公开(公告)号：US20190096814A1

公开(公告)日：2019-03-28

申请号：US16109272

申请日：2018-08-22

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Sheng-Ming WANG ,  Tien-Szu CHEN ,  Wen-Chih SHEN ,  Hsing-Wen LEE ,  Hsiang-Ming FENG

IPC: H01L23/538 ,  H01L23/31 ,  H01L21/48 ,  H01L23/66 ,  H01L23/367 ,  H01P3/06

Abstract: The present disclosure provides a semiconductor substrate, including a first dielectric layer with a first surface and a second surface, a first conductive via extending between the first surface and the second surface, a first patterned conductive layer on the first surface, and a second patterned conductive layer on the second surface. The first conductive via includes a bottom pattern on the first surface and a second patterned conductive layer on the second surface. The bottom pattern has at least two geometric centers corresponding to at least two geometric patterns, respectively, and a distance between one geometric center and an intersection of the two geometrical patterns is a geometric radius. A distance between the at least two geometric centers is greater than 1.4 times the geometric radius. A method for manufacturing the semiconductor substrate described herein and a semiconductor package structure having the semiconductor substrate are also provided.

公开(公告)号：US20240213168A1

公开(公告)日：2024-06-27

申请号：US18434711

申请日：2024-02-06

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Sheng-Ming WANG ,  Tien-Szu CHEN ,  Wen-Chih SHEN ,  Hsing-Wen LEE ,  Hsiang-Ming FENG

IPC: H01L23/538 ,  H01L21/48 ,  H01L21/683 ,  H01L23/00 ,  H01L23/31 ,  H01L23/367 ,  H01L23/66 ,  H01L25/065 ,  H01P3/06

CPC classification number: H01L23/5386 ,  H01L21/4857 ,  H01L21/6835 ,  H01L23/3107 ,  H01L23/3677 ,  H01L23/5383 ,  H01L23/66 ,  H01P3/06 ,  H01L23/3128 ,  H01L24/16 ,  H01L24/48 ,  H01L25/0657 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2223/6622 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/48225 ,  H01L2224/73253 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2225/06558 ,  H01L2924/15313 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19103 ,  H01L2924/19105

Abstract: The present disclosure provides a semiconductor substrate, including a first dielectric layer with a first surface and a second surface, a first conductive via extending between the first surface and the second surface, a first patterned conductive layer on the first surface, and a second patterned conductive layer on the second surface. The first conductive via includes a bottom pattern on the first surface and a second patterned conductive layer on the second surface. The bottom pattern has at least two geometric centers corresponding to at least two geometric patterns, respectively, and a distance between one geometric center and an intersection of the two geometrical patterns is a geometric radius. A distance between the at least two geometric centers is greater than 1.4 times the geometric radius. A method for manufacturing the semiconductor substrate described herein and a semiconductor package structure having the semiconductor substrate are also provided.

公开(公告)号：US20210091006A1

公开(公告)日：2021-03-25

申请号：US17109111

申请日：2020-12-01

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Sheng-Ming WANG ,  Tien-Szu CHEN ,  Wen-Chih SHEN ,  Hsing-Wen LEE ,  Hsiang-Ming FENG

IPC: H01L23/538 ,  H01L23/31 ,  H01L21/48 ,  H01L23/66 ,  H01L23/367 ,  H01P3/06 ,  H01L21/683

Abstract: The present disclosure provides a semiconductor substrate, including a first dielectric layer with a first surface and a second surface, a first conductive via extending between the first surface and the second surface, a first patterned conductive layer on the first surface, and a second patterned conductive layer on the second surface. The first conductive via includes a bottom pattern on the first surface and a second patterned conductive layer on the second surface. The bottom pattern has at least two geometric centers corresponding to at least two geometric patterns, respectively, and a distance between one geometric center and an intersection of the two geometrical patterns is a geometric radius. A distance between the at least two geometric centers is greater than 1.4 times the geometric radius. A method for manufacturing the semiconductor substrate described herein and a semiconductor package structure having the semiconductor substrate are also provided.