公开(公告)号：US20030200930A1

公开(公告)日：2003-10-30

申请号：US10133140

申请日：2002-04-26

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Jiong Chen ,  Zhimin Wan

IPC: C23C016/00

CPC classification number: H01J37/3171 ,  H01J2237/0041

Abstract: This invention discloses an ion implantation apparatus that has an ion source and an ion extraction means for extracting an ion beam therefrom. The ion implantation apparatus further includes an ion beam sweeping-and-deflecting means disposed immediately next to the ion extraction means. The ion implantation apparatus further includes a magnetic analyzer for guiding the ion beam passed through the deflecting-and-sweeping means. The mass analyzer is also used for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. The sweeping-and-deflecting means is applied to deflect the ion beam to project through the magnetic mass analyzer and the mass slit for sweeping the ion beam over a surface of the substrate to carry out an ion implantation. In a preferred embodiment, the ion implantation apparatus further includes a plasma electron flood system disposed between the mass slit and the substrate for projecting a plurality of electrons to the ion beam for preventing a space-charge and beam dispersion. In another preferred embodiment, the ion beam extraction and projecting system of this invention further includes a divergent ion-beam extracting optics for extracting an ion beam with a small divergent angle for projecting and diverging the ion beam as the ion beam is projected toward the target surface.

Abstract translation: 本发明公开了一种具有离子源和离子提取装置的离子注入装置，用于从其中提取离子束。 离子注入装置还包括紧邻离子提取装置设置的离子束扫掠和偏转装置。 离子注入装置还包括用于引导穿过偏转扫掠装置的离子束的磁分析器。 质量分析仪还用于选择具有特定质荷比的离子以通过质量狭缝投射到基底上。 施加扫掠和偏转装置以使离子束偏转穿过磁性质量分析器和质量狭缝，以将离子束扫过衬底的表面以进行离子注入。 在优选实施例中，离子注入装置还包括设置在质量狭缝和基板之间的等离子体电子泛滥系统，用于将多个电子投射到离子束以防止空间电荷和光束分散。 在另一个优选实施例中，本发明的离子束提取和投影系统还包括发散离子束提取光学器件，用于当离子束朝向目标投影时以小的发散角提取离子束，用于投射和发散离子束 表面。