公开(公告)号：US20250137723A1

公开(公告)日：2025-05-01

申请号：US18928413

申请日：2024-10-28

Applicant: ASM IP Holding B.V.

Inventor： Felix Rabinovich ,  Terry Parde ,  Gary Urban Keppers ,  Amin Azimi ,  Alicia Almeda ,  Fauhmee Oudeif ,  Amir Kajbafvala ,  Arun Murali ,  Frederick Aryeetey ,  Alexandros Demos ,  Nayna Khosla ,  Caleb Miskin ,  Hichem M'Saad ,  Shivaji Peddeti ,  Steven Reiter

IPC: F27B17/00 ,  B28B11/02 ,  B28D1/02 ,  B28D1/14 ,  B28D1/18

Abstract: A chamber body includes a ceramic weldment having a lower wall, a sidewall, and an upper wall. The sidewall is coupled to the lower wall by a sidewall-to-lower wall weld and the upper wall is coupled to the sidewall by a sidewall-to-upper wall weld. The upper wall has an upper wall plate portion and an upper wall rib portion extending therefrom formed from a singular quartz workpiece using a subtractive manufacturing technique, the upper wall further having a unwelded ribbed region overlying the lower wall. Chamber arrangements, semiconductor processing systems and related methods of making chamber bodies and depositing material layers onto substrates supported within chamber bodies are also described.

公开(公告)号：US20230193475A1

公开(公告)日：2023-06-22

申请号：US18068399

申请日：2022-12-19

Applicant: ASM IP Holding, B.V.

Inventor： Gregory Deye ,  Caleb Miskin ,  Hichem M'Saad ,  Steven Reiter ,  Alexandros Demos ,  Fei Wang

IPC: C23F1/12

CPC classification number: C23F1/12

Abstract: A method of processing a silicon surface includes using a first radical species to remove contamination from the surface and to roughen the surface; and using a second radical species to smooth the roughened surface. Reaction systems for performing such a method, and silicon surfaces prepared using such a method, also are provided.