Determining subset of components of an optical characteristic of patterning apparatus

    公开(公告)号:US11561478B2

    公开(公告)日:2023-01-24

    申请号:US17419360

    申请日:2019-12-12

    IPC分类号: G03F7/20

    摘要: A method for determining a component of optical characteristic of a patterning process. The method includes obtaining (i) a plurality of desired features, (ii) a plurality of simulated features based on the plurality of desired features and an optical characteristic of a patterning apparatus, and (iii) a performance metric (e.g., EPE) related to a desired feature of the plurality of desired features and an associated simulated feature of the plurality of simulated features; determining a set of optical sensitivities of the patterning process by computing a change in value of the performance metric based on a change in value of the optical characteristic; and identifying, based on the set of optical sensitivities, a set of components (e.g., principal components) of the optical characteristic that include dominant contributors in changing the value of the performance metric.

    Radiation system
    3.
    发明授权

    公开(公告)号:US11467507B2

    公开(公告)日:2022-10-11

    申请号:US17277554

    申请日:2019-08-28

    摘要: A radiation system comprising a radiation source and a radiation conditioning apparatus, wherein the radiation source is configured to provide a radiation beam with wavelengths which extend from ultraviolet to infrared, and wherein the radiation conditioning apparatus is configured to separate the radiation beam into at least two beam portions and is further configured to condition the at least two beam portions differently.

    Lithographic method and apparatus

    公开(公告)号:US10401735B2

    公开(公告)日:2019-09-03

    申请号:US15778093

    申请日:2016-11-03

    IPC分类号: G03F7/20 G03F1/42 G03F9/00

    摘要: A measurement method comprising using multiple radiation poles to illuminate a diffraction grating on a mask at a mask side of a projection system of a lithographic apparatus, coupling at least two different resulting diffraction orders per illumination pole through the projection system, using the projection system to project the diffraction orders onto a grating on a wafer such that a pair of combination diffraction orders is formed by diffraction of the diffraction orders, coupling the combination diffraction orders back through the projection system to detectors configured to measure the intensity of the combination diffraction orders, and using the measured intensity of the combination diffraction orders to measure the position of the wafer grating.

    Lithographic method and apparatus

    公开(公告)号:US10078272B2

    公开(公告)日:2018-09-18

    申请号:US15527264

    申请日:2015-11-02

    IPC分类号: G03B27/42 G03F7/20

    摘要: A method of correcting aberrations caused by a projection system of a lithographic apparatus, the method including performing a measurement of an aberration caused by the projection system using a sensor located in the lithographic apparatus, determining, based on a history of operation of the lithographic apparatus since a change of machine state, whether to average the measured aberration with one or more aberration measurements previously obtained using the sensor, calculating a correction to be applied to the lithographic apparatus using the measured aberration if it is determined that averaging should not be performed, calculating a correction to be applied to the lithographic apparatus using an averaged aberration measurement if it is determined that averaging should be performed, and applying the calculated correction to the lithographic apparatus.