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1.发明申请公开(公告)号：US20180046091A1
公开(公告)日：2018-02-15
申请号：US15791703
申请日：2017-10-24
发明人： Anton Bernhard VAN OOSTEN , Paul Christiaan HINNEN , Robertus Cornelis Martinus DE KRUIF , Robert John SOCHA
CPC分类号： G03F7/70558 , G03F1/44 , G03F7/70516 , G03F7/70525 , G03F7/70625 , G03F7/70641
摘要： Disclosed is a patterning device configured to pattern a beam of radiation according to a desired pattern during a lithographic process. The patterning device comprises first features configured to form a first target on a substrate during the lithographic process and second features configured to form a second target on the substrate during the lithographic process. The second features are taller, in a direction transverse to the plane of the first and second targets, than the first features, such that the first and second targets have a relative best focus offset.
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公开(公告)号：US20160313656A1
公开(公告)日：2016-10-27
申请号：US15104212
申请日：2014-11-20
发明人： Youri Johannes Laurentius Maria VAN DOMMELEN , Peter David ENGBLOM , Lambertus Gerardus Maria KESSELS , Arie Jeffrey DEN BOEF , Kaustuve BHATTACHARYYA , Paul Christiaan HINNEN , Marco Johannes Annemarie PIETERS
IPC分类号： G03F7/20
CPC分类号： G03F7/70641 , G03F7/70683
摘要： A method and apparatus for obtaining focus information relating to a lithographic process. The method includes illuminating a target, the target having alternating first and second structures, wherein the form of the second structures is focus dependent, while the form of the first structures does not have the same focus dependence as that of the second structures, and detecting radiation redirected by the target to obtain for that target an asymmetry measurement representing an overall asymmetry of the target, wherein the asymmetry measurement is indicative of focus of the beam forming the target. An associated mask for forming such a target, and a substrate having such a target.
摘要翻译： 一种用于获得与光刻工艺相关的焦点信息的方法和装置。 该方法包括照亮目标，目标具有交替的第一和第二结构，其中第二结构的形式是聚焦依赖的，而第一结构的形式不具有与第二结构相同的焦点依赖性，并且检测 由目标重定向的辐射以为该目标获得表示目标的总体不对称性的不对称测量，其中不对称测量指示形成目标的波束的焦点。 用于形成这种靶的相关掩模和具有这种靶的基片。
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3.发明申请Method of Determining Focus, Inspection Apparatus, Patterning Device, Substrate and Device Manufacturing Method 有权确定焦点的方法，检查装置，图案化装置，基板和装置的制造方法公开(公告)号：US20150338749A1
公开(公告)日：2015-11-26
申请号：US14410496
申请日：2013-06-03
IPC分类号： G03F7/20
CPC分类号： G03F7/70641 , G03F1/42 , G03F1/44 , G03F7/70625 , G03F7/70683
摘要： A method of determining focus of a lithographic apparatus has the following steps. Using the lithographic process to produce first and second structures on the substrate, the first structure has features which have a profile that has an asymmetry that depends on the focus and an exposure perturbation, such as dose or aberration. The second structure has features which have a profile that is differently sensitive to focus than the first structure and which is differently sensitive to exposure perturbation than the first structure. Scatterometer signals are used to determine a focus value used to produce the first structure. This may be done using the second scatterometer signal, and/or recorded exposure perturbation settings used in the lithographic process, to select a calibration curve for use in determining the focus value using the first scatterometer signal or by using a model with parameters related to the first and second scatterometer signals.
摘要翻译： 确定光刻设备的焦点的方法具有以下步骤。 使用光刻工艺在衬底上产生第一和第二结构，第一结构具有特征，其具有取决于焦点和曝光扰动（例如剂量或像差）的不对称性的轮廓。 第二结构具有这样的特征，其具有与第一结构不同的焦点敏感性，并且与第一结构不同的曝光扰动敏感度。 散射仪信号用于确定用于产生第一结构的聚焦值。 这可以使用第二散射仪信号和/或在光刻处理中使用的记录的曝光扰动设置来完成，以使用第一散射仪信号来选择用于确定聚焦值的校准曲线，或者通过使用具有与 第一和第二散射仪信号。
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公开(公告)号：US20240014078A1
公开(公告)日：2024-01-11
申请号：US18230115
申请日：2023-08-03
发明人： Adriaan Johan VAN LEEST , Anagnostis TSIATMAS , Paul Christiaan HINNEN , Elliott Gerard Mc NAMARA , Alok VERMA , Thomas THEEUWES , Hugo Augustinus Joseph CRAMER
CPC分类号： H01L22/12 , G03F7/70683 , G03F7/70633 , G03F9/7003 , G01N21/9501
摘要： A method of determining a parameter of a patterning process, the method including: obtaining a detected representation of radiation redirected by a structure having geometric symmetry at a nominal physical configuration, wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the structure; and determining, by a hardware computer system, a value of the patterning process parameter based on optical characteristic values from an asymmetric optical characteristic distribution portion of the detected radiation representation with higher weight than another portion of the detected radiation representation, the asymmetric optical characteristic distribution arising from a different physical configuration of the structure than the nominal physical configuration.
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公开(公告)号：US20220082944A1
公开(公告)日：2022-03-17
申请号：US17419689
申请日：2019-12-11
发明人： Samee Ur REHMAN , Anagnostis TSIATMAS , Sergey TARABRIN , Elliott Gerard MC NAMARA , Paul Christiaan HINNEN
摘要： A method to calculate a model of a metrology process including receiving a multitude of SEM measurements of a parameter of a semiconductor process, receiving a multitude of optical measurements of the parameter of a semiconductor process, determining a model of a metrology process wherein the optical measurements of the parameter of semiconductor process are mapped to the SEM measurements of the parameter of the semiconductor process using a regression algorithm.
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公开(公告)号：US20170255112A1
公开(公告)日：2017-09-07
申请号：US15445612
申请日：2017-02-28
发明人： Adriaan Johan VAN LEEST , Anagnostis TSIATMAS , Paul Christiaan HINNEN , Elliott Gerard McNAMARA , Alok VERMA , Thomas THEEUWES , Hugo Augustinus Joseph CRAMER , Maria Isabel DE LA FUENTE VALENTIN , Koen VAN WITTEVEEN , Martijn Maria ZAAL , Shu-jin WANG
摘要： A metrology target includes: a first structure arranged to be created by a first patterning process; and a second structure arranged to be created by a second patterning process, wherein the first structure and/or second structure is not used to create a functional aspect of a device pattern, and wherein the first and second structures together form one or more instances of a unit cell, the unit cell having geometric symmetry at a nominal physical configuration and wherein the unit cell has a feature that causes, at a different physical configuration than the nominal physical configuration due to a relative shift in pattern placement in the first patterning process, the second patterning process and/or another patterning process, an asymmetry in the unit cell.
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7.发明申请Inspection Apparatus, Inspection Method, Lithographic Apparatus and Manufacturing Method 有权检验仪器，检验方法，平版印刷设备及制造方法公开(公告)号：US20170023867A1
公开(公告)日：2017-01-26
申请号：US15214067
申请日：2016-07-19
发明人： Frank STAALS , Carlo Cornelis Maria LUIJTEN , Paul Christiaan HINNEN , Anton Bernhard VAN OOSTEN
CPC分类号： G03F7/70633 , G01B11/02 , G01B11/272 , G01B2210/56 , G03F7/70625 , G03F7/70641
摘要： Disclosed is a method of monitoring a lithographic process parameter, such as focus and/or dose, of a lithographic process. The method comprises acquiring a first and a second target measurement using respectively a first measurement configuration and a second measurement configuration, and determining the lithographic process parameter from a first metric derived from said first target measurement and said second target measurement. The first metric may be difference. Also disclosed are corresponding measurement and lithographic apparatuses, a computer program and a method of manufacturing devices.
摘要翻译： 公开了一种监测光刻工艺参数的方法，例如光刻工艺的焦点和/或剂量。 该方法包括分别采用第一测量配置和第二测量配置获取第一和第二目标测量，以及根据从所述第一目标测量和所述第二目标测量导出的第一度量来确定光刻处理参数。 第一个度量可能是不同的。 还公开了相应的测量和光刻设备，计算机程序和制造设备的方法。
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公开(公告)号：US20140199634A1
公开(公告)日：2014-07-17
申请号：US14213649
申请日：2014-03-14
发明人： Johannes Anna QUAEDACKERS , Paul Christiaan HINNEN , Antonie Gaston Marie KIERS , Christian Marinus LEEWIS
IPC分类号： G03F7/00
CPC分类号： G03F7/0035 , G03F7/70466
摘要： During a multiple patterning process every nth element of the pattern is removed. The removal of the elements of the patterns happens after the pattern has been printed into the radiation sensitive material or etched into substrate. Advantageously, the original mask is not varied, and another exposure step is used to remove the elements of the pattern.
摘要翻译： 在多次图案化处理期间，除去图案的每个第n个元素。 在将图案印刷到辐射敏感材料中或蚀刻到基底中之后，去除图案的元素。 有利地，原始掩模不变，并且使用另一曝光步骤来去除图案的元件。
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公开(公告)号：US20210384086A1
公开(公告)日：2021-12-09
申请号：US17408043
申请日：2021-08-20
发明人： Adriaan Johan VAN LEEST , Anagnostis TSIATMAS , Paul Christiaan HINNEN , Elliott Gerard MC NAMARA , Alok VERMA , Thomas THEEUWES , Hugo Augustinus Joseph CRAMER
摘要： A method of determining overlay of a patterning process, the method including: obtaining a detected representation of radiation redirected by one or more physical instances of a unit cell, wherein the unit cell has geometric symmetry at a nominal value of overlay and wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the one or more physical instances of the unit cell; and determining, from optical characteristic values from the detected radiation representation, a value of a first overlay for the unit cell separately from a second overlay for the unit cell that is also obtainable from the same optical characteristic values, wherein the first overlay is in a different direction than the second overlay or between a different combination of parts of the unit cell than the second overlay.
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10.发明申请公开(公告)号：US20200264522A1
公开(公告)日：2020-08-20
申请号：US16645672
申请日：2018-08-03
发明人： Laurentius Cornelius DE WINTER , Roland Pieter STOLK , Frank STAALS , Anton Bernhard VAN OOSTEN , Paul Christiaan HINNEN , Marinus JOCHEMSEN , Thomas THEEUWES , Eelco VAN SETTEN
摘要： Disclosed is a method of measuring focus performance of a lithographic apparatus, and corresponding patterning device and lithographic apparatus. The method comprises using the lithographic apparatus to print one or more first printed structures and second printed structures. The first printed structures are printed by illumination having a first non-telecentricity and the second printed structures being printed by illumination having a second non-telecentricity, different to said first non-telecentricity. A focus dependent parameter related to a focus-dependent positional shift between the first printed structures and the second printed structures on said substrate is measured and a measurement of focus performance based at least in part on the focus dependent parameter is derived therefrom.
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