 ,  H10B12/00 ,  C23C16/34 ,  C23C16/45531 ,  H01L28/91 ,  H01L21/0228 ,  H01L21/02205 ,  H01L21/0254 ,  H10B12/033 ,  H01L2924/01041

Abstract: Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures are provided. In some embodiments methods may include contacting a substrate with a first reactant comprising a transition metal precursor, contacting the substrate with a second reactant comprising a niobium precursor and contacting the substrate with a third reactant comprising a nitrogen precursor. In some embodiments related semiconductor device structures may include a semiconductor body and an electrode comprising a transition metal niobium nitride disposed over the semiconductor body.

公开(公告)号：US11810788B2

公开(公告)日：2023-11-07

申请号：US16893206

申请日：2020-06-04

Applicant: ASM IP Holding B.V.

Inventor： Jerry Peijun Chen ,  Fred Alokozai

IPC: C23C16/34 ,  C23C16/455 ,  H01L21/285 ,  H01L21/28 ,  H01L49/02 ,  H01L23/532 ,  H01L21/768 ,  H01L29/49 ,  H10B12/00 ,  H01L21/02

CPC classification number: H01L21/28568 ,  C23C16/34 ,  C23C16/45531 ,  H01L21/0228 ,  H01L21/0254 ,  H01L21/02205 ,  H01L21/28088 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76847 ,  H01L21/76849 ,  H01L23/53209 ,  H01L23/53238 ,  H01L23/53266 ,  H01L28/60 ,  H01L28/90 ,  H01L28/91 ,  H01L29/4966 ,  H10B12/00 ,  H01L2924/01041 ,  H10B12/033

Abstract: Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures are provided. In some embodiments methods may include contacting a substrate with a first reactant comprising a transition metal precursor, contacting the substrate with a second reactant comprising a niobium precursor and contacting the substrate with a third reactant comprising a nitrogen precursor. In some embodiments related semiconductor device structures may include a semiconductor body and an electrode comprising a transition metal niobium nitride disposed over the semiconductor body.

公开(公告)号：US20200303196A1

公开(公告)日：2020-09-24

申请号：US16893206

申请日：2020-06-04

Applicant: ASM IP Holding B.V.

Inventor： Jerry Peijun Chen ,  Fred Alokozai

IPC: H01L21/285 ,  H01L21/28 ,  H01L49/02 ,  H01L23/532 ,  H01L21/768 ,  H01L29/49 ,  H01L27/108

Abstract: Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures are provided. In some embodiments methods may include contacting a substrate with a first reactant comprising a transition metal precursor, contacting the substrate with a second reactant comprising a niobium precursor and contacting the substrate with a third reactant comprising a nitrogen precursor. In some embodiments related semiconductor device structures may include a semiconductor body and an electrode comprising a transition metal niobium nitride disposed over the semiconductor body.

公开(公告)号：US20180158688A1

公开(公告)日：2018-06-07

申请号：US15795056

申请日：2017-10-26

Applicant: ASM IP Holding B.V.

Inventor： Jerry Peijun Chen ,  Fred Alokozai

IPC: H01L21/285 ,  H01L21/28 ,  H01L49/02 ,  H01L21/768 ,  H01L29/49 ,  H01L27/108 ,  H01L23/532

CPC classification number: H01L21/28568 ,  H01L21/28088 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76847 ,  H01L21/76849 ,  H01L23/53209 ,  H01L23/53238 ,  H01L23/53266 ,  H01L27/108 ,  H01L27/10852 ,  H01L28/60 ,  H01L28/90 ,  H01L29/4966

Abstract: Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures are provided. In some embodiments methods may include contacting a substrate with a first reactant comprising a transition metal precursor, contacting the substrate with a second reactant comprising a niobium precursor and contacting the substrate with a third reactant comprising a nitrogen precursor. In some embodiments related semiconductor device structures may include a semiconductor body and an electrode comprising a transition metal niobium nitride disposed over the semiconductor body.