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公开(公告)号:US20250110864A1
公开(公告)日:2025-04-03
申请号:US18478016
申请日:2023-09-29
Applicant: Advanced Micro Devices, Inc.
IPC: G06F12/02 , G06F13/16 , G11C11/4076
Abstract: Enhanced methods for memory context restore are described. A device may include a physical layer (PHY) having an interface to support communication of command signals and data with a physical memory. The PHY implements a training mode to train the interface, detect values of a plurality of parameters as part of training the interface, and store the detected values as initial training data. The PHY also implements a retraining mode to use the initial training data as seed data to retrain the interface.
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公开(公告)号:US20250004662A1
公开(公告)日:2025-01-02
申请号:US18342186
申请日:2023-06-27
Applicant: Advanced Micro Devices, Inc , ATI Technologies ULC
Inventor: David Da Wei Lin , Ronald Lee Pettyjohn , Pouya Najafi Ashtiani , Gershom Birk , Anwar Parvez Kashem
IPC: G06F3/06
Abstract: In accordance with described techniques for read gate training and tracking, a computing device includes a memory system (e.g., dynamic random access memory (DRAM)) that receives a memory read operation which includes a memory clock that correlates to a physical layer (PHY) clock. The computing device includes a PHY that receives a return data signal from the memory system, where the return data signal includes a returned data strobe that is out-of-phase with respect to the PHY clock. The computing device includes training logic that utilizes edge detection to determine an unknown clocking phase of the returned data strobe with respect to the PHY clock. The computing device also includes tracking logic that utilizes the edge detection to detect a signal drift of the delay signal with respect to the returned data strobe and compensate for the drift.
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公开(公告)号:US12265467B1
公开(公告)日:2025-04-01
申请号:US18478016
申请日:2023-09-29
Applicant: Advanced Micro Devices, Inc.
IPC: G06F12/00 , G06F12/02 , G06F13/16 , G11C11/4076
Abstract: Enhanced methods for memory context restore are described. A device may include a physical layer (PHY) having an interface to support communication of command signals and data with a physical memory. The PHY implements a training mode to train the interface, detect values of a plurality of parameters as part of training the interface, and store the detected values as initial training data. The PHY also implements a retraining mode to use the initial training data as seed data to retrain the interface.
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公开(公告)号:US20240371427A1
公开(公告)日:2024-11-07
申请号:US18310872
申请日:2023-05-02
Applicant: Advanced Micro Devices, Inc , ATI Technologies ULC
Inventor: Tsun-Ho Liu , Anwar Parvez Kashem , Pouya Najafi Ashtiani , Wei Qing Xie
IPC: G11C11/406 , G11C11/4074 , G11C11/4093
Abstract: A memory system includes a memory controller, a physical layer (PHY), and a memory (e.g., DRAM). Data is written to and read from the memory in different manners for different memory technologies, such as using different signals or signal timings for different memory technologies. Various runtime services specific to the memory technology are performed by the PHY rather than the memory controller. Examples of such runtime services include performing a training routine to train or re-train an interface between the PHY and the memory, performing a power management routine (e.g., to put the main memory in a self-refresh mode), and so forth.
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公开(公告)号:US20240355379A1
公开(公告)日:2024-10-24
申请号:US18305080
申请日:2023-04-21
Applicant: Advanced Micro Devices, Inc.
IPC: G11C11/4096 , G11C11/4074 , G11C11/4076
CPC classification number: G11C11/4096 , G11C11/4074 , G11C11/4076
Abstract: Voltage range for training physical memory is described. A device is configurable to include a PHY having an interface to support communication of command signals and data with a physical memory. The PHY implements a training mode to train the interface over a training voltage range to communicate the command signals or data and an operational mode to use the trained interface to communicate the command signals or data over an operational voltage range that is smaller than the training voltage range.
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公开(公告)号:US20240329839A1
公开(公告)日:2024-10-03
申请号:US18190724
申请日:2023-03-27
Applicant: Advanced Micro Devices, Inc. , ATI Technologies ULC
Inventor: Tsun-Ho Liu , Anwar Parvez Kashem , Pouya Najafi Ashtiani , Gershom Birk , David Da Wei Lin
CPC classification number: G06F3/0611 , G06F1/08 , G06F3/0656 , G06F3/0673 , H04L7/0016
Abstract: Clock domain phase adjustment techniques and systems for memory operations are described. In one example, a physical memory is communicatively coupled to a physical layer via a first clock domain and a memory controller is communicatively coupled to the physical layer via a second clock domain that is different than the first clock domain. A buffer is implemented in the physical layer. The buffer is configured to set a phase adjustment for a latency setting between the first and second clock domains. The phase adjustment is based on whether a mismatch has occurred in data output by the buffer to the memory controller based on a comparison to the latency setting.
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