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公开(公告)号:US11561478B2
公开(公告)日:2023-01-24
申请号:US17419360
申请日:2019-12-12
IPC分类号: G03F7/20
摘要: A method for determining a component of optical characteristic of a patterning process. The method includes obtaining (i) a plurality of desired features, (ii) a plurality of simulated features based on the plurality of desired features and an optical characteristic of a patterning apparatus, and (iii) a performance metric (e.g., EPE) related to a desired feature of the plurality of desired features and an associated simulated feature of the plurality of simulated features; determining a set of optical sensitivities of the patterning process by computing a change in value of the performance metric based on a change in value of the optical characteristic; and identifying, based on the set of optical sensitivities, a set of components (e.g., principal components) of the optical characteristic that include dominant contributors in changing the value of the performance metric.
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公开(公告)号:US11474436B2
公开(公告)日:2022-10-18
申请号:US16973732
申请日:2019-06-11
发明人: Bart Smeets , Anita Bouma , Johannes Jacobus Matheus Baselmans , Birgitt Noelle Cornelia Liduine Hepp , Paulus Hubertus Petrus Koller , Carsten Andreas Köhler
IPC分类号: G03F7/20
摘要: A method for tuning a target apparatus of a patterning process. The method includes obtaining a reference performance, and measurement data of a substrate subjected to the patterning process at the target apparatus, the measurement data indicative of a performance of the target apparatus; determining a cause of a performance mismatch based on a difference between the reference performance and the performance of the target apparatus, wherein the cause includes an optical characteristic; and responsive to the cause, adjusting an optical parameter associated with an adjustable optical characteristic to reduce the performance mismatch in the optical characteristic.
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公开(公告)号:US11467507B2
公开(公告)日:2022-10-11
申请号:US17277554
申请日:2019-08-28
摘要: A radiation system comprising a radiation source and a radiation conditioning apparatus, wherein the radiation source is configured to provide a radiation beam with wavelengths which extend from ultraviolet to infrared, and wherein the radiation conditioning apparatus is configured to separate the radiation beam into at least two beam portions and is further configured to condition the at least two beam portions differently.
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公开(公告)号:US10732498B2
公开(公告)日:2020-08-04
申请号:US16502674
申请日:2019-07-03
发明人: Pieter Cristiaan De Groot , Gerard Frans Jozef Schasfoort , Maksym Yuriiovych Sladkov , Manfred Petrus Johannes Maria Dikkers , Jozef Maria Finders , Pieter-Jan Van Zwol , Johannes Jacobus Matheus Baselmans , Stefan Michael Bruno Baumer , Laurentius Cornelius De Winter , Wouter Joep Engelen , Marcus Adrianus Van De Kerkhof , Robbert Jan Voogd
摘要: A patterning device comprising a reflective marker, wherein the marker comprises: a plurality of reflective regions configured to preferentially reflect radiation having a given wavelength; and a plurality of absorbing regions configured to preferentially absorb radiation having the given wavelength; wherein the absorbing and reflective regions are arranged to form a patterned radiation beam reflected from the marker when illuminated with radiation, and wherein the reflective regions comprise a roughened reflective surface, the roughened reflective surface being configured to diffuse radiation reflected from the reflective regions, and wherein the roughened reflective surface has a root mean squared roughness of about an eighth of the given wavelength or more.
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公开(公告)号:US10451977B2
公开(公告)日:2019-10-22
申请号:US15527254
申请日:2015-11-30
摘要: A method of reducing an aberration of a lithographic apparatus, the method including measuring the aberration, taking the measured aberration into account, estimating a state of the lithographic apparatus, calculating a correction using the estimated state, and applying the correction to the lithographic apparatus.
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公开(公告)号:US10401735B2
公开(公告)日:2019-09-03
申请号:US15778093
申请日:2016-11-03
发明人: Carolus Johannes Catharina Schoormans , Petrus Franciscus Van Gils , Johannes Jacobus Matheus Baselmans
摘要: A measurement method comprising using multiple radiation poles to illuminate a diffraction grating on a mask at a mask side of a projection system of a lithographic apparatus, coupling at least two different resulting diffraction orders per illumination pole through the projection system, using the projection system to project the diffraction orders onto a grating on a wafer such that a pair of combination diffraction orders is formed by diffraction of the diffraction orders, coupling the combination diffraction orders back through the projection system to detectors configured to measure the intensity of the combination diffraction orders, and using the measured intensity of the combination diffraction orders to measure the position of the wafer grating.
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公开(公告)号:US10338478B2
公开(公告)日:2019-07-02
申请号:US14800493
申请日:2015-07-15
发明人: Bob Streefkerk , Johannes Jacobus Matheus Baselmans , Sjoerd Nicolaas Lambertus Donders , Christiaan Alexander Hoogendam , Jeroen Johannes Sophia Maria Mertens , Johannes Catharinus Hubertus Mulkens
摘要: In immersion lithography after exposure of a substrate is complete, a detector is used to detect any residual liquid remaining on the substrate and/or substrate table.
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公开(公告)号:US10078272B2
公开(公告)日:2018-09-18
申请号:US15527264
申请日:2015-11-02
CPC分类号: G03F7/70425 , G03F7/20 , G03F7/70491 , G03F7/706
摘要: A method of correcting aberrations caused by a projection system of a lithographic apparatus, the method including performing a measurement of an aberration caused by the projection system using a sensor located in the lithographic apparatus, determining, based on a history of operation of the lithographic apparatus since a change of machine state, whether to average the measured aberration with one or more aberration measurements previously obtained using the sensor, calculating a correction to be applied to the lithographic apparatus using the measured aberration if it is determined that averaging should not be performed, calculating a correction to be applied to the lithographic apparatus using an averaged aberration measurement if it is determined that averaging should be performed, and applying the calculated correction to the lithographic apparatus.
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公开(公告)号:US10001712B2
公开(公告)日:2018-06-19
申请号:US15328376
申请日:2015-06-26
发明人: Theodorus Wilhelmus Polet , Johannes Jacobus Matheus Baselmans , Willem Jan Bouman , Han Henricus Aldegonda Lempens , Theodorus Marinus Modderman , Cornelius Maria Rops , Bart Smeets , Koen Steffens , Ronald Van Der Ham
CPC分类号: G03F7/70866 , G03F7/70341 , G03F7/7095
摘要: An immersion lithographic apparatus includes a projection system. The projection system is configured to project a patterned radiation beam through an immersion liquid onto a target portion of a substrate. An external surface of the projection system includes a first surface. The first surface has a non-planar shape. An element is attached to the first surface and positioned so that at least a portion of the element contacts the immersion liquid in use. The element includes a closed loop of continuously integral material in a preformed state and conforms to the non-planar shape of the first surface.
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公开(公告)号:US09952515B2
公开(公告)日:2018-04-24
申请号:US14839633
申请日:2015-08-28
发明人: Bob Streefkerk , Johannes Jacobus Matheus Baselmans , Richard Joseph Bruls , Marcel Mathijs Theodore Marie Dierichs , Sjoerd Nicolaas Lambertus Donders , Christiaan Alexander Hoogendam , Hans Jansen , Erik Roelof Loopstra , Jeroen Johannes Sophia Maria Mertens , Johannes Catharinus Hubertus Mulkens , Ronald Walther Jeanne Severijns , Sergei Shulepov , Herman Boom , Timotheus Franciscus Sengers
CPC分类号: G03F7/70341 , G03F7/2041 , G03F7/70908 , G03F7/70958
摘要: An immersion lithographic projection apparatus is disclosed in which liquid is provided between a projection system of the apparatus and a substrate. The use of both liquidphobic and liquidphilic layers on various elements of the apparatus is provided to help prevent formation of bubbles in the liquid and to help reduce residue on the elements after being in contact with the liquid.
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