公开(公告)号：US11221560B2

公开(公告)日：2022-01-11

申请号：US14577966

申请日：2014-12-19

Applicant: ASML NETHERLANDS B.V.

Inventor： Guangqing Chen ,  Wei Liu ,  Maurits Van der Schaar

IPC: G03F7/20 ,  G01B11/30 ,  G01B11/00

Abstract: A method of metrology target design is described. The method includes determining a sensitivity of a parameter of a metrology target design to a perturbation of a process parameter for forming, or measuring the formation of, the metrology target, and determining a robustness of the metrology target design based on the sum of the sensitivity multiplied by the perturbation of at least one of the process parameters.

公开(公告)号：US11428521B2

公开(公告)日：2022-08-30

申请号：US17519641

申请日：2021-11-05

Applicant: ASML NETHERLANDS B.V.

Inventor： Kaustuve Bhattacharyya ,  Henricus Wilhelmus Maria Van Buel ,  Christophe David Fouquet ,  Hendrik Jan Hidde Smilde ,  Maurits Van der Schaar ,  Arie Jeffrey Den Boef ,  Richard Johannes Franciscus Van Haren ,  Xing Lan Liu ,  Johannes Marcus Maria Beltman ,  Andreas Fuchs ,  Omer Abubaker Omer Adam ,  Michael Kubis ,  Martin Jacobus Johan Jak

IPC: G01B11/14 ,  G03F7/20

Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.

公开(公告)号：US11125806B2

公开(公告)日：2021-09-21

申请号：US16527142

申请日：2019-07-31

Applicant: ASML Netherlands B.V.

Inventor： Patricius Aloysius Jacobus Tinnemans ,  Patrick Warnaar ,  Vasco Tomas Tenner ,  Maurits Van der Schaar

IPC: G01R31/265

Abstract: Disclosed is a method for obtaining a computationally determined interference electric field describing scattering of radiation by a pair of structures comprising a first structure and a second structure on a substrate. The method comprises determining a first electric field relating to first radiation scattered by the first structure; determining a second electric field relating to second radiation scattered by the second structure; and computationally determining the interference of the first electric field and second electric field, to obtain a computationally determined interference electric field.