公开(公告)号：US20140202382A1

公开(公告)日：2014-07-24

申请号：US14157626

申请日：2014-01-17

Applicant: ASM IP Holding B.V.

Inventor： Young-Jae KIM ,  Ki Jong Kim ,  Dong-Rak Jung ,  Hak Yong Kwon ,  Seung Woo Choi

IPC: C23C16/458

CPC classification number: C23C16/4401 ,  C23C16/4586 ,  H01L21/68742

Abstract: A deposition apparatus is provided to eliminate unnecessary empty spaces that may form between a substrate and a substrate supporting pin, which may be formed within a substrate supporting pin hole, by covering the substrate supporting pin, inserted into the substrate supporting pin hole formed in the substrate support, by a substrate supporting pin cover loaded on the substrate support. Accordingly, the temperature under the substrate can be maintained constant, and generation of parasitic plasma or contaminating particles can be avoided.

Abstract translation: 提供一种沉积装置，用于通过覆盖插入基板支撑销中形成的基板支撑销孔中的基板和基板支撑销之间形成的不必要的空白空间，该基板可以形成在基板支撑销孔内。 基板支撑，由衬底支撑销盖装载在基板支撑上。 因此，衬底下的温度可以保持恒定，并且可以避免寄生等离子体或污染颗粒的产生。

公开(公告)号：US09085825B2

公开(公告)日：2015-07-21

申请号：US14020988

申请日：2013-09-09

Applicant: ASM IP Holding B.V.

Inventor： Ki Jong Kim

IPC: H05H1/24 ,  C23C16/50

CPC classification number: C23C16/50

Abstract: A deposition apparatus and a method of depositing a thin film using the same are provided. By maintaining pressure of an external chamber between a reaction space and an outer wall slightly lower than pressure of the reaction space by supplying a charge gas to an external chamber of a space between the reaction space and an outer wall, parasitic plasma can be prevented from being generated within the external chamber. When loading or unloading a substrate, a charge gas of the external chamber can be prevented from flowing backward to the reaction space, and by supplying nitrogen gas as a charge gas, even if high plasma power is supplied, parasitic plasma can be effectively prevented from being generated in the external chamber.

Abstract translation: 提供了沉积设备和使用其沉积薄膜的方法。 通过向反应空间与外壁之间的空间的外部室供给充电气体，通过保持反应空间和略微低于反应空间压力的外壁之间的外部室的压力，可以防止寄生等离子体 在外部室内产生。 当加载或卸载基板时，即使提供高等离子体电力，也可以防止外部室的充电气体向后流向反应空间，并且通过供给氮气作为充电气体，可以有效地防止寄生等离子体 在外部室产生。