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公开(公告)号：US20190227446A1
公开(公告)日：2019-07-25
申请号：US16315100
申请日：2017-08-14
Applicant: ASML NETHERLANDS B.V. , ASML HOLDING N.V.
Inventor： Franciscus Godefridus Casper BIJNEN , Simon Gijsbert Josephus MATHIJSSEN , Vassili DEMERGIS , Edo Maria HULSEBOS
IPC: G03F9/00
Abstract: A method of determining the position of an alignment mark on a substrate, the alignment mark having first and second segment, the method including illuminating the alignment mark with radiation, detecting radiation diffracted by the alignment mark and generating a resulting alignment signal. The alignment signal has a first component received during illumination of the first segment only, a second component received during illumination of the second segment only, and a third component received during simultaneous illumination of both segments. The positions of the segments are determined using the first component, the second component and the third component of the alignment signal.
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公开(公告)号：US20210341846A1
公开(公告)日：2021-11-04
申请号：US17377648
申请日：2021-07-16
Applicant: ASML NETHERLANDS B.V.
Inventor： Franciscus Godefridus Casper BIJNEN , Edo Maria HULSEBOS , Henricus Johannes Lambertus MEGENS , Robert John SOCHA , Youping ZHANG
Abstract: A measurement apparatus and method for determining a substrate grid describing a deformation of a substrate prior to exposure of the substrate in a lithographic apparatus configured to fabricate one or more features on the substrate. Position data for a plurality of first features and/or a plurality of second features on the substrate is obtained. Asymmetry data for at least a feature of the plurality of first features and/or the plurality of second features is obtained. The substrate grid based on the position data and the asymmetry data is determined. The substrate grid and asymmetry data are passed to the lithographic apparatus for controlling at least part of an exposure process to fabricate one or more features on the substrate.
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公开(公告)号：US20180284621A1
公开(公告)日：2018-10-04
申请号：US15763780
申请日：2016-09-15
Applicant: ASML NETHERLANDS B.V.
Inventor： Edo Maria HULSEBOS , Patricius Aloysius Jacobus TINNEEMANS , Ralph BRINKHOF , Pieter Jacob HERES , Jorn Kjeld LUCAS , Lock Johannes Petrus VERHEES , Ingrid Margaretha Ardina VAN DONKELAAR , Francicus Godefridus Casper BIJNEN
CPC classification number: G03F7/70633 , G03F7/705 , G03F9/7003
Abstract: In a method of controlling a lithographic apparatus, historical performance measurements are used to calculate a process model relating to a lithographic process. Current positions of a plurality of alignment marks provided on a current substrate are measured and used to calculate a substrate model relating to a current substrate. Additionally, historical position measurements obtained at the time of processing the prior substrates are used with the historical performance measurements to calculate a model mapping. The model mapping is applied to modify the substrate model. The lithographic apparatus is controlled using the process model and the modified substrate model together. Overlay performance is improved by avoiding over- or under-correction of correlated components of the process model and the substrate model. The model mapping may be a subspace mapping, and dimensionality of the model mapping may be reduced, before it is used.
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公开(公告)号：US20240345569A1
公开(公告)日：2024-10-17
申请号：US18674537
申请日：2024-05-24
Applicant: ASML NETHERLANDS B.V.
Inventor： Sarathi ROY , Edo Maria HULSEBOS , Roy WERKMAN , Junru RUAN
IPC: G05B19/418 , G03F7/00 , G05B13/02 , G06N3/044
CPC classification number: G05B19/41875 , G03F7/70508 , G03F7/70525 , G05B13/027 , G05B19/41885 , G06N3/044 , G05B2219/33025 , G05B2219/45028 , G05B2219/45031
Abstract: A method for configuring a semiconductor manufacturing process, the method including: obtaining a first value of a first parameter based on measurements associated with a first operation of a process step in the semiconductor manufacturing process and a first sampling scheme; using a recurrent neural network to determine a predicted value of the first parameter based on the first value; and using the predicted value of the first parameter in configuring a subsequent operation of the process step in the semiconductor manufacturing process.
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公开(公告)号：US20230004097A1
公开(公告)日：2023-01-05
申请号：US17784424
申请日：2020-11-17
Applicant: ASML Netherlands B.V.
IPC: G03F9/00
Abstract: Disclosed is a substrate, associated patterning device and a method for measuring a position of the substrate. The method comprises performing an alignment scan of an alignment mark to obtain simultaneously: a first measurement signal detected in a first measurement channel and a second measurement signal detected in a second measurement channel. The first and second measurement signals are processed by subtracting a first direction component of the first measurement signal from a first direction component of the second measurement signal to obtain a first processed signal, the first direction components relating to said first direction. The position of an alignment mark is determined with respect to the first direction from the first processed signal.
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Patent Agency Ranking
公开(公告)号：US20210333785A1
公开(公告)日：2021-10-28
申请号：US17367901
申请日：2021-07-06
Applicant: ASML NETHERLANDS B.V.
Inventor： Sarathi ROY , Edo Maria HULSEBOS , Roy WERKMAN , Junru RUAN
IPC: G05B19/418 , G03F7/20 , G05B13/02 , G06N3/04
Abstract: A method for configuring a semiconductor manufacturing process, the method including: obtaining a first value of a first parameter based on measurements associated with a first operation of a process step in the semiconductor manufacturing process and a first sampling scheme; using a recurrent neural network to determine a predicted value of the first parameter based on the first value; and using the predicted value of the first parameter in configuring a subsequent operation of the process step in the semiconductor manufacturing process.
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公开(公告)号：US20190094721A1
公开(公告)日：2019-03-28
申请号：US16132520
申请日：2018-09-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Patricius Aloysius Jacobus TINNEMANS , Edo Maria HULSEBOS , Henricus Johannes Lambertus MEGENS , Sudharshanan RAGHUNATHAN , Boris MENCHTCHIKOV , Ahmet Koray ERDAMAR , Loek Johannes Petrus VERHEES , Willem Seine Christian ROELOFS , Wendy Johanna Martina VAN DE VEN , Hadi YAGUBIZADE , Hakki Ergün CEKLI , Ralph BRINKHOF , Tran Thanh Thuy VU , Maikel Robert GOOSEN , Maaike VAN'T WESTEINDE , Weitian KOU , Manouk RIJPSTRA , Matthijs COX , Franciscus Godefridus Casper BIJNEN
Abstract: A method for determining one or more optimized values of an operational parameter of a sensor system configured to measure a property of a substrate is disclosed. The method includes: determining a quality parameter for a plurality of substrates; determining measurement parameter values for the plurality of substrates using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameter values; and determining the one or more optimized values of the operational parameter based on the comparing.
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公开(公告)号：US20210165399A1
公开(公告)日：2021-06-03
申请号：US17174159
申请日：2021-02-11
Applicant: ASML NETHERLANDS B.V.
Inventor： Sarathi ROY , Edo Maria HULSEBOS , Roy WERKMAN , Junru RUAN
IPC: G05B19/418 , G06N3/04 , G03F7/20 , G05B13/02
Abstract: A method for configuring a semiconductor manufacturing process, the method including: obtaining a first value of a first parameter based on measurements associated with a first operation of a process step in the semiconductor manufacturing process and a first sampling scheme; using a recurrent neural network to determine a predicted value of the first parameter based on the first value; and using the predicted value of the first parameter in configuring a subsequent operation of the process step in the semiconductor manufacturing process.
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公开(公告)号：US20200081356A1
公开(公告)日：2020-03-12
申请号：US16686418
申请日：2019-11-18
Applicant: ASML NETHERLANDS B.V.
Inventor： Patricius Aloysius Jacobus TINNEMANS , Edo Maria HULSEBOS , Henricus Johannes Lambertus MEGENS , Sudharshanan RAGHUNATHAN , Boris MENCHTCHIKOV , Ahmet Koray ERDAMAR , Loek Johannes Petrus VERHEES , Willem Seine Christian ROELOFS , Wendy Johanna Martina VAN DE VEN , Hadi YAGUBIZADE , Hakki Ergün CEKLI , Ralph BRINKHOF , Tran Thanh Thuy VU , Maikel Robert GOOSEN , Maaike VAN'T WESTEINDE , Weitian KOU , Manouk RIJPSTRA , Matthijs COX , Franciscus Godefridus Casper BIJNEN
Abstract: A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate is disclosed the method comprising: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.
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公开(公告)号：US20180356742A1
公开(公告)日：2018-12-13
申请号：US15778517
申请日：2016-10-27
Applicant: ASML NETHERLANDS B.V.
Inventor： Cayetano SANCHEZ-FABRES COBALEDA , Franciscus Godefridus Casper BIJNEN , Edo Maria HULSEBOS , Arie Jeffrey DEN BOEF , Marcel Hendrikus Maria BEEMS , Piotr Michal STOLARZ
Abstract: A lithographic apparatus has a substrate table on which a substrate is positioned, and an alignment sensor used to measure the alignment of the substrate. In an exemplary processing method, the alignment sensor is used to perform one or more edge measurements in a first step. In a second step, one or more edge measurements are performed on the notch of the substrate. The edge measurements are then used to align the substrate in the lithographic apparatus. In a particular example, the substrate is arranged relative to the alignment sensor such that a portion of the edge surface is positioned at the focal length of the lens. When the alignment sensor detects radiation scattered by the edge surface at the focal length of the lens, the presence of the edge of the substrate is detected.
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