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公开(公告)号：US10299361B2
公开(公告)日：2019-05-21
申请号：US15469267
申请日：2017-03-24
Applicant: ASML Netherlands B.V.
Inventor： Christoffel Johannes Liebenberg , Robert William Parry
Abstract: An optical pulse for an extreme ultraviolet (EUV) light source may be formed by illuminating a semiconductor material of a modulation system with a first light beam having a first wavelength; applying a voltage to the semiconductor material for a time duration, the applied voltage being sufficient to modify an index of refraction of the semiconductor material such that a polarization state of a light beam having a second wavelength passing through the semiconductor material is modified to pass through at least one polarization-based optical element of the modulation system; and forming an optical pulse by passing a second light beam having the second wavelength through the semiconductor material during the time duration.
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公开(公告)号：US10887975B2
公开(公告)日：2021-01-05
申请号：US16246648
申请日：2019-01-14
Applicant: ASML Netherlands B.V.
Inventor： Christoffel Johannes Liebenberg , Robert William Parry
Abstract: An optical pulse for an extreme ultraviolet (EUV) light source may be formed by illuminating a semiconductor material of a modulation system with a first light beam having a first wavelength; applying a voltage to the semiconductor material for a time duration, the applied voltage being sufficient to modify an index of refraction of the semiconductor material such that a polarization state of a light beam having a second wavelength passing through the semiconductor material is modified to pass through at least one polarization-based optical element of the modulation system; and forming an optical pulse by passing a second light beam having the second wavelength through the semiconductor material during the time duration.
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公开(公告)号：US20190150267A1
公开(公告)日：2019-05-16
申请号：US16246648
申请日：2019-01-14
Applicant: ASML Netherlands B.V.
Inventor： Christoffel Johannes Liebenberg , Robert William Parry
Abstract: An optical pulse for an extreme ultraviolet (EUV) light source may be formed by illuminating a semiconductor material of a modulation system with a first light beam having a first wavelength; applying a voltage to the semiconductor material for a time duration, the applied voltage being sufficient to modify an index of refraction of the semiconductor material such that a polarization state of a light beam having a second wavelength passing through the semiconductor material is modified to pass through at least one polarization-based optical element of the modulation system; and forming an optical pulse by passing a second light beam having the second wavelength through the semiconductor material during the time duration.
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公开(公告)号：US20180279458A1
公开(公告)日：2018-09-27
申请号：US15469267
申请日：2017-03-24
Applicant: ASML Netherlands B.V.
Inventor： Christoffel Johannes Liebenberg , Robert William Parry
CPC classification number: H05G2/008 , G02F1/0126 , G02F1/015 , G02F1/35 , G02F2001/0151 , G02F2202/10 , G03F7/70033 , G03F7/70041 , G03F7/70558 , G03F7/70566 , H01S3/0057 , H01S3/0085 , H01S3/2232
Abstract: An optical pulse for an extreme ultraviolet (EUV) light source may be formed by illuminating a semiconductor material of a modulation system with a first light beam having a first wavelength; applying a voltage to the semiconductor material for a time duration, the applied voltage being sufficient to modify an index of refraction of the semiconductor material such that a polarization state of a light beam having a second wavelength passing through the semiconductor material is modified to pass through at least one polarization-based optical element of the modulation system; and forming an optical pulse by passing a second light beam having the second wavelength through the semiconductor material during the time duration.
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