公开(公告)号：US20170200741A1

公开(公告)日：2017-07-13

申请号：US15472280

申请日：2017-03-29

Applicant: Au Optronics Corporation

Inventor： Chu-Hsuan I ,  Yi-Wei Chen

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/124 ,  H01L27/1222 ,  H01L27/3272 ,  H01L29/78621 ,  H01L29/78633 ,  H01L29/78696

Abstract: An active device of a pixel structure includes a semiconductor layer, an insulation layer covering the semiconductor layer, a gate electrode disposed on the insulation layer and electrically connected to a scan line, a protection layer covering the gate electrode, a source electrode and a drain electrode electrically connected to a source region and a drain region of the semiconductor layer. A channel region is disposed between the source region and the drain region. A source lightly doped region is disposed between the channel region and the source region. A drain lightly doped region is disposed between the channel region and the drain region. The light shielding pattern shields the source lightly doped region and the drain lightly doped region. The light shielding pattern is overlapped with one side of the scan line and not overlapped with another side of the scan line.

公开(公告)号：US10379403B2

公开(公告)日：2019-08-13

申请号：US15802017

申请日：2017-11-02

Applicant: AU OPTRONICS CORPORATION

Inventor： Peng-Bo Xi ,  Sung-Yu Su ,  Chu-Hsuan I

IPC: G02F1/1337 ,  G02F1/1362 ,  G02F1/1368 ,  H01L27/12

Abstract: A method for manufacturing a pixel unit includes the following steps. A channel layer is formed. A first pattern layer is formed above the channel layer and includes a scan line and a gate electrode. A second pattern layer is formed above the first pattern layer and includes a data line and a source electrode, where the source electrode is electrically connected to the channel layer. A third pattern layer is formed above the second pattern layer and includes a drain electrode and an auxiliary electrode, where the drain electrode is electrically connected to the channel layer. The auxiliary electrode is electrically connected to the scan line through a first contact hole.

公开(公告)号：US09991289B2

公开(公告)日：2018-06-05

申请号：US15472280

申请日：2017-03-29

Applicant: Au Optronics Corporation

Inventor： Chu-Hsuan I ,  Yi-Wei Chen

IPC: H01L27/32 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

CPC classification number: H01L27/124 ,  H01L27/1222 ,  H01L27/3272 ,  H01L29/78621 ,  H01L29/78633 ,  H01L29/78696

Abstract: An active device of a pixel structure includes a semiconductor layer, an insulation layer covering the semiconductor layer, a gate electrode disposed on the insulation layer and electrically connected to a scan line, a protection layer covering the gate electrode, a source electrode and a drain electrode electrically connected to a source region and a drain region of the semiconductor layer. A channel region is disposed between the source region and the drain region. A source lightly doped region is disposed between the channel region and the source region. A drain lightly doped region is disposed between the channel region and the drain region. The light shielding pattern shields the source lightly doped region and the drain lightly doped region. The light shielding pattern is overlapped with one side of the scan line and not overlapped with another side of the scan line.

公开(公告)号：US09647006B2

公开(公告)日：2017-05-09

申请号：US14985463

申请日：2015-12-31

Applicant: Au Optronics Corporation

Inventor： Chu-Hsuan I ,  Yi-Wei Chen

IPC: H01L27/12 ,  H01L29/78 ,  H01L29/786

CPC classification number: H01L27/124 ,  H01L27/1222 ,  H01L27/3272 ,  H01L29/78621 ,  H01L29/78633 ,  H01L29/78696

Abstract: An active device of a pixel structure includes a semiconductor layer, an insulation layer covering the semiconductor layer, a gate electrode disposed on the insulation layer and electrically connected to a scan line, a protection layer covering the gate electrode, a source electrode and a drain electrode electrically connected to a source region and a drain region of the semiconductor layer. A channel region is disposed between the source region and the drain region. A source lightly doped region is disposed between the channel region and the source region. A drain lightly doped region is disposed between the channel region and the drain region. The light shielding pattern shields the source region, the drain region, the source lightly doped region and the drain lightly doped region. The light shielding pattern is overlapped with one side of the scan line and not overlapped with another side of the scan line.

公开(公告)号：US10276600B2

公开(公告)日：2019-04-30

申请号：US15626306

申请日：2017-06-19

Applicant: AU Optronics Corporation

Inventor： Chu-Hsuan I ,  Yi-Wei Chen

IPC: H01L27/12

Abstract: A pixel structure includes a first insulating layer, a second metal layer, a second insulating layer, and a third metal layer. The second metal layer is disposed on the first insulating layer, and the second metal layer includes at least one first data line, at least one source, and at least one first drain, wherein the first data line is electrically connected to the source. The second insulating layer is disposed on the second metal layer, the second insulating layer includes at least one opening that is disposed corresponding to the first drain, and the area of the opening is greater than the area of the first drain. The third metal layer includes at least one second drain that is electrically connected to the first drain, the second drain is disposed corresponding to the opening and disposed on the first drain.

公开(公告)号：US20180284542A1

公开(公告)日：2018-10-04

申请号：US15802017

申请日：2017-11-02

Applicant: AU OPTRONICS CORPORATION

Inventor： Peng-Bo XI ,  Sung-Yu SU ,  Chu-Hsuan I

IPC: G02F1/1337 ,  G02F1/1362 ,  G02F1/1368 ,  H01L27/12

CPC classification number: G02F1/133707 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133357 ,  G02F2001/136295 ,  H01L27/1244 ,  H01L27/1259

Abstract: A method for manufacturing a pixel unit includes the following steps. A channel layer is formed. A first pattern layer is formed above the channel layer and includes a scan line and a gate electrode. A second pattern layer is formed above the first pattern layer and includes a data line and a source electrode, where the source electrode is electrically connected to the channel layer. A third pattern layer is formed above the second pattern layer and includes a drain electrode and an auxiliary electrode, where the drain electrode is electrically connected to the channel layer. The auxiliary electrode is electrically connected to the scan line through a first contact hole.

公开(公告)号：US20180076224A1

公开(公告)日：2018-03-15

申请号：US15626306

申请日：2017-06-19

Applicant: AU Optronics Corporation

Inventor： Chu-Hsuan I ,  Yi-Wei CHEN

IPC: H01L27/12

CPC classification number: H01L27/124

Abstract: A pixel structure includes a first insulating layer, a second metal layer, a second insulating layer, and a third metal layer. The second metal layer is disposed on the first insulating layer, and the second metal layer includes at least one first data line, at least one source, and at least one first drain, wherein the first data line is electrically connected to the source. The second insulating layer is disposed on the second metal layer, the second insulating layer includes at least one opening that is disposed corresponding to the first drain, and the area of the opening is greater than the area of the first drain. The third metal layer includes at least one second drain that is electrically connected to the first drain, the second drain is disposed corresponding to the opening and disposed on the first drain.

公开(公告)号：US20170025439A1

公开(公告)日：2017-01-26

申请号：US14985463

申请日：2015-12-31

Applicant: Au Optronics Corporation

Inventor： Chu-Hsuan I ,  Yi-Wei Chen

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/124 ,  H01L27/1222 ,  H01L27/3272 ,  H01L29/78621 ,  H01L29/78633 ,  H01L29/78696

Abstract: An active device of a pixel structure includes a semiconductor layer, an insulation layer covering the semiconductor layer, a gate electrode disposed on the insulation layer and electrically connected to a scan line, a protection layer covering the gate electrode, a source electrode and a drain electrode electrically connected to a source region and a drain region of the semiconductor layer. A channel region is disposed between the source region and the drain region. A source lightly doped region is disposed between the channel region and the source region. A drain lightly doped region is disposed between the channel region and the drain region. The light shielding pattern shields the source region, the drain region, the source lightly doped region and the drain lightly doped region. The light shielding pattern is overlapped with one side of the scan line and not overlapped with another side of the scan line.

Abstract translation: 像素结构的有源器件包括半导体层，覆盖半导体层的绝缘层，设置在绝缘层上并电连接到扫描线的栅电极，覆盖栅电极的保护层，源电极和漏极 电极电连接到半导体层的源极区域和漏极区域。 沟道区域设置在源极区域和漏极区域之间。 源极轻掺杂区域设置在沟道区域和源极区域之间。 漏极轻掺杂区域设置在沟道区域和漏极区域之间。 遮光图案屏蔽源极区域，漏极区域，源极轻掺杂区域和漏极轻掺杂区域。 遮光图案与扫描线的一侧重叠，而不与扫描线的另一侧重叠。