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公开(公告)号:US10714350B2
公开(公告)日:2020-07-14
申请号:US15795056
申请日:2017-10-26
Applicant: ASM IP Holding B.V.
Inventor: Jerry Peijun Chen , Fred Alokozai
IPC: H01L21/285 , H01L21/28 , H01L49/02 , H01L23/532 , H01L21/768 , H01L29/49 , H01L27/108
Abstract: Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures are provided. In some embodiments methods may include contacting a substrate with a first reactant comprising a transition metal precursor, contacting the substrate with a second reactant comprising a niobium precursor and contacting the substrate with a third reactant comprising a nitrogen precursor. In some embodiments related semiconductor device structures may include a semiconductor body and an electrode comprising a transition metal niobium nitride disposed over the semiconductor body.
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公开(公告)号:US20240030035A1
公开(公告)日:2024-01-25
申请号:US18376597
申请日:2023-10-04
Applicant: ASM IP Holding B.V.
Inventor: Jerry Peijun Chen , Fred Alokozai
IPC: H01L21/285 , H01L21/28 , H01L23/532 , H01L21/768 , H01L29/49 , H10B12/00 , C23C16/34 , C23C16/455 , H01L21/02
CPC classification number: H01L21/28568 , H01L21/28556 , H01L21/28088 , H01L28/60 , H01L23/53266 , H01L21/76849 , H01L29/4966 , H01L21/76847 , H01L28/90 , H01L23/53238 , H01L21/28562 , H01L23/53209 , H01L21/76843 , H10B12/00 , C23C16/34 , C23C16/45531 , H01L28/91 , H01L21/0228 , H01L21/02205 , H01L21/0254 , H10B12/033 , H01L2924/01041
Abstract: Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures are provided. In some embodiments methods may include contacting a substrate with a first reactant comprising a transition metal precursor, contacting the substrate with a second reactant comprising a niobium precursor and contacting the substrate with a third reactant comprising a nitrogen precursor. In some embodiments related semiconductor device structures may include a semiconductor body and an electrode comprising a transition metal niobium nitride disposed over the semiconductor body.
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公开(公告)号:US11810788B2
公开(公告)日:2023-11-07
申请号:US16893206
申请日:2020-06-04
Applicant: ASM IP Holding B.V.
Inventor: Jerry Peijun Chen , Fred Alokozai
IPC: C23C16/34 , C23C16/455 , H01L21/285 , H01L21/28 , H01L49/02 , H01L23/532 , H01L21/768 , H01L29/49 , H10B12/00 , H01L21/02
CPC classification number: H01L21/28568 , C23C16/34 , C23C16/45531 , H01L21/0228 , H01L21/0254 , H01L21/02205 , H01L21/28088 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76847 , H01L21/76849 , H01L23/53209 , H01L23/53238 , H01L23/53266 , H01L28/60 , H01L28/90 , H01L28/91 , H01L29/4966 , H10B12/00 , H01L2924/01041 , H10B12/033
Abstract: Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures are provided. In some embodiments methods may include contacting a substrate with a first reactant comprising a transition metal precursor, contacting the substrate with a second reactant comprising a niobium precursor and contacting the substrate with a third reactant comprising a nitrogen precursor. In some embodiments related semiconductor device structures may include a semiconductor body and an electrode comprising a transition metal niobium nitride disposed over the semiconductor body.
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公开(公告)号:US20200303196A1
公开(公告)日:2020-09-24
申请号:US16893206
申请日:2020-06-04
Applicant: ASM IP Holding B.V.
Inventor: Jerry Peijun Chen , Fred Alokozai
IPC: H01L21/285 , H01L21/28 , H01L49/02 , H01L23/532 , H01L21/768 , H01L29/49 , H01L27/108
Abstract: Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures are provided. In some embodiments methods may include contacting a substrate with a first reactant comprising a transition metal precursor, contacting the substrate with a second reactant comprising a niobium precursor and contacting the substrate with a third reactant comprising a nitrogen precursor. In some embodiments related semiconductor device structures may include a semiconductor body and an electrode comprising a transition metal niobium nitride disposed over the semiconductor body.
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公开(公告)号:US20180158688A1
公开(公告)日:2018-06-07
申请号:US15795056
申请日:2017-10-26
Applicant: ASM IP Holding B.V.
Inventor: Jerry Peijun Chen , Fred Alokozai
IPC: H01L21/285 , H01L21/28 , H01L49/02 , H01L21/768 , H01L29/49 , H01L27/108 , H01L23/532
CPC classification number: H01L21/28568 , H01L21/28088 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76847 , H01L21/76849 , H01L23/53209 , H01L23/53238 , H01L23/53266 , H01L27/108 , H01L27/10852 , H01L28/60 , H01L28/90 , H01L29/4966
Abstract: Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures are provided. In some embodiments methods may include contacting a substrate with a first reactant comprising a transition metal precursor, contacting the substrate with a second reactant comprising a niobium precursor and contacting the substrate with a third reactant comprising a nitrogen precursor. In some embodiments related semiconductor device structures may include a semiconductor body and an electrode comprising a transition metal niobium nitride disposed over the semiconductor body.
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