公开(公告)号：US20240119582A1

公开(公告)日：2024-04-11

申请号：US18276018

申请日：2022-01-31

Applicant: ASML NETHERLANDS B.V.

Inventor： Quan ZHANG ,  Been-Der CHEN ,  Wei-chun Fong ,  Zhangnan ZHU ,  Robert Elliott BOONE

IPC: G06T7/00 ,  G03F1/36

CPC classification number: G06T7/001 ,  G03F1/36 ,  G06T2207/20081 ,  G06T2207/20212 ,  G06T2207/30148

Abstract: Described are embodiments for generating a post-optical proximity correction (OPC) result for a mask using a target pattern and reference layer patterns. Images of the target pattern and reference layers are provided as an input to a machine learning (ML) model to generate a post-OPC image. The images may be input separately or combined into a composite image (e.g., using a linear function) and input to the ML model. The images are rendered from pattern data. For example, a target pattern image is rendered from a target pattern to be printed on a substrate, and a reference layer image such as dummy pattern image is rendered from dummy pattern. The ML model is trained to generate the post-OPC image using multiple images associated with target patterns and reference layers, and using a reference post-OPC image of the target pattern. The post-OPC image may be used to generate a post-OPC mask.

公开(公告)号：US20220100079A1

公开(公告)日：2022-03-31

申请号：US17418102

申请日：2019-11-18

Applicant: ASML NETHERLANDS B.V.

Inventor： Quan ZHANG ,  Yong-Ju CHO ,  Zhangnan ZHU ,  Boyang HUANG ,  Been-Der CHEN

IPC: G03F1/36 ,  G03F1/44 ,  G03F1/70 ,  G03F7/20

Abstract: A method for generating a mask pattern to be employed in a patterning process. The method including obtaining (i) a first feature patch including a first polygon portion of an initial mask pattern, and (ii) a second feature patch including a second polygon portion of the initial mask pattern; adjusting the second polygon portion at a patch boundary between the first feature patch and the second feature patch such that a difference between the first polygon portion and the second polygon portion at the patch boundary is reduced; and combining the first polygon portion and the adjusted second polygon portion at the patch boundary to form the mask pattern.