公开(公告)号：US20220100079A1

公开(公告)日：2022-03-31

申请号：US17418102

申请日：2019-11-18

Applicant: ASML NETHERLANDS B.V.

Inventor： Quan ZHANG ,  Yong-Ju CHO ,  Zhangnan ZHU ,  Boyang HUANG ,  Been-Der CHEN

IPC: G03F1/36 ,  G03F1/44 ,  G03F1/70 ,  G03F7/20

Abstract: A method for generating a mask pattern to be employed in a patterning process. The method including obtaining (i) a first feature patch including a first polygon portion of an initial mask pattern, and (ii) a second feature patch including a second polygon portion of the initial mask pattern; adjusting the second polygon portion at a patch boundary between the first feature patch and the second feature patch such that a difference between the first polygon portion and the second polygon portion at the patch boundary is reduced; and combining the first polygon portion and the adjusted second polygon portion at the patch boundary to form the mask pattern.