公开(公告)号：US20240203727A1

公开(公告)日：2024-06-20

申请号：US18537984

申请日：2023-12-13

Applicant: ASM IP Holding B.V.

Inventor： Tao Xu ,  Viljami Pore

IPC: H01L21/02 ,  C23C16/36 ,  C23C16/455 ,  H01J37/32

CPC classification number: H01L21/02167 ,  C23C16/36 ,  C23C16/45531 ,  C23C16/45536 ,  C23C16/45553 ,  H01J37/32449 ,  H01L21/02274 ,  H01J2237/3321

Abstract: The disclosure relates to methods of depositing a material including silicon, carbon and nitrogen on a substrate. The methods include providing the substrate in a reaction chamber, providing a material precursor into the reaction chamber in a vapor phase and providing active species generated from plasma into the reaction chamber to form a material including silicon, carbon and nitrogen on the substrate. In the disclosure, the material precursor includes a silicon-containing azole. The disclosure further relates to processing assemblies for the manufacture of semiconductor devices.