公开(公告)号：US20240192610A1

公开(公告)日：2024-06-13

申请号：US18437564

申请日：2024-02-09

Applicant: ASML Netherlands B.V.

Inventor： Gijs TEN HAAF ,  Everhardus Cornelis MOS ,  Hans Erik KATTOUW ,  Ralph BRINKHOF

IPC: G03F7/00

CPC classification number: G03F7/705 ,  G03F7/70633

Abstract: Disclosed is a method for determining a process correction for at least a first process of a lithographic process, comprising at least the first process performed on at least a first substrate using at least a first apparatus and a second process performed on at least said first substrate using at least a second apparatus, where a correction actuation capability of the first apparatus differs from the second apparatus, comprising: obtaining metrology data relating to said first substrate; modeling said metrology data using a first model, the model being related to said first apparatus; and controlling said first process based on the modeled metrology data; the modeling step and/or an additional processing step comprises distributing a penalty in a performance parameter across said first process and said second process such that the distributed penalties in the performance parameter are within their respective specifications of the performance parameter.

公开(公告)号：US20240264537A1

公开(公告)日：2024-08-08

申请号：US18682692

申请日：2022-07-05

Applicant: ASML Netherlands B.V.

Inventor： Gijs TEN HAAF ,  Niels HAVIK ,  Joost ROOZE ,  Vu Quang TRAN

IPC: G03F7/00 ,  G03F9/00 ,  G06F30/398

CPC classification number: G03F7/705 ,  G03F7/70508 ,  G03F7/70633 ,  G03F7/706837 ,  G03F7/706839 ,  G03F9/7046 ,  G06F30/398

Abstract: Disclosed is a method for modeling alignment data over a substrate area relating to a substrate being exposed in a lithographic process. The method comprises obtaining alignment data relating to said substrate and separating the alignment data into systematic component which is relatively stable between different substrates and a non-systematic component which is not relatively stable between different substrates. The systematic component and the non-systematic component are individually modeled and a process correction for the substrate determined based on the modeled systematic component and modeled non-systematic component.

公开(公告)号：US20230393487A1

公开(公告)日：2023-12-07

申请号：US18033028

申请日：2021-11-09

Applicant: ASML NETHERLANDS B.V.

Inventor： Gijs TEN HAAF ,  Shreya ADYANTHAYA

IPC: G03F7/00 ,  G03F9/00 ,  G06F30/20

CPC classification number: G03F7/705 ,  G06F30/20 ,  G03F9/7019

Abstract: A method for modeling measurement data over a substrate area relating to a substrate in a lithographic process. The method includes obtaining measurement data relating to the substrate and performing a combined fitting to fit to the measurement data: at least a first interfield model which describes distortion over the substrate and a field distortion model which describes distortion within an exposure field; wherein either: the at least a first interfield model includes a radial basis function model or an elastic energy minimizing spline model; or the method further includes fitting a radial basis function model or an elastic energy minimizing spline model to a distortion residual of the combined fit of a different interfield model and the field distortion model.