公开(公告)号：US20210191278A1

公开(公告)日：2021-06-24

申请号：US17197167

申请日：2021-03-10

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo TEL ,  Bart Peter Bert SEGERS ,  Everhardus Cornelis MOS ,  Emil Peter SCHMITT-WEAVER ,  Yichen ZHANG ,  Petrus Gerardus VAN RHEE ,  Xing Lan LIU ,  Maria KILITZIRAKI ,  Reiner Maria JUNGBLUT ,  Hyunwoo YU

IPC: G03F7/20 ,  G06N3/02

Abstract: A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.

公开(公告)号：US20220260925A1

公开(公告)日：2022-08-18

申请号：US17738093

申请日：2022-05-06

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo TEL ,  Bart Peter Bert SEGERS ,  Everhardus Cornelis MOS ,  Emil Peter SCHMITT-WEAVER ,  Yichen ZHANG ,  Petrus Gerardus VAN RHEE ,  Xing Lan LIU ,  Maria KILITZIRAKI ,  Reiner Maria JUNGBLUT ,  Hyunwoo YU

IPC: G03F7/20 ,  G06N3/02

Abstract: A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.

公开(公告)号：US20220260920A1

公开(公告)日：2022-08-18

申请号：US17612601

申请日：2020-05-11

Applicant: ASML NETHERLANDS B.V.

Inventor： Pieter Gerardus Jacobus SMORENBERG ,  Putra SAPUTRA ,  Khalid ELBATTAY ,  Paul DERWIN ,  Roy WERKMAN ,  Erik JENSEN ,  Hyunwoo YU ,  Gautam SARMA

IPC: G03F7/20

Abstract: A method for determining a sampling scheme, the method including: obtaining a first fingerprint model relating to a first spatial distribution of a performance parameter over a first portion of a semiconductor substrate and a second fingerprint model relating to a second spatial distribution of the performance parameter over a second portion of the semiconductor substrate; and determining a sampling point corresponding to a measuring location on the semiconductor substrate for generating measurement data based on an expected reduction of a first uncertainty metric associated with evaluation of the first fingerprint model over the first portion and an expected reduction of a second uncertainty metric associated with evaluation of the second fingerprint model over the second portion.

公开(公告)号：US20200026201A1

公开(公告)日：2020-01-23

申请号：US16495416

申请日：2018-03-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Marc HAUPTMANN ,  Everhardus Cornelis MOS ,  Weitian KOU ,  Alexander YPMA ,  Michiel KUPERS ,  Hyunwoo YU ,  Min-Sub HAN

IPC: G03F7/20 ,  G03F9/00

Abstract: A lithographic process is performed on a set of semiconductor substrates consisting of a plurality of substrates, As part of the process, the set of substrates is partitioned into a number of subsets. The partitioning may be based on a set of characteristics associated with a first layer on the substrates. A fingerprint of a performance parameter is then determined for at least one substrate of the set of substrates. Under some circumstances, the fingerprint is determined for one substrate of each subset of substrates. The fingerprint is associated with at least the first layer. A correction for the performance parameter associated with an application of a subsequent layer is then derived, the derivation being based on the determined fingerprint and the partitioning of the set of substrates.