公开(公告)号：US20240186139A1

公开(公告)日：2024-06-06

申请号：US18524307

申请日：2023-11-30

Applicant: ASM IP Holding B.V.

Inventor： Sungdae Woo ,  Kwangman Ko ,  SungBae Kim ,  JuSeok Jeon

IPC: H01L21/02 ,  C23C16/24 ,  C23C16/26 ,  C23C16/34 ,  C23C16/505 ,  C23C16/56 ,  H01J37/32

CPC classification number: H01L21/0234 ,  C23C16/24 ,  C23C16/26 ,  C23C16/34 ,  C23C16/505 ,  C23C16/56 ,  H01J37/32449 ,  H01L21/02186 ,  H01L21/02274 ,  H01L21/0228 ,  H01J37/32082 ,  H01J2237/332

Abstract: Provided is a method of forming a TiN spacer film on the patterned structure comprising a step of loading a substrate onto a chamber, a step of forming a film on the substrate; a step of post treatment to the film; and a step of unloading the substrate, wherein the step of forming the film on the substrate comprises supplying a first gas and a second gas sequentially and alternately, wherein the step of post treating to the film comprises supplying treatment gas to the substrate, wherein the second gas and the treatment gas are activated by RF power.