公开(公告)号：US20040244692A1

公开(公告)日：2004-12-09

申请号：US10454428

申请日：2003-06-04

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Jiong Chen ,  Simeon K. S. Ma

IPC: C23C016/00

CPC classification number: H01J37/3023 ,  C23C14/48 ,  C23C14/54 ,  H01J37/3171

Abstract: An ion implantation method is disclosed that includes a step of carrying out a built-in early check to ensure accurate and correct operation parameters are employed when the setup operation is started. By applying built-in check processes, the repeatability of ion beam setup processes can be enhanced. The ion beam setup method includes a formula-based searching algorithm to accurately and rapidly determines the atomic mass unit (AMU) using a feedback data other than the beam current. The same formula is used to check for subsystems consistency and reliability to ensure accuracy of the ion beam being set up. The searching algorithm further implements a peaking algorithm to avoid the common pitfalls of misinterpretation of data and achieve an accurate, reliable, and fast tuning with the help of nullTrusty Recipesnull as initial conditions and nullLimits Parametersnull as constraints. In order to enhance and facilitate the human-system interactions, graphic user interface (GUI) is used to minimize human errors and to monitor and to rapidly react to abnormal operation conditions. By reducing the ion beam setup time, it is feasible to shutoff the ion source generation and deflection subsystem during a wafer exchange period. The shutoff operation enables the cost reductions by reducing wastes of materials; manpower and other system resources while increase the overall system productivities.

Abstract translation: 公开了一种离子注入方法，其包括执行内置的早期检查以确保在开始设置操作时采用准确和正确的操作参数的步骤。 通过应用内置的检查过程，可以提高离子束设置过程的重复性。 离子束设置方法包括基于公式的搜索算法，以使用除束电流之外的反馈数据来准确且快速地确定原子质量单位（AMU）。 使用相同的公式来检查子系统的一致性和可靠性，以确保设置离子束的准确性。 搜索算法进一步实现了峰值算法，避免了数据误解的常见缺陷，借助“信任配方”作为初始条件和“限制参数”作为约束，实现了准确，可靠，快速的调优。 为了增强和促进人机系统的相互作用，使用图形用户界面（GUI）来最小化人为错误，并监视和对异常操作条件作出快速反应。 通过减少离子束建立时间，可以在晶片交换期间切断离子源产生和偏转子系统。 关闭操作可以通过减少材料的浪费来降低成本; 人力等系统资源，同时提高整体系统生产力。

公开(公告)号：US20030200930A1

公开(公告)日：2003-10-30

申请号：US10133140

申请日：2002-04-26

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Jiong Chen ,  Zhimin Wan

IPC: C23C016/00

CPC classification number: H01J37/3171 ,  H01J2237/0041

Abstract: This invention discloses an ion implantation apparatus that has an ion source and an ion extraction means for extracting an ion beam therefrom. The ion implantation apparatus further includes an ion beam sweeping-and-deflecting means disposed immediately next to the ion extraction means. The ion implantation apparatus further includes a magnetic analyzer for guiding the ion beam passed through the deflecting-and-sweeping means. The mass analyzer is also used for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. The sweeping-and-deflecting means is applied to deflect the ion beam to project through the magnetic mass analyzer and the mass slit for sweeping the ion beam over a surface of the substrate to carry out an ion implantation. In a preferred embodiment, the ion implantation apparatus further includes a plasma electron flood system disposed between the mass slit and the substrate for projecting a plurality of electrons to the ion beam for preventing a space-charge and beam dispersion. In another preferred embodiment, the ion beam extraction and projecting system of this invention further includes a divergent ion-beam extracting optics for extracting an ion beam with a small divergent angle for projecting and diverging the ion beam as the ion beam is projected toward the target surface.

Abstract translation: 本发明公开了一种具有离子源和离子提取装置的离子注入装置，用于从其中提取离子束。 离子注入装置还包括紧邻离子提取装置设置的离子束扫掠和偏转装置。 离子注入装置还包括用于引导穿过偏转扫掠装置的离子束的磁分析器。 质量分析仪还用于选择具有特定质荷比的离子以通过质量狭缝投射到基底上。 施加扫掠和偏转装置以使离子束偏转穿过磁性质量分析器和质量狭缝，以将离子束扫过衬底的表面以进行离子注入。 在优选实施例中，离子注入装置还包括设置在质量狭缝和基板之间的等离子体电子泛滥系统，用于将多个电子投射到离子束以防止空间电荷和光束分散。 在另一个优选实施例中，本发明的离子束提取和投影系统还包括发散离子束提取光学器件，用于当离子束朝向目标投影时以小的发散角提取离子束，用于投射和发散离子束 表面。