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公开(公告)号:US20250137722A1
公开(公告)日:2025-05-01
申请号:US18928383
申请日:2024-10-28
Applicant: ASM IP Holding B.V.
Inventor: Felix Rabinovich , Terry Parde , Gary Urban Keppers , Amin Azimi , Alicia Almeda , Fauhmee Oudeif
Abstract: A chamber body includes a ceramic weldment having an upper wall, a sidewall, and a lower wall. The upper wall is coupled to the sidewall by a sidewall-to-upper wall weld and includes an upper wall rib segment coupled to an upper wall plate by an upper wall rib segment weld. The sidewall is coupled to the lower wall by a sidewall-to-lower wall weld. The lower wall has a lower wall plate portion and a lower wall rib portion extending therefrom both formed from a singular ceramic workpiece using a subtractive manufacturing technique, the lower wall plate portion thereby defining a lower wall unwelded ribbed region including a plurality of lower wall rib segments defined by the lower wall rib portion of the lower wall. Chamber arrangements, semiconductor processing systems, and methods of making ceramic weldments for chamber bodies in chamber arrangement and semiconductor processing systems are also described.
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公开(公告)号:US20250137723A1
公开(公告)日:2025-05-01
申请号:US18928413
申请日:2024-10-28
Applicant: ASM IP Holding B.V.
Inventor: Felix Rabinovich , Terry Parde , Gary Urban Keppers , Amin Azimi , Alicia Almeda , Fauhmee Oudeif , Amir Kajbafvala , Arun Murali , Frederick Aryeetey , Alexandros Demos , Nayna Khosla , Caleb Miskin , Hichem M'Saad , Shivaji Peddeti , Steven Reiter
Abstract: A chamber body includes a ceramic weldment having a lower wall, a sidewall, and an upper wall. The sidewall is coupled to the lower wall by a sidewall-to-lower wall weld and the upper wall is coupled to the sidewall by a sidewall-to-upper wall weld. The upper wall has an upper wall plate portion and an upper wall rib portion extending therefrom formed from a singular quartz workpiece using a subtractive manufacturing technique, the upper wall further having a unwelded ribbed region overlying the lower wall. Chamber arrangements, semiconductor processing systems and related methods of making chamber bodies and depositing material layers onto substrates supported within chamber bodies are also described.
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