公开(公告)号：US11828707B2

公开(公告)日：2023-11-28

申请号：US17157507

申请日：2021-01-25

Applicant: ASM IP Holding B.V.

Inventor： Shiva K. T. Rajavelu Muralidhar ,  Youness Alvandi-Tabrizi ,  John DiSanto ,  Sam Kim

IPC: G01N21/59 ,  G01N21/958 ,  G01B11/02 ,  G01N33/207

CPC classification number: G01N21/59 ,  G01B11/028 ,  G01N21/958 ,  G01N33/207 ,  G01N2201/021

Abstract: Methods and apparatus for measuring light intensity are disclosed. The methods and apparatus can be used to verify an article, such as a reaction chamber. Exemplary apparatus include a first arm, a light source coupled to the first arm, a second arm, and a sensor coupled to the second arm. The sensor can receive light from the light source that is transmitted through at least a portion of the article.

公开(公告)号：US20220352006A1

公开(公告)日：2022-11-03

申请号：US17730967

申请日：2022-04-27

Applicant: ASM IP Holding B.V.

Inventor： Shujin Huang ,  Junwei Su ,  Xing Lin ,  Alexandros Demos ,  Rutvij Naik ,  Wentao Wang ,  Matthew Goodman ,  Robin Scott ,  Amir Kajbafvala ,  Robinson James ,  Youness Alvandi-Tabrizi ,  Caleb Miskin

IPC: H01L21/687 ,  C23C16/52 ,  C23C16/458

Abstract: A susceptor has a circular pocket portion, an annular ledge portion, and an annular rim ledge portion. The circular pocket portion is arranged along a rotation axis and has a perforated surface. The annular ledge portion extends circumferentially about pocket portion and has ledge surface that slopes axially upward from the perforated surface. The rim portion extends circumferentially about the ledge portion and is connected to the pocket portion by the ledge portion of the susceptor. The susceptor has one or more of a tuned pocket, a contact break, a precursor vent, and a purge channel located radially outward of the perforated surface to control deposition of a film onto a substrate supported by the susceptor. Semiconductor processing systems, film deposition methods, and methods of making susceptors are also described.

公开(公告)号：US20210239614A1

公开(公告)日：2021-08-05

申请号：US17157507

申请日：2021-01-25

Applicant: ASM IP Holding B.V.

Inventor： Shiva K.T. Rajavelu Muralidhar ,  Youness Alvandi-Tabrizi ,  John DiSanto ,  Sam Kim

IPC: G01N21/59

Abstract: Methods and apparatus for measuring light intensity are disclosed. The methods and apparatus can be used to verify an article, such as a reaction chamber. Exemplary apparatus include a first arm, a light source coupled to the first arm, a second arm, and a sensor coupled to the second arm. The sensor can receive light from the light source that is transmitted through at least a portion of the article.

公开(公告)号：US20240044792A1

公开(公告)日：2024-02-08

申请号：US18379312

申请日：2023-10-12

Applicant: ASM IP Holding B.V.

Inventor： Shiva K.T. Rajavelu Muralidhar ,  Youness Alvandi-Tabrizi ,  John DiSanto ,  Sam Kim

IPC: G01N21/59 ,  G01N21/958 ,  G01B11/02 ,  G01N33/207

CPC classification number: G01N21/59 ,  G01N21/958 ,  G01B11/028 ,  G01N33/207 ,  G01N2201/021

Abstract: Methods and apparatus for measuring light intensity are disclosed. The methods and apparatus can be used to verify an article, such as a reaction chamber. Exemplary apparatus include a first arm, a light source coupled to the first arm, a second arm, and a sensor coupled to the second arm. The sensor can receive light from the light source that is transmitted through at least a portion of the article.

公开(公告)号：US20210229056A1

公开(公告)日：2021-07-29

申请号：US17154851

申请日：2021-01-21

Applicant: ASM IP HOLDING B.V.

Inventor： Youness Alvandi-Tabrizi ,  John DiSanto ,  Shiva K.T. Rajavelu Muralidhar

IPC: B01J8/06

Abstract: A process chamber comprising can include a curved upper wall extending longitudinally from a first end portion of the reaction chamber to a second end portion of the reaction chamber. The process chamber can include a curved lower wall cooperating with the curved upper wall to at least partially define an internal cavity, the curved lower wall connected to the curved upper wall from the first end portion to the second end portion at a first side of the reaction chamber and at a second side of the reaction chamber. A rail can extend along an exterior surface of the process chamber from the first end portion to the second end portion, the rail disposed at or near a connection between the curved upper wall and the curved lower wall.