公开(公告)号：US10551750B2

公开(公告)日：2020-02-04

申请号：US16393055

申请日：2019-04-24

申请人： ASML Netherlands B.V.

发明人： Adam Jan Urbanczyk ,  Hans Van Der Laan ,  Grzegorz Grzela ,  Alberto Da Costa Assafrao ,  Chien-Hung Tseng ,  Jay Jianhui Chen

IPC分类号： G03F7/20 ,  G01N21/47 ,  G01N21/956

摘要： Disclosed is a process monitoring method, and an associated metrology apparatus. The method comprises: obtaining measured target response sequence data relating to a measurement response of a target formed on a substrate by a lithographic process to measurement radiation comprising multiple measurement profiles, wherein the measured target response sequence data describes a variation of the measurement response of the target in response to variations of the measurement profiles; obtaining reference target response sequence data relating to a measurement response of the target as designed to the measurement radiation, wherein the reference target response sequence data describes an optimal measurement response of the target in response to designed measurement profiles without un-designed variation; comparing the measured target response sequence data and the reference target response sequence data; and determining values for variations in stack parameters of the target from the measured target response sequence data based on the comparison.

公开(公告)号：US11300887B2

公开(公告)日：2022-04-12

申请号：US16463057

申请日：2017-11-06

申请人： ASML NETHERLANDS B.V.

发明人： Richard Johannes Franciscus Van Haren ,  Victor Emanuel Calado ,  Leon Paul Van Dijk ,  Roy Werkman ,  Everhardus Cornelis Mos ,  Jochem Sebastiaan Wildenberg ,  Marinus Jochemsen ,  Bijoy Rajasekharan ,  Erik Jensen ,  Adam Jan Urbanczyk

IPC分类号： G03F7/20

摘要： A method to change an etch parameter of a substrate etching process, the method including: making a first measurement of a first metric associated with a structure on a substrate before being etched; making a second measurement of a second metric associated with a structure on a substrate after being etched; and changing the etch parameter based on a difference between the first measurement and the second measurement.