公开(公告)号：US12072620B2

公开(公告)日：2024-08-27

申请号：US17278356

申请日：2019-10-02

Applicant: ASML NETHERLANDS B.V.

Inventor： Pieter-Jan Van Zwol ,  Sander Baltussen ,  Dennis De Graaf ,  Johannes Christiaan Leonardus Franken ,  Adrianus Johannes Maria Giesbers ,  Alexander Ludwig Klein ,  Johan Hendrik Klootwijk ,  Peter Simon Antonius Knapen ,  Evgenia Kurganova ,  Alexey Sergeevich Kuznetsov ,  Arnoud Willem Notenboom ,  Mahdiar Valefi ,  Marcus Adrianus Van de Kerkhof ,  Wilhelmus Theodorus Anthonius Johannes Van den Einden ,  Ties Wouter Van der Woord ,  Hendrikus Jan Wondergem ,  Aleksandar Nikolov Zdravkov

IPC: G03F1/64 ,  G03F7/00

CPC classification number: G03F1/64 ,  G03F7/7015

Abstract: A method for manufacturing a membrane assembly for EUV lithography, the method including: providing a stack including: at least one membrane layer supported by a planar substrate, wherein the planar substrate has an inner region and a border region around the inner region; and a first sacrificial layer between the planar substrate and the membrane layer; selectively removing the inner region of the planar substrate such that the membrane assembly has: a membrane formed from the at least one membrane layer, and a border holding the membrane, the border having the border region of the planar substrate and the first sacrificial layer situated between the border region and the membrane layer, wherein the selectively removing the inner region of the planar substrate includes using an etchant which has a similar etch rate for the membrane layer and its oxide and a substantially different etch rate for the first sacrificial layer.

公开(公告)号：US10222701B2

公开(公告)日：2019-03-05

申请号：US15024815

申请日：2014-09-18

Applicant: ASML Netherlands B.V.

Inventor： Chuangxin Zhao ,  Sander Baltussen ,  Pär Mårten Lukas Broman ,  Richard Joseph Bruls ,  Cristian Bogdan Craus ,  Jan Groenewold ,  Dzmitry Labetski ,  Kerim Nadir ,  Hendrikus Gijsbertus Schimmel ,  Christian Felix Wählisch

IPC: G03B27/42 ,  G03F7/20 ,  H05G2/00

Abstract: A radiation source for a lithographic apparatus, in particular a laser-produced plasma source includes a fan unit surrounding but not obstructing the collected radiation beam that is operated to generate a flow in a buffer gas away from the optical axis. The fan unit can include a plurality of flat or curved blades generally parallel to the optical axis and driven to rotate about the optical axis.

公开(公告)号：US11703768B2

公开(公告)日：2023-07-18

申请号：US17600340

申请日：2020-03-10

Applicant: ASML Netherlands B.V.

Inventor： Alisia Mariska Willems-Peters ,  Sander Baltussen ,  Zhuangxiong Huang ,  Reinier Theodorus Martinus Jilisen ,  Sietse Wijtvliet

IPC: G03F7/20 ,  G03F7/00

CPC classification number: G03F7/70775 ,  G03F7/70916 ,  G03F7/70933

Abstract: An apparatus comprising: a position monitoring system configured to determine the position of the substrate with respect to a projection system configured to project a radiation beam through an opening in the projection system and onto a substrate, wherein a component of the position monitoring system is located beneath the projection system in use; and a baffle disposed between the opening and the component.

公开(公告)号：US20240369920A1

公开(公告)日：2024-11-07

申请号：US18774721

申请日：2024-07-16

Applicant: ASML NETHERLANDS B.V.

Inventor： Pieter-Jan VAN ZWOL ,  Sander Baltussen ,  Dennis De Graaf ,  Johannes Christiaan Leonardus Franken ,  Adrianus Johannes Maria Giesbers ,  Alexander Ludwig Klein ,  Johan Hendrik Klootwijk ,  Peter Simon Antonius Knapen ,  Evgenia Kurganova ,  Alexey Sergeevich Kuznetsov ,  Arnoud Willem Notenboom ,  Mahdiar Valefi ,  Marcus Adrianus Van De Kerkhof ,  Wilhelmus Theodorus Anthonius Johannes Van Den Einden ,  Ties Wouter Van Der Woord ,  Hendrikus Jan Wondergem ,  Aleksandar Nikolov Zdravkov

IPC: G03F1/64 ,  G03F7/00

Abstract: A method for manufacturing a membrane assembly for EUV lithography, the method including: providing a stack including: at least one membrane layer supported by a planar substrate, wherein the planar substrate has an inner region and a border region around the inner region; and a first sacrificial layer between the planar substrate and the membrane layer; selectively removing the inner region of the planar substrate such that the membrane assembly has: a membrane formed from the at least one membrane layer, and a border holding the membrane, the border having the border region of the planar substrate and the first sacrificial layer situated between the border region and the membrane layer, wherein the selectively removing the inner region of the planar substrate includes using an etchant which has a similar etch rate for the membrane layer and its oxide and a substantially different etch rate for the first sacrificial layer.