-
公开(公告)号:US10585354B2
公开(公告)日:2020-03-10
申请号:US16256359
申请日:2019-01-24
Applicant: ASML NETHERLANDS B.V.
Inventor: Anagnostis Tsiatmas , Joannes Jitse Venselaar , Samee Ur Rehman , Mariya Vyacheslavivna Medvedyeva , Bastiaan Onne Fagginger Auer , Martijn Maria Zaal , Thaleia Kontoroupi
IPC: G03F7/20
Abstract: Methods of optimizing a metrology process are disclosed. In one arrangement, measurement data from a plurality of applications of the metrology process to a first target on a substrate are obtained. Each application of the metrology process includes illuminating the first target with a radiation spot and detecting radiation redirected by the first target. The applications of the metrology process include applications at a) plural positions of the radiation spot relative to the first target, and/or b) plural focus heights of the radiation spot. The measurement data includes, for each application of the metrology process, a detected pupil representation of an optical characteristic of the redirected radiation in a pupil plane. The method includes determining an optimal alignment and/or an optimal focus height based on comparisons between the detected pupil representations in the measurement data and a reference pupil representation.
-
公开(公告)号:US11604419B2
公开(公告)日:2023-03-14
申请号:US17241142
申请日:2021-04-27
Applicant: ASML NETHERLANDS B.V.
Inventor: Joannes Jitse Venselaar , Anagnostis Tsiatmas , Samee Ur Rehman , Paul Christiaan Hinnen , Jean-Pierre Agnes Henricus Marie Vaessen , Nicolas Mauricio Weiss , Gonzalo Roberto Sanguinetti , Thomai Zacharopoulou , Martijn Maria Zaal
Abstract: Methods of determining information about a patterning process. In a method, measurement data from a metrology process applied to each of a plurality of metrology targets on a substrate is obtained. The measurement data for each metrology target includes at least a first contribution and a second contribution. The first contribution is from a parameter of interest of a patterning process used to form the metrology target. The second contribution is from an error in the metrology process. The method further includes using the obtained measurement data from all of the plurality of metrology targets to obtain information about an error in the metrology process, and using the obtained information about the error in the metrology process to extract a value of the parameter of interest for each metrology target.
-
3.
公开(公告)号:US10585048B2
公开(公告)日:2020-03-10
申请号:US16385651
申请日:2019-04-16
Applicant: ASML NETHERLANDS B.V.
Inventor: Samee Ur Rehman , Anagnostis Tsiatmas , Sergey Tarabrin , Joannes Jitse Venselaar , Alexandru Onose , Mariya Vyacheslavivna Medvedyeva
IPC: G03F7/20 , G01N21/95 , G01N21/956 , G03F9/00
Abstract: Methods of determining a value of a parameter of interest are disclosed. In one arrangement, a symmetric component and an asymmetric component of a detected pupil representation from illuminating a target are derived. A first metric characterizing the symmetric component and a second metric characterizing the asymmetric component vary non-monotonically as a function of the parameter of interest over a reference range of values of the parameter of interest. A combination of the derived symmetric component and the derived asymmetric component are used to identify a correct value from a plurality of candidate values of the parameter of interest.
-
公开(公告)号:US11022897B2
公开(公告)日:2021-06-01
申请号:US16194769
申请日:2018-11-19
Applicant: ASML NETHERLANDS B.V.
Inventor: Joannes Jitse Venselaar , Anagnostis Tsiatmas , Samee Ur Rehman , Paul Christiaan Hinnen , Jean-Pierre Agnes Henricus Marie Vaessen , Nicolas Mauricio Weiss , Gonzalo Roberto Sanguinetti , Thomai Zacharopoulou , Martijn Maria Zaal
Abstract: Methods of determining information about a patterning process. In a method, measurement data from a metrology process applied to each of a plurality of metrology targets on a substrate is obtained. The measurement data for each metrology target includes at least a first contribution and a second contribution. The first contribution is from a parameter of interest of a patterning process used to form the metrology target. The second contribution is from an error in the metrology process. The method further includes using the obtained measurement data from all of the plurality of metrology targets to obtain information about an error in the metrology process, and using the obtained information about the error in the metrology process to extract a value of the parameter of interest for each metrology target.
-
公开(公告)号:US20190243253A1
公开(公告)日:2019-08-08
申请号:US16256359
申请日:2019-01-24
Applicant: ASML NETHERLANDS B.V.
Inventor: Anagnostis TSIATMAS , Joannes Jitse Venselaar , Samee Ur Rehman , Mariya Vyacheslavivna Medvedyeva , Bastiaan Onne Fagginger Auer , Martijn Maria Zaal , Thaleia Kontoroupi
IPC: G03F7/20
CPC classification number: G03F7/70091 , G03F7/705 , G03F7/70508 , G03F7/70633 , G03F7/70641
Abstract: Methods of optimizing a metrology process are disclosed. In one arrangement, measurement data from a plurality of applications of the metrology process to a first target on a substrate are obtained. Each application of the metrology process includes illuminating the first target with a radiation spot and detecting radiation redirected by the first target. The applications of the metrology process include applications at a) plural positions of the radiation spot relative to the first target, and/or b) plural focus heights of the radiation spot. The measurement data includes, for each application of the metrology process, a detected pupil representation of an optical characteristic of the redirected radiation in a pupil plane. The method includes determining an optimal alignment and/or an optimal focus height based on comparisons between the detected pupil representations in the measurement data and a reference pupil representation.
-
-
-
-