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公开(公告)号：US10732498B2
公开(公告)日：2020-08-04
申请号：US16502674
申请日：2019-07-03
Applicant: ASML Netherlands B.V.
Inventor： Pieter Cristiaan De Groot , Gerard Frans Jozef Schasfoort , Maksym Yuriiovych Sladkov , Manfred Petrus Johannes Maria Dikkers , Jozef Maria Finders , Pieter-Jan Van Zwol , Johannes Jacobus Matheus Baselmans , Stefan Michael Bruno Baumer , Laurentius Cornelius De Winter , Wouter Joep Engelen , Marcus Adrianus Van De Kerkhof , Robbert Jan Voogd
Abstract: A patterning device comprising a reflective marker, wherein the marker comprises: a plurality of reflective regions configured to preferentially reflect radiation having a given wavelength; and a plurality of absorbing regions configured to preferentially absorb radiation having the given wavelength; wherein the absorbing and reflective regions are arranged to form a patterned radiation beam reflected from the marker when illuminated with radiation, and wherein the reflective regions comprise a roughened reflective surface, the roughened reflective surface being configured to diffuse radiation reflected from the reflective regions, and wherein the roughened reflective surface has a root mean squared roughness of about an eighth of the given wavelength or more.
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公开(公告)号：US10444635B2
公开(公告)日：2019-10-15
申请号：US16098350
申请日：2017-04-05
Applicant: ASML Netherlands B.V.
Inventor： Carolus Johannes Catharina Schoormans , Johannes Jacobus Matheus Baselmans , Engelbertus Antonius Fransiscus Van Der Pasch , Johannes Aldegonda Theodorus Marie Van Den Homberg , Maksym Yuriiovych Sladkov , Andreas Johannes Antonius Brouns , Alexander Viktorovych Padiy
Abstract: A lithographic method for measuring a position of a target grating with a mask sensor apparatus which comprises a plurality of detector modules each comprising a diffraction grating located at a mask side of a projection system of a lithographic apparatus and an associated detector, the method comprising a first step of measuring first intensities of a combination of diffraction orders diffracted from the target grating while the mask sensor apparatus is moved relatively to the target grating along a first direction; a second step of displacing the mask sensor apparatus relative to the target grating in a second direction, wherein a size of the relative displacement is proportional to a spatial frequency of a potential error; and a third step of measuring second intensities of the combination of diffraction orders diffracted from the target grating while the mask sensor apparatus is moved relatively to the target grating along the first direction.
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公开(公告)号：US10401723B2
公开(公告)日：2019-09-03
申请号：US16300370
申请日：2017-05-30
Applicant: ASML Netherlands B.V.
Inventor： Pieter Cristiaan De Groot , Gerard Frans Jozef Schasfoort , Maksym Yuriiovych Sladkov , Manfred Petrus Johannes Maria Dikkers , Jozef Maria Finders , Pieter-Jan Van Zwol , Johannes Jacobus Matheus Baselmans , Stefan Michael Bruno Baumer , Laurentius Cornelius De Winter , Wouter Joep Engelen , Marcus Adrianus Van De Kerkhof , Robbert Jan Voogd
Abstract: A patterning device comprising a reflective marker, wherein the marker comprises: a plurality of reflective regions configured to preferentially reflect radiation having a given wavelength; and a plurality of absorbing regions configured to preferentially absorb radiation having the given wavelength; wherein the absorbing and reflective regions are arranged to form a patterned radiation beam reflected from the marker when illuminated with radiation, and wherein the reflective regions comprise a roughened reflective surface, the roughened reflective surface being configured to diffuse radiation reflected from the reflective regions, and wherein the roughened reflective surface has a root mean squared roughness of about an eighth of the given wavelength or more.
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