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公开(公告)号：US20180217508A1
公开(公告)日：2018-08-02
申请号：US15874972
申请日：2018-01-19
Applicant: ASML Netherlands B.V.
Inventor： Adam URBANCZYK , Hans Van Der Laan , Grzegorz Grzela , Alberto Da Costa Assafrao , Chien-Hung Tseng , Jay Jianhui Chen
IPC: G03F7/20
CPC classification number: G03F7/70625 , G01N21/47 , G01N2021/95615 , G03F7/70516 , G03F7/70525 , G03F7/70633
Abstract: Disclosed is a process monitoring method, and an associated metrology apparatus. The method comprises: comparing measured target response spectral sequence data relating to the measurement response of actual targets to equivalent reference target response sequence data relating to a measurement response of the targets as designed; and performing a process monitoring action based on the comparison of said measured target response sequence data and reference target response sequence data. The method may also comprise determining stack parameters from the measured target response spectral sequence data and reference target response spectral sequence data.
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公开(公告)号：US10310388B2
公开(公告)日：2019-06-04
申请号：US15874972
申请日：2018-01-19
Applicant: ASML Netherlands B.V.
Inventor： Adam Urbanczyk , Hans Van Der Laan , Grzegorz Grzela , Alberto Da Costa Assafrao , Chien-Hung Tseng , Jay Jianhui Chen
IPC: G03F7/20 , G01N21/47 , G06F7/20 , G01N21/956
Abstract: Disclosed is a process monitoring method, and an associated metrology apparatus. The method comprises: comparing measured target response spectral sequence data relating to the measurement response of actual targets to equivalent reference target response sequence data relating to a measurement response of the targets as designed; and performing a process monitoring action based on the comparison of said measured target response sequence data and reference target response sequence data. The method may also comprise determining stack parameters from the measured target response spectral sequence data and reference target response spectral sequence data.
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公开(公告)号：US20190107785A1
公开(公告)日：2019-04-11
申请号：US16155424
申请日：2018-10-09
Applicant: ASML Netherlands B.V.
Inventor： Narjes JAVAHERI , Mohammadreza Hajiahmadi , Murat Bozkurt , Alberto Da Costa Assafrao , Marc Johannes Noot , Simon Gijsbert Josephus Mathijssen , Jin Lian
Abstract: Disclosed is a method, and associated apparatuses, for measuring a parameter of interest relating to a structure having at least two layers. The method comprises illuminating the structure with measurement radiation and detecting scattered radiation having been scattered by said structure. The scattered radiation comprises normal and complementary higher diffraction orders. A scatterometry model which relates a scattered radiation parameter to at least a parameter of interest and an asymmetry model which relates the scattered radiation parameter to at least one asymmetry parameter are defined, the asymmetry parameter relating to one or more measurement system errors and/or an asymmetry in the target other than a misalignment between the two layers. A combination of the scatterometry model and asymmetry model is used to determine a system of equations, and the system of equations is then solved for the parameter of interest.
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公开(公告)号：US10551750B2
公开(公告)日：2020-02-04
申请号：US16393055
申请日：2019-04-24
Applicant: ASML Netherlands B.V.
Inventor： Adam Jan Urbanczyk , Hans Van Der Laan , Grzegorz Grzela , Alberto Da Costa Assafrao , Chien-Hung Tseng , Jay Jianhui Chen
IPC: G03F7/20 , G01N21/47 , G01N21/956
Abstract: Disclosed is a process monitoring method, and an associated metrology apparatus. The method comprises: obtaining measured target response sequence data relating to a measurement response of a target formed on a substrate by a lithographic process to measurement radiation comprising multiple measurement profiles, wherein the measured target response sequence data describes a variation of the measurement response of the target in response to variations of the measurement profiles; obtaining reference target response sequence data relating to a measurement response of the target as designed to the measurement radiation, wherein the reference target response sequence data describes an optimal measurement response of the target in response to designed measurement profiles without un-designed variation; comparing the measured target response sequence data and the reference target response sequence data; and determining values for variations in stack parameters of the target from the measured target response sequence data based on the comparison.
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公开(公告)号：US20190072496A1
公开(公告)日：2019-03-07
申请号：US16114629
申请日：2018-08-28
Applicant: ASML Netherlands B.V.
IPC: G01N21/88 , G01N21/956 , G03F7/20 , G01N21/47
Abstract: Multilayered product structures are formed on substrates by a combination of patterning steps, physical processing steps and chemical processing steps. An inspection apparatus illuminates a plurality of target structures and captures pupil images representing the angular distribution of radiation scattered by each target structure. The target structures have the same design but are formed at different locations on a substrate and/or on different substrates. Based on a comparison of the images the inspection apparatus infers the presence of process-induced stack variations between the different locations. In one application, the inspection apparatus separately measures overlay performance of the manufacturing process based on dark-field images, combined with previously determined calibration information. The calibration is adjusted for each target, depending on the stack variations inferred from the pupil images.
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Patent Agency Ranking
公开(公告)号：US11022892B2
公开(公告)日：2021-06-01
申请号：US16669317
申请日：2019-10-30
Applicant: ASML Netherlands B.V.
Inventor： Patrick Warnaar , Simon Philip Spencer Hastings , Alberto Da Costa Assafrao , Lukasz Jerzy Macht
Abstract: An inspection apparatus (140) measures asymmetry or other property of target structures (T) formed by a lithographic process on a substrate. For a given set of illumination conditions, accuracy of said measurement is influenced strongly by process variations across the substrate and/or between substrates. The apparatus is arranged to collect radiation scattered by a plurality of structures under two or more variants of said illumination conditions (p1−, p1, p1+; λ1−, λ1, λ1+). A processing system (PU) is arranged to derive the measurement of said property using radiation collected under a different selection or combination of said variants for different ones of said structures. The variants may be for example in wavelength, or in angular distribution, or in any characteristic of the illumination conditions. Selection and/or combination of variants is made with reference to a signal quality (302, Q, A) observed in the different variants.
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公开(公告)号：US10466594B2
公开(公告)日：2019-11-05
申请号：US15438364
申请日：2017-02-21
Applicant: ASML Netherlands B.V.
Inventor： Patrick Warnaar , Simon Philip Spencer Hastings , Alberto Da Costa Assafrao , Lukasz Jerzy Macht
Abstract: An inspection apparatus (140) measures asymmetry or other property of target structures (T) formed by a lithographic process on a substrate. For a given set of illumination conditions, accuracy of said measurement is influenced strongly by process variations across the substrate and/or between substrates. The apparatus is arranged to collect radiation scattered by a plurality of structures under two or more variants of said illumination conditions (p1−, p1, p1+; λ1−, λ1, λ1+). A processing system (PU) is arranged to derive the measurement of said property using radiation collected under a different selection or combination of said variants for different ones of said structures. The variants may be for example in wavelength, or in angular distribution, or in any characteristic of the illumination conditions. Selection and/or combination of variants is made with reference to a signal quality (302, Q, A) observed in the different variants.
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公开(公告)号：US11698346B2
公开(公告)日：2023-07-11
申请号：US16114629
申请日：2018-08-28
Applicant: ASML NETHERLANDS B.V.
CPC classification number: G01N21/8806 , G01N21/4788 , G01N21/9501 , G01N21/95607 , G03F7/705 , G03F7/7065 , G03F7/70525 , G03F7/70616 , G03F7/70633 , H01L22/12
Abstract: Multilayered product structures are formed on substrates by a combination of patterning steps, physical processing steps and chemical processing steps. An inspection apparatus illuminates a plurality of target structures and captures pupil images representing the angular distribution of radiation scattered by each target structure. The target structures have the same design but are formed at different locations on a substrate and/or on different substrates. Based on a comparison of the images the inspection apparatus infers the presence of process-induced stack variations between the different locations. In one application, the inspection apparatus separately measures overlay performance of the manufacturing process based on dark-field images, combined with previously determined calibration information. The calibration is adjusted for each target, depending on the stack variations inferred from the pupil images.
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公开(公告)号：US11009345B2
公开(公告)日：2021-05-18
申请号：US16418235
申请日：2019-05-21
Applicant: ASML Netherlands B.V.
Inventor： Alberto Da Costa Assafrao , Mohammadreza Hajiahmadi
Abstract: Disclosed is a method of, and associated metrology apparatus for, determining a characteristic of a target on a substrate. The method comprises obtaining a plurality of intensity asymmetry measurements, each intensity asymmetry measurement relating to a target formed on the substrate and determining a sensitivity coefficient corresponding to each target, from the plurality of intensity asymmetry measurements. Using these sensitivity coefficients a representative sensitivity coefficient is determined for said plurality of targets or a subset greater than one thereof. The characteristic of the target can then be determined using the representative sensitivity coefficient.
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公开(公告)号：US10705437B2
公开(公告)日：2020-07-07
申请号：US16155424
申请日：2018-10-09
Applicant: ASML Netherlands B.V.
Inventor： Narjes Javaheri , Mohammadreza Hajiahmadi , Murat Bozkurt , Alberto Da Costa Assafrao , Marc Johannes Noot , Simon Gijsbert Josephus Mathijssen , Jin Lian
IPC: G03F7/20 , G01N21/47 , G01B11/24 , G01B11/30 , H01L23/544
Abstract: Disclosed is a method, and associated apparatuses, for measuring a parameter of interest relating to a structure having at least two layers. The method comprises illuminating the structure with measurement radiation and detecting scattered radiation having been scattered by said structure. The scattered radiation comprises normal and complementary higher diffraction orders. A scatterometry model which relates a scattered radiation parameter to at least a parameter of interest and an asymmetry model which relates the scattered radiation parameter to at least one asymmetry parameter are defined, the asymmetry parameter relating to one or more measurement system errors and/or an asymmetry in the target other than a misalignment between the two layers. A combination of the scatterometry model and asymmetry model is used to determine a system of equations, and the system of equations is then solved for the parameter of interest.
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