公开(公告)号：US10990020B2

公开(公告)日：2021-04-27

申请号：US15964643

申请日：2018-04-27

Applicant: ASML NETHERLANDS B.V.

Inventor： Narjes Javaheri ,  Mohammadreza Hajiahmadi ,  Olger Victor Zwier ,  Gonzalo Roberto Sanguinetti

IPC: G03F7/20 ,  G01M11/02 ,  G01M11/00

Abstract: A method of determining a patterning process parameter from a metrology target, the method including: obtaining a plurality of values of diffraction radiation from the metrology target, each value of the plurality of values corresponding to a different illumination condition of a plurality of illumination conditions of illumination radiation for the target; and using the combination of values to determine a same value of the patterning process parameter for the target.

公开(公告)号：US11982946B2

公开(公告)日：2024-05-14

申请号：US17628668

申请日：2020-07-06

Applicant: ASML NETHERLANDS B.V. ,  ASML HOLDING N.V.

Inventor： Nikhil Mehta ,  Maurits Van Der Schaar ,  Markus Gerardus Martinus Maria Van Kraaij ,  Hugo Augustinus Joseph Cramer ,  Olger Victor Zwier ,  Jeroen Cottaar ,  Patrick Warnaar

IPC: G03F7/20 ,  G01N21/956 ,  G03F1/84 ,  G03F7/00

CPC classification number: G03F7/70625 ,  G01N21/956 ,  G03F1/84 ,  G03F7/70633

Abstract: A patterning device for patterning product structures onto a substrate and an associated substrate patterned using such a patterning device. The patterning device includes target patterning elements for patterning at least one target from which a parameter of interest can be inferred. The patterning device includes product patterning elements for patterning the product structures. The target patterning elements and product patterning elements are configured such that the at least one target has at least one boundary which is neither parallel nor perpendicular with respect to the product structures on the substrate.

公开(公告)号：US11448974B2

公开(公告)日：2022-09-20

申请号：US17207936

申请日：2021-03-22

Applicant: ASML NETHERLANDS B.V.

Inventor： Narjes Javaheri ,  Mohammadreza Hajiahmadi ,  Olger Victor Zwier ,  Gonzalo Roberto Sanguinetti

IPC: G03F7/20 ,  G01M11/02 ,  G01M11/00

Abstract: A method of determining a patterning process parameter from a metrology target, the method including: obtaining a plurality of values of diffraction radiation from the metrology target, each value of the plurality of values corresponding to a different illumination condition of a plurality of illumination conditions of illumination radiation for the target; and using the combination of values to determine a same value of the patterning process parameter for the target.

公开(公告)号：US12019377B2

公开(公告)日：2024-06-25

申请号：US17299531

申请日：2019-12-04

Applicant: ASML Netherlands B.V.

Inventor： Maurits Van Der Schaar ,  Olger Victor Zwier ,  Patrick Warnaar

IPC: G03F7/00 ,  G01N21/47

CPC classification number: G03F7/70633 ,  G01N21/4788 ,  G03F7/70683

Abstract: A target for determining a performance parameter of a lithographic process, the target comprising a first sub-target formed by at least two overlapping gratings, wherein the underlying grating of the first sub-target has a first pitch and the top lying grating of the first sub-target has a second pitch, at least a second sub-target formed by at least two overlapping gratings, wherein the underlying grating of the second sub-target has a third pitch and the top lying grating of the second sub-target has a fourth pitch.

公开(公告)号：US12013647B2

公开(公告)日：2024-06-18

申请号：US17419648

申请日：2019-12-24

Applicant: ASML Netherlands B.V.

Inventor： Simon Gijsbert Josephus Mathijssen ,  Marc Johannes Noot ,  Kaustuve Bhattacharyya ,  Arie Jeffrey Den Boef ,  Grzegorz Grzela ,  Timothy Dugan Davis ,  Olger Victor Zwier ,  Ralph Timotheus Huijgen ,  Peter David Engblom ,  Jan-Willem Gemmink

IPC: G03F7/00 ,  G01N21/47 ,  G06T7/00

CPC classification number: G03F7/70633 ,  G01N21/47 ,  G06T7/0004 ,  G01N2021/4735 ,  G06T2207/30148

Abstract: A method provides the steps of receiving an image from a metrology tool, determining individual units of said image and discriminating the units which provide accurate metrology values. The images are obtained by measuring the metrology target at multiple wavelengths. The discrimination between the units, when these units are pixels in said image, is based on calculating a degree of similarity between said units.

公开(公告)号：US10996570B2

公开(公告)日：2021-05-04

申请号：US16594613

申请日：2019-10-07

Applicant: ASML Netherlands B.V.

Inventor： Zili Zhou ,  Nitesh Pandey ,  Olger Victor Zwier ,  Patrick Warnaar ,  Maurits Van Der Schaar ,  Elliott Gerard McNamara ,  Arie Jeffrey Den Boef ,  Paul Christiaan Hinnen ,  Murat Bozkurt ,  Joost Jeroen Ottens ,  Kaustuve Bhattacharyya ,  Michael Kubis

IPC: G03F7/20 ,  G01N21/47 ,  G01N21/95 ,  G01N21/956 ,  G03F9/00

Abstract: A method of measuring overlay uses a plurality of asymmetry measurements from locations (LOI) on a pair of sub-targets (1032, 1034) formed on a substrate (W). For each sub-target, the plurality of asymmetry measurements are fitted to at least one expected relationship (1502, 1504) between asymmetry and overlay, based on a known bias variation deigned into the sub-targets. Continuous bias variation in one example is provided by varying the pitch of top and bottom gratings (P1/P2). Bias variations between the sub-targets of the pair are equal and opposite (P2/P1). Overlay (OV) is calculated based on a relative shift (xs) between the fitted relationships for the two sub-targets. The step of fitting asymmetry measurements to at least one expected relationship includes wholly or partially discounting measurements (1506, 1508, 1510) that deviate from the expected relationship and/or fall outside a particular segment of the fitted relationship.

公开(公告)号：US12242203B2

公开(公告)日：2025-03-04

申请号：US18001255

申请日：2021-06-08

Applicant: ASML Netherlands B.V.

Inventor： Maurits Van Der Schaar ,  Patrick Warnaar ,  Franciscus Godefridus Casper Bijnen ,  Olger Victor Zwier

IPC: G03F7/00

Abstract: Disclosed is target arrangement comprising a first target region having at least a first pitch and at least a second pitch a second target region having at least a third pitch, wherein a portion of the first target region having a second pitch overlaps with a portion of the second target region.

公开(公告)号：US11385553B2

公开(公告)日：2022-07-12

申请号：US17306670

申请日：2021-05-03

Applicant: ASML Netherlands B.V.

Inventor： Zili Zhou ,  Nitesh Pandey ,  Olger Victor Zwier ,  Patrick Warnaar ,  Maurits Van Der Schaar ,  Elliott Gerard McNamara ,  Arie Jeffrey Den Boef ,  Paul Christiaan Hinnen ,  Murat Bozkurt ,  Joost Jeroen Ottens ,  Kaustuve Bhattacharyya ,  Michael Kubis

IPC: G03F7/20 ,  G01N21/47 ,  G01N21/95 ,  G01N21/956 ,  G03F9/00

Abstract: A method of measuring overlay uses a plurality of asymmetry measurements from locations (LOI) on a pair of sub-targets (1032, 1034) formed on a substrate (W). For each sub-target, the plurality of asymmetry measurements are fitted to at least one expected relationship (1502, 1504) between asymmetry and overlay, based on a known bias variation deigned into the sub-targets. Continuous bias variation in one example is provided by varying the pitch of top and bottom gratings (P1/P2). Bias variations between the sub-targets of the pair are equal and opposite (P2/P1). Overlay (OV) is calculated based on a relative shift (xs) between the fitted relationships for the two sub-targets. The step of fitting asymmetry measurements to at least one expected relationship includes wholly or partially discounting measurements (1506, 1508, 1510) that deviate from the expected relationship and/or fall outside a particular segment of the fitted relationship.

公开(公告)号：US10606178B2

公开(公告)日：2020-03-31

申请号：US16246004

申请日：2019-01-11

Applicant: ASML Netherlands B.V.

Inventor： Olger Victor Zwier

IPC: G03F7/20 ,  G03F9/00

Abstract: Disclosed is a method of measuring a target, and a metrology apparatus. In one arrangement the target comprises a layered structure. The layered structure has a first target structure in a first layer and a second target structure in a second layer. The method comprises illuminating the target with measurement radiation using an illumination profile in the illumination pupil (u) that is offset from an imaginary line (IL) in the illumination pupil passing through the optical axis, to allow propagation to a detection region of the detection pupil of an allowed order (v2, v4) of a predetermined diffraction order while limiting propagation to the detection region of an equal and opposite order (v1′, v3′) of that predetermined diffraction order. Scattered radiation of plural double-diffracted allowed diffraction orders (w2, w4) is detected. A characteristic of the lithographic process is calculated using the detected scattered radiation of the predetermined diffraction orders.