公开(公告)号：US20220260920A1

公开(公告)日：2022-08-18

申请号：US17612601

申请日：2020-05-11

Applicant: ASML NETHERLANDS B.V.

Inventor： Pieter Gerardus Jacobus SMORENBERG ,  Putra SAPUTRA ,  Khalid ELBATTAY ,  Paul DERWIN ,  Roy WERKMAN ,  Erik JENSEN ,  Hyunwoo YU ,  Gautam SARMA

IPC: G03F7/20

Abstract: A method for determining a sampling scheme, the method including: obtaining a first fingerprint model relating to a first spatial distribution of a performance parameter over a first portion of a semiconductor substrate and a second fingerprint model relating to a second spatial distribution of the performance parameter over a second portion of the semiconductor substrate; and determining a sampling point corresponding to a measuring location on the semiconductor substrate for generating measurement data based on an expected reduction of a first uncertainty metric associated with evaluation of the first fingerprint model over the first portion and an expected reduction of a second uncertainty metric associated with evaluation of the second fingerprint model over the second portion.

公开(公告)号：US20220244649A1

公开(公告)日：2022-08-04

申请号：US17623829

申请日：2020-06-10

Applicant: ASML NETHERLANDS B.V.

Inventor： Pieter Gerardus Jacobus SMORENBERG ,  Putra SAPUTRA ,  Paul DERWIN ,  Khalid ELBATTAY

IPC: G03F7/20

Abstract: A method for determining an intra-field correction for control of a lithographic apparatus configured for exposing a pattern on an exposure field of a substrate, the method includes: obtaining metrology data for use in determining the intra-field correction; determining an accuracy metric indicating a lower accuracy where the metrology data is not reliable and/or where the lithographic apparatus is limited in actuating a potential actuation input which is based on the metrology data; and determining the intra-field correction based at least partially on the accuracy metric.

公开(公告)号：US20220171295A1

公开(公告)日：2022-06-02

申请号：US17441353

申请日：2020-03-05

Applicant: ASML NETHERLANDS B.V.

Inventor： Rowin MEIJERINK ,  Putra SAPUTRA ,  Pieter Gerardus Jacobus SMORENBERG ,  Theo Wilhelmus Maria THIJSSEN ,  Khalid ELBATTAY ,  Ma Su Su HLAING ,  Paul DERWIN ,  BO ZHONG ,  Masaya KOMATSU

IPC: G03F7/20

Abstract: A method for controlling a lithographic apparatus configured to pattern an exposure field on a substrate including at least a sub-field, the method including: obtaining an initial spatial profile associated with a spatial variation of a performance parameter associated with a layer on the substrate across at least the sub-field of the exposure field; and decomposing the initial spatial profile into at least a first component spatial profile for controlling a lithographic apparatus at a first spatial scale and a second component spatial profile for controlling the lithographic apparatus at a second spatial scale associated with a size of the sub-field, wherein the decomposing includes co-optimizing the first and second component spatial profiles based on correcting the spatial variation of the performance parameter across the sub-field.

公开(公告)号：US20240045340A1

公开(公告)日：2024-02-08

申请号：US18242842

申请日：2023-09-06

Applicant: ASML NETHERLANDS B.V.

Inventor： Peter TEN BERGE ,  Steven Erik STEEN ,  Pieter Gerardus Jacobus SMORENBERG ,  Khalid ELBATTAY

IPC: G03F7/00

CPC classification number: G03F7/70525

Abstract: A method for controlling a process of manufacturing semiconductor devices, the method including: obtaining a first control grid associated with a first lithographic apparatus used for a first patterning process for patterning a first substrate; obtaining a second control grid associated with a second lithographic apparatus used for a second patterning process for patterning a second substrate; based on the first control grid and second control grid, determining a common control grid definition for a bonding step for bonding the first substrate and second substrate to obtain a bonded substrate; obtaining bonded substrate metrology data including data relating to metrology performed on the bonded substrate; and determining a correction for performance of the bonding step based on the bonded substrate metrology data, the determining a correction including determining a co-optimized correction for the bonding step and for the first patterning process and/or second patterning process.

公开(公告)号：US20230288817A1

公开(公告)日：2023-09-14

申请号：US18196432

申请日：2023-05-12

Applicant: ASML NETHERLANDS B.V.

Inventor： Rowin MEIJERINK ,  Putra SAPUTRA ,  Pieter Gerardus Jacobus SMORENBERG ,  Theo Wilhelmus Maria THIJSSEN ,  Khalid ELBATTAY ,  Ma Su Su HLAING ,  Paul DERWIN ,  Bo ZHONG ,  Masaya KOMATSU

IPC: G03F7/20

CPC classification number: G03F7/70633 ,  G03F7/70258 ,  G03F7/70725

Abstract: A method for controlling a lithographic apparatus configured to pattern an exposure field on a substrate including at least a sub-field, the method including: obtaining an initial spatial profile associated with a spatial variation of a performance parameter associated with a layer on the substrate across at least the sub-field of the exposure field; and decomposing the initial spatial profile into at least a first component spatial profile for controlling a lithographic apparatus at a first spatial scale and a second component spatial profile for controlling the lithographic apparatus at a second spatial scale associated with a size of the sub-field, wherein the decomposing includes co-optimizing the first and second component spatial profiles based on correcting the spatial variation of the performance parameter across the sub-field.