公开(公告)号：US20220352006A1

公开(公告)日：2022-11-03

申请号：US17730967

申请日：2022-04-27

申请人： ASM IP Holding B.V.

发明人： Shujin Huang ,  Junwei Su ,  Xing Lin ,  Alexandros Demos ,  Rutvij Naik ,  Wentao Wang ,  Matthew Goodman ,  Robin Scott ,  Amir Kajbafvala ,  Robinson James ,  Youness Alvandi-Tabrizi ,  Caleb Miskin

IPC分类号： H01L21/687 ,  C23C16/52 ,  C23C16/458

摘要： A susceptor has a circular pocket portion, an annular ledge portion, and an annular rim ledge portion. The circular pocket portion is arranged along a rotation axis and has a perforated surface. The annular ledge portion extends circumferentially about pocket portion and has ledge surface that slopes axially upward from the perforated surface. The rim portion extends circumferentially about the ledge portion and is connected to the pocket portion by the ledge portion of the susceptor. The susceptor has one or more of a tuned pocket, a contact break, a precursor vent, and a purge channel located radially outward of the perforated surface to control deposition of a film onto a substrate supported by the susceptor. Semiconductor processing systems, film deposition methods, and methods of making susceptors are also described.

公开(公告)号：US20220298643A1

公开(公告)日：2022-09-22

申请号：US17697079

申请日：2022-03-17

申请人： ASM IP Holding B.V.

发明人： Amir Kajbafvala ,  Yanfu Lu ,  Robinson James ,  Caleb Miskin

IPC分类号： C23C16/48 ,  H01L29/66 ,  C23C16/52 ,  G01K7/10 ,  G01J5/00 ,  C23C16/30 ,  C23C16/24

摘要： A method of forming structure includes providing a substrate in a reaction chamber, forming a first layer overlaying the substrate, and forming a second layer onto the first layer. Temperature of the first layer is controlled during the forming of the first layer using infrared electromagnetic radiation emitted by the first layer. Temperature of the second layer is controlled during the forming of the second layer using infrared electromagnetic radiation emitted by the second layer. Semiconductor device structures and semiconductor processing systems are also described.