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公开(公告)号:US11088347B2
公开(公告)日:2021-08-10
申请号:US16439725
申请日:2019-06-13
Applicant: Au Optronics Corporation
Inventor: Kent-Yi Lee , Wen-Pin Chen , Wen-Tai Chen , Kuo-Jui Chang , Tsu-Wei Chen , Kuo-Kuang Chen , Shih-Hsing Hung
IPC: H01L51/52
Abstract: A light emitting device including a base, a first electrode, a barrier structure layer, a light emitting layer and a second electrode is provided. The barrier structure layer includes a first barrier layer in contact with the first electrode, a second barrier layer and a third barrier layer. The first barrier layer, the second barrier layer and the third barrier layer stack sequentially.
The materials of the first barrier layer and the third barrier layer include a dielectric material. The material of the second barrier layer includes a metal material. A boundary between the third barrier layer and the second barrier layer keeps a vertical distance from the first electrode. The light emitting structure layer is disposed between the first electrode and the second electrode and surrounded by the barrier structure layer. The thickness of the light emitting structure layer is not greater than the vertical distance.-
公开(公告)号:US20200286421A1
公开(公告)日:2020-09-10
申请号:US16744147
申请日:2020-01-15
Applicant: Au Optronics Corporation
Inventor: Bo-Shiang Tzeng , Chia-Ting Hsieh , Pin-Miao Liu , Shih-Hsing Hung
IPC: G09G3/32 , H01L33/62 , H01L25/075
Abstract: A pixel structure includes a data line, a first scan line, first and second transistors, first and second power lines, LED elements, a connection pattern, a first insulation layer, and a first conductive pattern. Each of the first transistor and the second transistor has a first end, a control end, and second end. Each LED element has a first electrode and a second electrode. The second power line is electrically coupled to the first electrodes. The connection pattern is electrically coupled between the second end of the first transistor and the control end of the second transistor. The first conductive pattern is disposed above the first insulation layer and electrically coupled between the second electrodes, the second electrodes are electrically coupled to the second end of the second transistor through the first conductive pattern, and the connection pattern and the first conductive pattern are overlapped in an orthogonal projection direction.
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公开(公告)号:US20150311409A1
公开(公告)日:2015-10-29
申请号:US14472359
申请日:2014-08-28
Applicant: Au Optronics Corporation
Inventor: Chen-Shuo Huang , Chia-Hsun Tu , Cheng-Liang Wang , Shih-Hsing Hung , Meng-Ting Lee
CPC classification number: G02F1/1362 , G02F1/1333
Abstract: A display panel and a display mother board including the display panel are provided. The display panel includes a substrate, a pixel array, at least one driver circuit, an insulating layer, and a metal wall. The substrate includes a display region and a non-display region, and the non-display region has a driver circuit region and an outer region disposed outside of the driver circuit region. The pixel array and the driver circuit are disposed in the display region and the driver circuit region respectively. The insulating layer is disposed on the substrate and in the non-display region. The metal wall is disposed on the insulating layer and in the outer region, wherein a Poisson's ratio of the metal wall is greater than or equal to 0.32.
Abstract translation: 提供了包括显示面板的显示面板和显示母板。 显示面板包括基板,像素阵列,至少一个驱动电路,绝缘层和金属壁。 基板包括显示区域和非显示区域,非显示区域具有设置在驱动电路区域外的驱动电路区域和外部区域。 像素阵列和驱动电路分别设置在显示区域和驱动器电路区域中。 绝缘层设置在基板上和非显示区域中。 金属壁设置在绝缘层上和外部区域中,其中金属壁的泊松比大于或等于0.32。
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公开(公告)号:US20140077340A1
公开(公告)日:2014-03-20
申请号:US13781778
申请日:2013-03-01
Applicant: AU OPTRONICS CORPORATION
Inventor: Cheng-Liang Wang , Shih-Hsing Hung , Keh-Long Hwu
CPC classification number: H01L23/562 , H01L21/02107 , H01L21/0217 , H01L21/02274 , H01L21/48 , H01L51/0097 , H01L2224/32145 , H01L2251/5338 , H01L2924/0002 , H01L2924/12044 , Y02E10/549 , Y02P70/521 , H01L2924/00
Abstract: A fabricating method of a device substrate including the following procedures is provided. First, a substrate is provided and a patterned structure is formed on the substrate, wherein the patterned structure includes a plurality of openings. Then, a protective layer is formed on the patterned structure, wherein the protective layer does not fully fill the openings of the patterned structure such that a gap is existed between the protective layer and the patterned structure. Later, a device layer is formed on the protective layer.
Abstract translation: 提供了包括以下步骤的装置基板的制造方法。 首先,提供基板并且在基板上形成图案化结构,其中图案化结构包括多个开口。 然后,在图案化结构上形成保护层,其中保护层不完全填充图案化结构的开口,使得在保护层和图案化结构之间存在间隙。 之后,在保护层上形成器件层。
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5.
公开(公告)号:US11301740B2
公开(公告)日:2022-04-12
申请号:US17082033
申请日:2020-10-28
Applicant: Au Optronics Corporation
Inventor: Shyh-Bin Kuo , Hsiang-Chi Cheng , Sin-Jie Wang , Yi-Cheng Lai , Chung-Hung Chen , Shih-Hsing Hung
IPC: G06K19/06 , G06K7/08 , G06K19/077 , H05K1/02 , G06K19/07
Abstract: An integrated circuit, a wireless communication card and a wiring structure of an identification mark are provided. The integrated circuit includes a power supply wiring, a ground wiring and at least one identification mark pattern. Each identification mark pattern has a first conductive wiring and a second conductive wiring that overlap each other, wherein the first conductive wiring is electrically connected to the power wiring, and the second conductive wiring is electrically connected to the ground wiring.
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公开(公告)号:US08957505B2
公开(公告)日:2015-02-17
申请号:US13781778
申请日:2013-03-01
Applicant: Au Optronics Corporation
Inventor: Cheng-Liang Wang , Shih-Hsing Hung , Keh-Long Hwu
CPC classification number: H01L23/562 , H01L21/02107 , H01L21/0217 , H01L21/02274 , H01L21/48 , H01L51/0097 , H01L2224/32145 , H01L2251/5338 , H01L2924/0002 , H01L2924/12044 , Y02E10/549 , Y02P70/521 , H01L2924/00
Abstract: A fabricating method of a device substrate including the following procedures is provided. First, a substrate is provided and a patterned structure is formed on the substrate, wherein the patterned structure includes a plurality of openings. Then, a protective layer is formed on the patterned structure, wherein the protective layer does not fully fill the openings of the patterned structure such that a gap is existed between the protective layer and the patterned structure. Later, a device layer is formed on the protective layer.
Abstract translation: 提供了包括以下步骤的装置基板的制造方法。 首先,提供基板并且在基板上形成图案化结构,其中图案化结构包括多个开口。 然后,在图案化结构上形成保护层,其中保护层未完全填充图案化结构的开口,使得在保护层和图案化结构之间存在间隙。 之后,在保护层上形成器件层。
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7.
公开(公告)号:US11687757B2
公开(公告)日:2023-06-27
申请号:US17684395
申请日:2022-03-01
Applicant: Au Optronics Corporation
Inventor: Shyh-Bin Kuo , Hsiang-Chi Cheng , Sin-Jie Wang , Yi-Cheng Lai , Chung-Hung Chen , Shih-Hsing Hung
IPC: G06K19/077 , H05K1/02 , G06K19/07
CPC classification number: G06K19/0772 , G06K19/0701 , H05K1/028 , H05K1/0296 , H05K2201/10098 , H05K2201/10159
Abstract: An integrated circuit, a wireless communication card and a wiring structure of an identification mark are provided. The integrated circuit includes a power supply wiring, a ground wiring and at least one identification mark pattern. Each identification mark pattern has a first conductive wiring and a second conductive wiring that overlap each other, wherein the first conductive wiring is electrically connected to the power wiring, and the second conductive wiring is electrically connected to the ground wiring.
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公开(公告)号:US11087671B2
公开(公告)日:2021-08-10
申请号:US16744147
申请日:2020-01-15
Applicant: Au Optronics Corporation
Inventor: Bo-Shiang Tzeng , Chia-Ting Hsieh , Pin-Miao Liu , Shih-Hsing Hung
IPC: G09G3/32 , H01L25/075 , H01L33/62
Abstract: A pixel structure includes a data line, a first scan line, first and second transistors, first and second power lines, LED elements, a connection pattern, a first insulation layer, and a first conductive pattern. Each of the first transistor and the second transistor has a first end, a control end, and second end. Each LED element has a first electrode and a second electrode. The second power line is electrically coupled to the first electrodes. The connection pattern is electrically coupled between the second end of the first transistor and the control end of the second transistor. The first conductive pattern is disposed above the first insulation layer and electrically coupled between the second electrodes, the second electrodes are electrically coupled to the second end of the second transistor through the first conductive pattern, and the connection pattern and the first conductive pattern are overlapped in an orthogonal projection direction.
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9.
公开(公告)号:US20210182643A1
公开(公告)日:2021-06-17
申请号:US17082033
申请日:2020-10-28
Applicant: Au Optronics Corporation
Inventor: Shyh-Bin Kuo , Hsiang-Chi Cheng , Sin-Jie Wang , Yi-Cheng Lai , Chung-Hung Chen , Shih-Hsing Hung
IPC: G06K19/077 , H05K1/02 , G06K19/07
Abstract: An integrated circuit, a wireless communication card and a wiring structure of an identification mark are provided. The integrated circuit includes a power supply wiring, a ground wiring and at least one identification mark pattern. Each identification mark pattern has a first conductive wiring and a second conductive wiring that overlap each other, wherein the first conductive wiring is electrically connected to the power wiring, and the second conductive wiring is electrically connected to the ground wiring.
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公开(公告)号:US20190393445A1
公开(公告)日:2019-12-26
申请号:US16439725
申请日:2019-06-13
Applicant: Au Optronics Corporation
Inventor: Kent-Yi Lee , Wen-Pin Chen , Wen-Tai Chen , Kuo-Jui Chang , Tsu-Wei Chen , Kuo-Kuang Chen , Shih-Hsing Hung
IPC: H01L51/52
Abstract: A light emitting device including a base, a first electrode, a barrier structure layer, a light emitting layer and a second electrode is provided. The barrier structure layer includes a first barrier layer in contact with the first electrode, a second barrier layer and a third barrier layer. The first barrier layer, the second barrier layer and the third barrier layer stack sequentially.The materials of the first barrier layer and the third barrier layer include a dielectric material. The material of the second barrier layer includes a metal material. A boundary between the third barrier layer and the second barrier layer keeps a vertical distance from the first electrode. The light emitting structure layer is disposed between the first electrode and the second electrode and surrounded by the barrier structure layer. The thickness of the light emitting structure layer is not greater than the vertical distance.
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