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1.
公开(公告)号:US20170294314A1
公开(公告)日:2017-10-12
申请号:US15483448
申请日:2017-04-10
申请人: Aaron Reinicker , Ashwini K. Sinha
发明人: Aaron Reinicker , Ashwini K. Sinha
IPC分类号: H01L21/265 , C23C14/48
CPC分类号: H01L21/265 , C23C14/48 , H01J37/08 , H01J37/3171 , H01J2237/006 , H01J2237/31701
摘要: The present invention relates to an improved composition for ion implantation. A dopant source comprising GeF4 and an assistant species comprising CH3F is provided, wherein the assistant species in combination with the dopant gas can produces a Ge-containing ion beam current. The criteria for selecting the assistant species is based on the combination of the following properties: ionization energy, total ionization cross sections, bond dissociation energy to ionization energy ratio, and a certain composition.
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公开(公告)号:US20200340098A1
公开(公告)日:2020-10-29
申请号:US16871605
申请日:2020-05-11
摘要: A novel method, composition and storage and delivery container for using antimony-containing dopant materials are provided. The composition is selected with sufficient vapor pressure to flow at a steady, sufficient and sustained flow rate into an arc chamber as part of an ion implant process. The antimony-containing material is represented by a non-carbon containing chemical formula, thereby reducing or eliminating the introduction of carbon-based deposits into the ion chamber. The composition is stored in a storage and delivery vessel under stable conditions, which includes a moisture-free environment that does not contain trace amounts of moisture. The storage and delivery container is specifically designed to allow delivery of high purity, vapor phase antimony-containing dopant material at a steady, sufficient and sustained flow rate.
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公开(公告)号:US10597773B2
公开(公告)日:2020-03-24
申请号:US16106197
申请日:2018-08-21
IPC分类号: C23C14/48 , H01J37/08 , H01J37/317 , C23C14/14 , H01J37/32 , H01L21/265
摘要: A novel method, composition and system for using antimony-containing dopant materials are provided. The composition is selected with sufficient vapor pressure to flow into an arc chamber as part of an ion implant process. The antimony-containing material is represented by a non-carbon containing chemical formula, thereby reducing or eliminating the introduction of carbon-based deposits into the ion chamber. The composition is stored in a storage and delivery vessel under stable conditions, which includes a moisture-free environment that does not contain trace amounts of moisture.
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4.
公开(公告)号:US20170294289A1
公开(公告)日:2017-10-12
申请号:US15483479
申请日:2017-04-10
申请人: Aaron Reinicker , Ashwini K Sinha
发明人: Aaron Reinicker , Ashwini K Sinha
IPC分类号: H01J37/317 , C23C14/48 , H01J37/08
CPC分类号: H01L21/265 , C23C14/48 , H01J37/08 , H01J37/3171 , H01J2237/006 , H01J2237/31701
摘要: The present invention relates to an improved composition for ion implantation. A dopant source comprising BF3 and an assistant species comprising Si2H6wherein the assistant species in combination with the dopant gas produces a boron-containing ion beam current. The criteria for selecting the assistant species is based on the combination of the following properties: ionization energy, total ionization cross sections, bond dissociation energy to ionization energy ratio, and a certain composition.
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公开(公告)号:US10711343B2
公开(公告)日:2020-07-14
申请号:US16283027
申请日:2019-02-22
IPC分类号: C23C14/48 , H01J37/08 , H01J37/317 , C23C14/14 , H01J37/32 , H01L21/265
摘要: A novel method, composition and storage and delivery container for using antimony-containing dopant materials are provided. The composition is selected with sufficient vapor pressure to flow at a steady, sufficient and sustained flow rate into an arc chamber as part of an ion implant process. The antimony-containing material is represented by a non-carbon containing chemical formula, thereby reducing or eliminating the introduction of carbon-based deposits into the ion chamber. The composition is stored in a storage and delivery vessel under stable conditions, which includes a moisture-free environment that does not contain trace amounts of moisture. The storage and delivery container is specifically designed to allow delivery of high purity, vapor phase antimony-containing dopant material at a steady, sufficient and sustained flow rate.
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6.
公开(公告)号:US20190144471A1
公开(公告)日:2019-05-16
申请号:US16248952
申请日:2019-01-16
申请人: Aaron Reinicker , Ashwini K. Sinha , Qiong Guo
发明人: Aaron Reinicker , Ashwini K. Sinha , Qiong Guo
IPC分类号: C07F7/22 , H01J37/317 , C23C14/48 , C09D5/24 , H01L21/265
摘要: A novel method and system for using certain tin compounds as dopant sources for ion implantation are provided. A suitable tin-containing dopant source material is selected based on certain attributes. Some of these attributes include stability at room temperature; sufficient vapor pressure to be delivered from its source supply to an ion chamber and, the ability to produce a suitable beam current for ion implantation to achieve the required implant Sn dosage.
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公开(公告)号:US20200013621A1
公开(公告)日:2020-01-09
申请号:US16519180
申请日:2019-07-23
申请人: Aaron Reinicker , Ashwini K Sinha
发明人: Aaron Reinicker , Ashwini K Sinha
IPC分类号: H01L21/265 , C23C14/48 , H01J37/08 , H01J37/317
摘要: The present invention relates to an improved method for increasing a beam current as part of an ion implantation process. The method comprises introducing a dopant source and an assistant species into an ion implanter. A plasma of ions is formed and then extracted from the ion implanter. Non-carbon target ionic species are separated to produce a beam current that is higher in comparison to that generated solely from the dopant source.
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公开(公告)号:US20190185988A1
公开(公告)日:2019-06-20
申请号:US16283027
申请日:2019-02-22
IPC分类号: C23C14/48 , H01J37/317 , H01J37/32 , H01L21/265 , C23C14/14 , H01J37/08
摘要: A novel method, composition and storage and delivery container for using antimony-containing dopant materials are provided. The composition is selected with sufficient vapor pressure to flow at a steady, sufficient and sustained flow rate into an arc chamber as part of an ion implant process. The antimony-containing material is represented by a non-carbon containing chemical formula, thereby reducing or eliminating the introduction of carbon-based deposits into the ion chamber. The composition is stored in a storage and delivery vessel under stable conditions, which includes a moisture-free environment that does not contain trace amounts of moisture. The storage and delivery container is specifically designed to allow delivery of high purity, vapor phase antimony-containing dopant material at a steady, sufficient and sustained flow rate.
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公开(公告)号:US20170292186A1
公开(公告)日:2017-10-12
申请号:US15483522
申请日:2017-04-10
申请人: Aaron Reinicker , Ashwini K Sinha
发明人: Aaron Reinicker , Ashwini K Sinha
IPC分类号: C23C14/48 , H01J37/317
CPC分类号: H01L21/265 , C23C14/48 , H01J37/08 , H01J37/3171 , H01J2237/006 , H01J2237/31701
摘要: The present invention relates to an improved composition for ion implantation. The composition comprises a dopant source and an assistant species wherein the assistant species in combination with the dopant gas produces a beam current of the desired dopant ion. The criteria for selecting the assistant species is based on the combination of the following properties: ionization energy, total ionization cross sections, bond dissociation energy to ionization energy ratio, and a certain composition.
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公开(公告)号:US11098402B2
公开(公告)日:2021-08-24
申请号:US16871605
申请日:2020-05-11
摘要: A novel method, composition and storage and delivery container for using antimony-containing dopant materials are provided. The composition is selected with sufficient vapor pressure to flow at a steady, sufficient and sustained flow rate into an arc chamber as part of an ion implant process. The antimony-containing material is represented by a non-carbon containing chemical formula, thereby reducing or eliminating the introduction of carbon-based deposits into the ion chamber. The composition is stored in a storage and delivery vessel under stable conditions, which includes a moisture-free environment that does not contain trace amounts of moisture. The storage and delivery container is specifically designed to allow delivery of high purity, vapor phase antimony-containing dopant material at a steady, sufficient and sustained flow rate.
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