公开(公告)号：US20190221433A1

公开(公告)日：2019-07-18

申请号：US16242829

申请日：2019-01-08

Applicant: ASM IP Holding B.V.

Inventor： Petri Raisanen ,  Mark Olstad ,  Jose Alexandro Romero ,  Dong Li ,  Ward Johnson ,  Peijun Chen

IPC: H01L21/285 ,  H01L29/49 ,  H01L21/28 ,  C23C16/32 ,  C23C16/455

CPC classification number: H01L21/28556 ,  C23C16/32 ,  C23C16/45527 ,  C23C16/45553 ,  H01L21/28088 ,  H01L29/4966

Abstract: A method of depositing a material film on a substrate within a reaction chamber by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant and purging the reaction chamber with a first main purge. The method also includes: contacting the substrate with a second vapor phase reactant by two or more micro pulsing processes, wherein each micro pulsing process comprises: contacting the substrate with a micro pulse of a second vapor phase reactant; and purging the reaction chamber with a micro purge, wherein each of the micro pulses of the second vapor phase reactant provides a substantially constant concentration of the second vapor phase reactant into the reaction chamber. The method may also include; purging the reaction chamber with a second main purge. Device structures including a material film deposited by the methods of the disclosure are also disclosed.

公开(公告)号：US20210066084A1

公开(公告)日：2021-03-04

申请号：US17097275

申请日：2020-11-13

Applicant: ASM IP Holding B.V.

Inventor： Petri Raisanen ,  Mark Olstad ,  Jose Alexandro Romero ,  Dong Li ,  Ward Johnson ,  Peijun Chen

IPC: H01L21/285 ,  H01L29/49 ,  C23C16/455 ,  C23C16/32 ,  H01L21/28

Abstract: A method of depositing a material film on a substrate within a reaction chamber by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant and purging the reaction chamber with a first main purge. The method also includes: contacting the substrate with a second vapor phase reactant by two or more micro pulsing processes, wherein each micro pulsing process comprises: contacting the substrate with a micro pulse of a second vapor phase reactant; and purging the reaction chamber with a micro purge, wherein each of the micro pulses of the second vapor phase reactant provides a substantially constant concentration of the second vapor phase reactant into the reaction chamber. The method may also include; purging the reaction chamber with a second main purge. Device structures including a material film deposited by the methods of the disclosure are also disclosed.

公开(公告)号：US11501973B2

公开(公告)日：2022-11-15

申请号：US17097275

申请日：2020-11-13

Applicant: ASM IP Holding B.V.

Inventor： Petri Raisanen ,  Mark Olstad ,  Jose Alexandro Romero ,  Dong Li ,  Ward Johnson ,  Peijun Chen

IPC: H01L21/285 ,  H01L29/49 ,  C23C16/455 ,  C23C16/32 ,  H01L21/28 ,  H01L29/78

Abstract: A method of depositing a material film on a substrate within a reaction chamber by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant and purging the reaction chamber with a first main purge. The method also includes: contacting the substrate with a second vapor phase reactant by two or more micro pulsing processes, wherein each micro pulsing process comprises: contacting the substrate with a micro pulse of a second vapor phase reactant; and purging the reaction chamber with a micro purge, wherein each of the micro pulses of the second vapor phase reactant provides a substantially constant concentration of the second vapor phase reactant into the reaction chamber. The method may also include; purging the reaction chamber with a second main purge. Device structures including a material film deposited by the methods of the disclosure are also disclosed.