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公开(公告)号：US09869940B2
公开(公告)日：2018-01-16
申请号：US15133866
申请日：2016-04-20
Applicant: ASML Netherlands B.V.
Inventor： Si-Han Zeng , Yue-Lin Peng , Jen-Yu Fang , Arie Jeffrey Den Boef , Alexander Straaijer , Ching-Yi Hung , Patrick Warnaar
CPC classification number: G03F7/70633 , G01B11/24 , G01B11/272
Abstract: Disclosed are a method, computer program and associated apparatuses for measuring a parameter of a lithographic process. The method comprising the steps of: obtaining first measurements comprising measurements of structural asymmetry relating to a plurality of first structures, each of said plurality of measurements of structural asymmetry corresponding to a different measurement combination of measurement radiation and a value for at least a first parameter; obtaining a plurality of second measurements of target asymmetry relating to a plurality of targets, each of said plurality of measurements of target asymmetry corresponding to one of said different measurement combinations, determining a relationship function describing the relationship between said first measurements and said second measurements, for each of said measurement combinations; determining, from said relationship function, a corrected overlay value, said corrected overlay value being corrected for structural contribution due to structural asymmetry in at least said first structure.
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2.发明申请公开(公告)号：US20160223322A1
公开(公告)日：2016-08-04
申请号：US15013340
申请日：2016-02-02
Applicant: ASML Netherlands B.V.
Inventor： Xing Lan LIU , Hendrik Jan Hidde Smilde , Yue-Lin Peng , Hakki Ergün Cekli , Josselin Pello , Richard Johannes Franciscus Van Haren
CPC classification number: G01B11/272 , G03F7/70616 , G03F7/70625 , G03F7/70633 , G03F9/7007
Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated computer program and apparatuses. The method comprises providing a plurality of target structures on a substrate, each target structure comprising a first structure and a second structure on different layers of the substrate. Each target structure is measured with measurement radiation to obtain a measurement of target asymmetry in the target structure, the target asymmetry comprising an overlay contribution due to misalignment of the first and second structures, and a structural contribution due to structural asymmetry in at least the first structure. A structural asymmetry characteristic relating to the structural asymmetry in at least the first structure of each target structure is obtained, the structural asymmetry characteristic being independent of at least one selected characteristic of the measurement radiation. The measurement of target asymmetry and the structural asymmetry characteristic is then used to determine the overlay contribution of the target asymmetry of each target structure.
Abstract translation: 公开了一种测量光刻处理参数的方法以及相关联的计算机程序和装置。 该方法包括在衬底上提供多个目标结构，每个靶结构包括在衬底的不同层上的第一结构和第二结构。 用测量辐射测量每个目标结构以获得目标结构中的目标不对称性的测量，所述目标不对称性包括由于第一和第二结构的未对准而产生的覆盖贡献，以及由于至少第一个结构中的结构不对称的结构贡献 结构体。 获得与至少每个目标结构的第一结构中的结构不对称有关的结构不对称特性，结构不对称特性与测量辐射的至少一个所选特征无关。 然后使用目标不对称性和结构不对称特征的测量来确定每个目标结构的目标不对称性的覆盖贡献。
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公开(公告)号：US10261427B2
公开(公告)日：2019-04-16
申请号：US15869661
申请日：2018-01-12
Applicant: ASML Netherlands B.V.
Inventor： Si-Han Zeng , Yue-Lin Peng , Jen-Yu Fang , Arie Jeffrey Den Boef , Alexander Straaijer , Ching-Yi Hung , Patrick Warnaar
Abstract: Disclosed are a method, computer program and associated apparatuses for measuring a parameter of a lithographic process. The method comprising the steps of: obtaining first measurements comprising measurements of structural asymmetry relating to a plurality of first structures, each of said plurality of measurements of structural asymmetry corresponding to a different measurement combination of measurement radiation and a value for at least a first parameter; obtaining a plurality of second measurements of target asymmetry relating to a plurality of targets, each of said plurality of measurements of target asymmetry corresponding to one of said different measurement combinations, determining a relationship function describing the relationship between said first measurements and said second measurements, for each of said measurement combinations; determining, from said relationship function, a corrected overlay value, said corrected overlay value being corrected for structural contribution due to structural asymmetry in at least said first structure.
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公开(公告)号：US09879988B2
公开(公告)日：2018-01-30
申请号：US15013340
申请日：2016-02-02
Applicant: ASML Netherlands B.V.
Inventor： Xing Lan Liu , Hendrik Jan Hidde Smilde , Yue-Lin Peng , Hakki Ergün Cekli , Josselin Pello , Richard Johannes Franciscus Van Haren
CPC classification number: G01B11/272 , G03F7/70616 , G03F7/70625 , G03F7/70633 , G03F9/7007
Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated computer program and apparatuses. The method comprises providing a plurality of target structures on a substrate, each target structure comprising a first structure and a second structure on different layers of the substrate. Each target structure is measured with measurement radiation to obtain a measurement of target asymmetry in the target structure, the target asymmetry comprising an overlay contribution due to misalignment of the first and second structures, and a structural contribution due to structural asymmetry in at least the first structure. A structural asymmetry characteristic relating to the structural asymmetry in at least the first structure of each target structure is obtained, the structural asymmetry characteristic being independent of at least one selected characteristic of the measurement radiation. The measurement of target asymmetry and the structural asymmetry characteristic is then used to determine the overlay contribution of the target asymmetry of each target structure.
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