公开(公告)号：US20240353749A1

公开(公告)日：2024-10-24

申请号：US18713143

申请日：2022-11-23

Applicant: ASML NETHERLANDS B.V.

Inventor： Xingyue PENG ,  Ningning JIA ,  Zhan SHI ,  Rafael C. HOWELL

IPC: G03F1/36

CPC classification number: G03F1/36

Abstract: Methods, software, and systems are disclosed for determining mask patterns. The determination can include obtaining a mask pattern including sub-resolution assist features (SRAFs) each having constant widths. The widths are set as continuous variables and so can be optimized along with other variables during a mask optimization process of the mask pattern. Based on their population and/or statistics, the optimized continuous widths are then discretized to a limited number of global width levels. Further mask optimization be performed with the SRAFs having discretized optimized global width levels, where the width assigned to an individual SRAF may be adjusted to a different level of the global width levels.

公开(公告)号：US20210364929A1

公开(公告)日：2021-11-25

申请号：US16973377

申请日：2019-06-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Duan-Fu Stephen HSU ,  Christoph Rene Konrad Cebulla HENNERKES ,  Rafael C. HOWELL ,  Zhan SHI ,  Xiaoyang Jason LI ,  Frank STAALS

IPC: G03F7/20

Abstract: A method for determining a wavefront parameter of a patterning process. The method includes obtaining a reference performance (e.g., a contour, EPE, CD) of a reference apparatus (e.g., a scanner), a lens model for a patterning apparatus configured to convert a wavefront parameter of a wavefront to actuator movement, and a lens fingerprint of a tuning apparatus (e.g., a to-be-matched scanner). Further, the method involves determining the wavefront parameter (e.g., a wavefront parameter such as tilt, offset, etc.) based on the lens fingerprint of the tuning apparatus, the lens model, and a cost function, wherein the cost function is a difference between the reference performance and a tuning apparatus performance.

公开(公告)号：US20230205096A1

公开(公告)日：2023-06-29

申请号：US17927866

申请日：2021-05-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Xingyue PENG ,  Zhan SHI ,  Duan-Fu Stephen HSU ,  Rafael C. HOWELL ,  Gerui LIU

IPC: G03F7/20

CPC classification number: G03F7/705 ,  G03F7/706 ,  G03F7/70525

Abstract: Scanner aberration impact modeling in a semiconductor manufacturing process, which may facilitate co-optimization of multiple scanners. Scanner aberration impact modeling may include executing a calibrated model and controlling a scanner based on output from the model. The model is configured to receive patterning system aberration data. The model is calibrated with patterning system aberration calibration data and corresponding patterning process impact calibration data. New patterning process impact data may be determined, based on the model, for the received patterning system aberration data. The model includes a hyperdimensional function configured to correlate the received patterning system aberration data with the new patterning process impact data. The hyperdimensional function is configured to correlate the received patterning system aberration data with the new patterning process impact data in an approximation form, in lieu of a full simulation, without involving calculation of an aerial image or a representation thereof.