公开(公告)号：US20240404897A1

公开(公告)日：2024-12-05

申请号：US18676665

申请日：2024-05-29

Applicant: Advanced Micro Devices, Inc.

Inventor： Deepak Vasant KULKARNI ,  Raja SWAMINATHAN ,  Mihir PANDYA ,  Liwei WANG ,  Samuel NAFFZIGER

IPC: H01L23/13 ,  H01L23/00 ,  H01L23/498 ,  H01L25/18

Abstract: A chip complex is provided that includes at least a first IC die present in a first common tier, a passive interposer, and a plurality of IC dies present in a second common tier. The passive interposer includes an interconnect formed in a back end of the line (BEOL) region. The first IC die present in the first common tier are hybrid bonded to a top side of the passive interposer. The plurality of IC dies present in the second common tier are also hybrid bonded to a bottom side of the passive interposer.