Patent search ap:("ASS ELECT IND") AND inv:"JAMES WAKEFIELD" Page 1

1.

发明授权
Method for producing p-i-n semiconductors 失效
Title translation: 生产p-i-n半导体的方法

公开(公告)号：US3378414A

公开(公告)日：1968-04-16

申请号：US32033863

申请日：1963-10-31

Applicant: ASS ELECT IND

Inventor： VERNON FRECK DAVID , LINDSAY ROUSE ROBERT , JAMES WAKEFIELD

IPC: H01L21/00 , H01L31/117

CPC classification number: H01L31/1175 , H01L21/00

2.

发明授权
Production of p-nu junctions in semiconductor material 失效
Title translation: 生产半导体材料中的p-nu结

公开(公告)号：US3154838A

公开(公告)日：1964-11-03

申请号：US1593460

申请日：1960-03-18

Applicant: ASS ELECT IND

Inventor： RONALD BULLOUGH , CHARLES NEWMAN RONALD , JAMES WAKEFIELD , LINDSAY ROUSE ROBERT , BERNARD WILLIS JOHN

IPC: C30B15/36 , C30B31/02 , H01L21/00 , H01L21/18 , H01L21/208 , H01L21/22 , H01L21/322 , H01L29/06 , H01L29/167 , H01L29/36 , H01L29/73 , H01L29/86

CPC classification number: H01L29/73 , C30B15/36 , C30B31/02 , H01L21/00 , H01L21/18 , H01L21/22 , H01L21/322 , H01L29/06 , H01L29/167 , H01L29/36 , H01L29/86 , Y10S148/003 , Y10S148/033 , Y10S148/049 , Y10S148/051 , Y10S148/115 , Y10S148/122 , Y10S148/151 , Y10S438/922

3.

发明授权
Production of unipolar transistors 失效

公开(公告)号：US3074146A

公开(公告)日：1963-01-22

申请号：US3732560

申请日：1960-06-20

Applicant: ASS ELECT IND

Inventor： CHARLES NEWMAN RONALD , JAMES WAKEFIELD , LINDSAY ROUSE ROBERT

IPC: H01L21/00 , H01L21/306 , H01L29/00

CPC classification number: H01L21/00 , H01L21/30604 , H01L29/00 , Y10S438/914

4.

发明授权
Method of using protective coating over layer of lithium being diffused into substrate 失效
Title translation: 在基底上扩散锂的保护涂层的方法

公开(公告)号：US3212943A

公开(公告)日：1965-10-19

申请号：US22722162

申请日：1962-10-01

Applicant: ASS ELECT IND

Inventor： VERNON FRECK DAVID , JAMES WAKEFIELD

IPC: G01T1/24 , H01L21/00

CPC classification number: H01L21/00

5.

发明授权
Production of p.n. junctions in semiconductor material 失效

公开(公告)号：US3129119A

公开(公告)日：1964-04-14

申请号：US2263760

申请日：1960-04-15

Applicant: ASS ELECT IND

Inventor： LINDSAY ROUSE ROBERT , JAMES WAKEFIELD , BERNARD WILLIS JOHN , RONALD BULLOUGH , CHARLES NEWMAN RONALD

IPC: C30B15/36 , C30B31/02 , H01L21/00 , H01L21/18 , H01L21/208 , H01L21/22 , H01L21/322 , H01L29/06 , H01L29/167 , H01L29/36 , H01L29/73 , H01L29/86

CPC classification number: H01L29/73 , C30B15/36 , C30B31/02 , H01L21/00 , H01L21/18 , H01L21/22 , H01L21/322 , H01L29/06 , H01L29/167 , H01L29/36 , H01L29/86 , Y10S148/003 , Y10S148/033 , Y10S148/049 , Y10S148/051 , Y10S148/115 , Y10S148/122 , Y10S148/151 , Y10S438/922

6.

发明授权
Pair of semiconductor radiation detectors having different atomic numbers and sensitive regions of different thickness 失效
Title translation: 一对具有不同原子序数的半导体辐射探测器和不同厚度的敏感区域

公开(公告)号：US3291992A

公开(公告)日：1966-12-13

申请号：US36239164

申请日：1964-04-24

Applicant: ASS ELECT IND

Inventor： JAMES WAKEFIELD , GEORGE WATERS DEREK , ANTHONY POPE REX

IPC: G01T1/24

CPC classification number: G01T1/24

7.

发明授权
Production of p.n. junctions in semiconductor material 失效
Title translation: 生产p.n. 半导体材料结

公开(公告)号：US3128530A

公开(公告)日：1964-04-14

申请号：US2864460

申请日：1960-05-12

Applicant: ASS ELECT IND

Inventor： LINDSAY ROUSE ROBERT , JAMES WAKEFIELD , CHARLES NEWMAN RONALD

IPC: C30B15/36 , C30B31/02 , H01L21/00 , H01L21/18 , H01L21/208 , H01L21/22 , H01L21/322 , H01L29/06 , H01L29/167 , H01L29/36 , H01L29/73 , H01L29/86

CPC classification number: H01L29/73 , C30B15/36 , C30B31/02 , H01L21/00 , H01L21/18 , H01L21/22 , H01L21/322 , H01L29/06 , H01L29/167 , H01L29/36 , H01L29/86 , Y10S148/003 , Y10S148/033 , Y10S148/049 , Y10S148/051 , Y10S148/115 , Y10S148/122 , Y10S148/151 , Y10S438/922

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